Tool list: Difference between revisions

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== Annealing ==
== Anneal & Furnace ==
{| class="wikitable"
{| class="wikitable sticky-header"
|+
|+
!Tool
!<div style="line-height: 75px;">Tool</div>
!Description
!Location
|-
!Substrate size
|[[RTA]]
!Gases
|Rapid Thermal Annealer
!Features
!Links
|-<div id="RTA (Rapid Thermal Annealer)"></div>
|[[#RTA (Rapid Thermal Annealer)|RTA (Rapid Thermal Annealer)]]
[[File:RTA (rapid thermal annealer).jpg|frameless|314x314px]]
|Deposition bay 1
|Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability
|2%H2 in N2, N2, O2, Ar
|
* Model: Allwin AW-610T
* Programmable, 10°C to 120°C per second.
* ERP Pyrometer 450-1250°C with ±1°C
* Thermocouple 100-800°C with ±0.5°C accuracy & rapid response
* Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer
* Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
|[[:File:RTA standard operation procedures.pdf|SOP]]
|-<div id="Cascade Tek vacuum oven"></div>
|[[#Cascade Tek vacuum oven|Cascade Tek vacuum oven]]
[[File:Cascade tek vacuum oven.jpg|frameless|200x200px]]
|Advanced Photo bay
|
|
|
* Model: Cascade TEK TVO-2
|[[:File:Cascade TEK TVO-2 SOP v1.pdf|SOP]]
|-<div id="Blue M furnace big"></div>
|[[#Blue M furnace big|Blue M furnace big]]
[[File:Blue M oven big.jpg|frameless|177x177px]]
|Advanced Photo bay
|
|
|
* Model: Blue M 0V-12A
* Temp range: up to 260C
|[[:File:Blue M OV-12A Drying Oven SOP v1.pdf|SOP]]
|-<div id="Blue M furnace little"></div>
||[[#Blue M furnace little|Blue M furnace little]]
[[File:Blue M oven little.jpg|frameless|185x185px]]
|Advanced Photo bay
|
|
|
* Model: Blue M 0V-8A
* Temp range: up to 260C
|[[:File:Blue M OV-8A Drying Oven SOP v1.pdf|SOP]]
|-<div id="Narco vacuum oven"></div>
|[[#Narco vacuum oven|Narco vacuum oven]]
[[File:Narco oven.jpg|frameless|174x174px]]
|Advanced Photo bay
|
|
|
* Model: Narco 5831 Vacuum Oven
|
|}
|}


== Deposition ==
== Deposition ==
{| class="wikitable"
{| class="wikitable sticky-header"
|+CVD (chemical vapor deposition)
|+CVD (chemical vapor deposition)
!Tool
!<div style="line-height: 75px;">Tool</div>
!Location
!Location
!Substrate size (up to diameter)
!Substrate size
!Deposition films
!Deposition films
!Gases
!Gases and precursors
!Features
!Features
!Links
!Links
|-
|-<div id="Oxford PECVD"></div>
|[[Oxford PECVD]]
|[[#Oxford PECVD|Oxford PECVD]]
[[File:PECVD.jpg|frameless|200x200px]]
[[File:PECVD.jpg|frameless|200x200px]]
|Deposition bay 1
|Deposition bay 1
|6" wafer
|up to 6" wafer
|SiO2, Si3N4, SiNO
|SiO2, Si3N4, SiNO
|2% SiH4/N2, NH3, N2O, N2, He, CF4
|2% SiH4/N2, NH3, N2O, N2, He, CF4
Line 33: Line 86:
* RF power 300W
* RF power 300W
* LF power 500W
* LF power 500W
|[[:File:DEP-010 Oxford PECVD.pdf|SOP]]
|[[:File:PECVD SOP v1.pdf|SOP]]
|-
|-<div id="Veeco ALD"></div>
|[[Veeco ALD]]
|[[#Veeco ALD|Veeco ALD]]
[[File:ALD.jpg|frameless|212x212px]]
[[File:ALD.jpg|frameless|212x212px]]
|Deposition bay 1
|Deposition bay 1
|4"
|up to 4" diameter or small pieces
|MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|N2 as a carrier gas
|N2 as a carrier gas
H2O as film precursor
O2 or O3 as film precursor
O2 or O3 as film precursor
TMA as Al2O3 precursor
TDMAZr as ZrO2 precursor
MeCpPtMe3 as Pt precursor
TDMAHf as HfO2 precursor
EtCp2Mg as MgO precursor
RuEtCp2 as Ru precursor
TDMAT as TiO2 precursor
|
|
* Savannah S200
* Savannah S200
Line 48: Line 117:
|[[:File:ALD Quick Start Guide - August 2023.pdf|SOP]]
|[[:File:ALD Quick Start Guide - August 2023.pdf|SOP]]
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+PVD (physical vapor deposition)
|+PVD (physical vapor deposition)
!Tool
!<div style="line-height: 75px;">Tool</div>
!Location
!Location
!Substrate size  
!Substrate size
(up to diameter)
!# of pockets
!# of pockets
!E-beam voltage
!Power source
!Deposition materials
!Deposition materials
!Gases
!Gases
!Features
!Features
!Links
!Links
|-
|-<div id="Angstrom Evaporator"></div>
|[[Angstrom Evaporator]]
|[[#Angstrom Evaporator|Angstrom Evaporator]]
[[File:Angstrom Evaporator.jpg|frameless|200x200px]]
[[File:Angstrom Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|Deposition bay 1
|6"
|up to 6"
|4
|4 pockets
|10kV
|E-beam voltage 10kV
|Ti, Al, Al2O3
|Ti, Al, Al2O3
|Ar, 5% O2 in Ar
|Ar, 5% O2 in Ar
Line 76: Line 144:
* load lock
* load lock
|[[:File:Angstrom Evaporator SOP v1.pdf|SOP]]
|[[:File:Angstrom Evaporator SOP v1.pdf|SOP]]
|-
|-<div id="CHA Evaporator"></div>
|[[CHA Evaporator]]
|[[#CHA Evaporator|CHA Evaporator]]
[[File:CHA Evaporator.jpg|frameless|195x195px]]
[[File:CHA Evaporator.jpg|frameless|195x195px]]
|Deposition bay 2
|Deposition bay 2
|6"
|up to 6"
|6 @ 15cc
|6 pockets @ 15cc
|10kV
|E-beam voltage 10kV
|Ti, Au, Pt, Pd, Cr, Ni and Ag
|Ti, Au, Pt, Pd, Cr, Ni and Ag
|
|
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* substrate dome for twenty-two 100mm back loaded wafers
* substrate dome for twenty-two 100mm back loaded wafers
* Inficon IC/6 for thickness control
* Inficon IC/6 for thickness control
|[[:File:CHA Evaporator SOP v1.pdf|SOP]]
|[[:File:CHA Evaporator SOP v2.pdf|SOP]]
|-
|-<div id="KJL Evaporator"></div>
|[[KJL Evaporator]]
|[[#KJL Evaporator|KJL Evaporator]]
[[File:KJL Evaporator.jpg|frameless|200x200px]]
[[File:KJL Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|Deposition bay 1
|6"
|up to 6"
|4
|4 pockets
|5kV
|E-beam voltage 5kV
|Ti, Au, Pt, Pd, Cr, Ni and Ag
|Ti, Au, Pt, Pd, Cr, Ni, and Ag. Other materials available upon request.
|
|
|
|
Line 108: Line 176:
|
|
* [[:File:KJL Metal SOP v1.pdf|SOP]]
* [[:File:KJL Metal SOP v1.pdf|SOP]]
* [[:File:KJL Ebeam.mp4|how-to video]]
* [https://drive.google.com/file/d/1YhiAI7t0Oj1NVDgHsnbHGBm0qvsl0yjb/view?usp=sharing Training video]
|-
|-<div id="Temescal Metal e-beam evaporator"></div>
|[[Temescal Metal]] e-beam evaporator
|[[#Temescal Metal e-beam evaporator|Temescal Metal e-beam evaporator]]
|
|Deposition bay 1
|
|
|
|
Line 118: Line 186:
|
|
|Not in service.  
|Not in service.  
|
|[[:File:DEP-015 Temescal Ebeam Metal Evaporator 04-28-09.pdf|SOP]]
|-
|- <div id="KJL Sputter"></div>
|
|[[#KJL Sputter|KJL Sputter]]
!
!Substrate size
!# of sources
!Sputter power
|
|
|
|
|-
|[[KJL Sputter]]
[[File:KJL Sputter.jpg|frameless|200x200px]]
[[File:KJL Sputter.jpg|frameless|200x200px]]
|Deposition bay 1
|Deposition bay 1
|6"
|up to 6"
|
|
* 4 DC
* 4 DC sources
* 1 RF/DC
* 1 RF/DC source
|
|
* DC sputter power 500 W
* DC sputter power 500 W
* RF sputter power 300 W
* RF sputter power 300 W
|Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO
|Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, and ITO. Other materials available upon request.
|Ar, O2
|Ar, O2
|
|
Line 146: Line 204:
* Substrate rotation
* Substrate rotation
|[[:File:KJL Sputter SOP v2.pdf|SOP]]
|[[:File:KJL Sputter SOP v2.pdf|SOP]]
|}
== Dry Etching & Plasma Cleaning ==
<big>'''See also: [[Dry etching recipes|Dry etching recipes.]]'''</big>
{{sticky header}}
{| class="wikitable sticky-header"
|+Etchers
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate
size
!Allowed
materials
!Disallowed
materials
!Gases
!Table temperature
!Features
!Links
|-<div id="Oxford DRIE"></div>
|[[#Oxford DRIE|Oxford DRIE]]
[[File:DRIE.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB
|No exposed metals (except Cr as a mask)
|Ar, O2, CF4, CHF3, SF6, C4F8
|20C
|
* Model: Oxford System 100 Deep reactive-ion etcher
* Etch deep Si with Bosch process
* ICP power (max) 3000W
* Table RF power (max) 300W
|
* [[:File:DRIE SOP - August 2023.pdf|SOP]]
* [[:File:DRIE Quick Start Guide - August 2023.pdf|Quickstart guide]]
* [https://drive.google.com/file/d/1m-eROS6U5DX9oX8whYGcevRShoGtdpAr/view?usp=drive_link Load lock operation video with chamber open]
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vRAOAaR5tTHyx3b0pJpRsf3p0oh_AjsmcLllQjLOq_5Uod0HPC2WB94mBHw6brxLaQqFUvY6Iu3jJ20/pubhtml?gid=0&single=true Recipes]
|-<div id="Oxford DRIE-ALE"></div>
|[[#Oxford DRIE-ALE|Oxford DRIE-ALE]]
[[File:DRIE-ALE.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Si only - other materials may be allowed on a case by case basis
|No SiNx, SiO2, III-V materials
No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
|BCl3, Cl2, H2, N2O, CH4, CF4, CHF3, Ar, O2, C4F8, SF6
| -120 to 200C
|
* Oxford Deep reactive-ion etcher and atomic-layer etcher.
|
|- <div id="Oxford III-V"></div>
|[[#Oxford III-V|Oxford III-V]]
[[File:III-V.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene
|No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
|Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4
| -120 to 200C
|
* Model: Oxford PlasmaPro 100 Cobra III-V etcher
* Etch III-V materials
* Cryo cooling
* Helium backside cooling
* ICP power (max) 1500W
* Table RF power (max) 1500W
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
|
* [[:File:III V Etcher SOP - August 2023.pdf|SOP]]
* [[:File:III V Quick Start Guide - August 2023.pdf|Quickstart guide]]
|-<div id="Oxford RIE"></div>
|[[#Oxford RIE|Oxford RIE]]
[[File:RIE.jpg|frameless|200x200px]]
|Etch bay 1
|Up to 200 mm wafers
|Si, SiO2, Si3N4
As masks: Cr, graphene
Material removal: passivation (fluorine), resist (for descum), surface cleaning and activation
|No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
No deep or high-aspect-ratio processes (consult staff)
|Ar, O2, CF4, CHF3, SF6
|20C
|
* Model: Oxford PlasmaPro 80 reactive ion etcher
* Etch dielectrics
* Table RF power (max) 300W
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
|
* [[:File:OXFDRIE80 SOP Updated 2026.pdf|SOP]]
* [[:File:OES SOP apr 2026.pdf|OES SOP]]
* [[:File:Laser Endpoint SOP apr 2026.pdf|Laser Endpoint SOP]]
* [https://drive.google.com/file/d/15cHZNcl4yK-OBauSIQ__ZOWv5xrtNU40/view?usp=sharing Training video]
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vQq4XcefR151mYBgklqcWF9FOO8aEkGMUIhjG4EBruVm8xm6_LGaJOBhc3icg2DIVvD4bUZ4wXFI1G_/pubhtml?gid=873136343&single=true Standard Recipes]
* [Https://docs.google.com/spreadsheets/d/1cleuEcpL6Nnjj40jUlnfaEt4aXEZ23ReL1UCT6eQsUY/edit?gid=864539770#gid=864539770 Standard Recipe Calibration]
|- <div id="XeF2 etcher"></div>
|[[#XeF2 etcher|XeF2 etcher]]
[[File:XeF2.jpg|frameless|200x200px]]
|Deposition bay 1
|Up to 6" wafers
|Si
|None
|Crystal XeF2 source
|20C
|
* Etch Si quickly and isotropically with high selectivity
* Custom built by the Armani group
|
* [[:File:XeF2 SOP - June 2023.pdf|SOP]]
* [[:File:XeF2 Quick Start Guide - May 2023.pdf|Quickstart guide]]
|}
{| class="wikitable sticky-header"
|+Plasma cleaning / ashing
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Allowed materials
!Gases
!Features
!Links
|-<div id="Tegal O2 Plasma Asher"></div>
|[[#Tegal O2 Plasma Asher|Tegal O2 Plasma Asher]]
[[File:Tegal o2 plasma.jpg|frameless|163x163px]]
|Advanced Photo Bay
|200 mm pieces or wafers
|Photoresist, graphene, CNT
|O2
|
* Model: Tegal CU90??
|[[:File:Tegal Oxygen Plasma Asher.pdf|SOP]]
|-<div id="Tegal Plasma"></div>
|[[#Tegal Plasma|Tegal Plasma]]
[[File:Tegal plasma cleaner.jpg|frameless|178x178px]]
|Advanced Photo Bay
|
|
|
|
* Model: Tegal Plasma 915
* Tool is currently not in operation
|
|-<div id="YES O2 Plasma"></div>
|[[#YES O2 Plasma|YES O2 Plasma]]
[[File:Yes o2 plasma.jpg|frameless|238x238px]]
|Advanced Photo Bay
|200mm pieces or wafers
|
|O2
|
* Model: Yield Engineering System YES-CV200RFS
* 1000W table RF power
* Heat up to 250C
|[[:File:YES Quick Start Guide - August 2023.pdf|Quickstart]]
|}
|}


== Lithography ==
== Lithography ==
{| class="wikitable"
{| class="wikitable sticky-header"
|+E-beam and laser
|+E-beam and laser
!Tool
!<div style="line-height: 75px;">Tool</div>
!Location
!Location
!Substrate size
!Substrate size
Line 158: Line 377:
!Features
!Features
!Links
!Links
|-
|-<div id="Raith EBL"></div>
|[[Raith EBL]]
|[[#Raith EBL|Raith EBL]]
[[File:Raith EBPG5150.jpg|frameless|200x200px]]
[[File:Raith EBPG5150.jpg|frameless|200x200px]]
|Ebeam Bay
|Ebeam Bay
Line 170: Line 389:
* Pattern Generator 125 MHZ Genlsys – Beamer
* Pattern Generator 125 MHZ Genlsys – Beamer
|[[:File:Raith EBPG 5150 SOP.pdf|SOP]]
|[[:File:Raith EBPG 5150 SOP.pdf|SOP]]
|-
|-<div id="Heidelberg DWL"></div>
|[[Heidelberg DWL]]
|[[#Heidelberg DWL|Heidelberg DWL]]
[[File:Heidelberg DWL 66+.jpg|frameless|200x200px]]
[[File:Heidelberg DWL 66+.jpg|frameless|200x200px]]
|Metrology Bay
|Metrology Bay
Line 189: Line 408:
|[[:File:Heidelberg DWL 66 plus SOP.pdf|SOP]]
|[[:File:Heidelberg DWL 66 plus SOP.pdf|SOP]]
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+UV mask aligners
|+UV mask aligners
!Tool
!<div style="line-height: 75px;">Tool</div>
!Location
!Location
!Substrate
!Substrate
Line 201: Line 420:
!Features
!Features
!Links
!Links
|-
|-<div id="Aligner A (MJB3)"></div>
|[[Aligners A and B (MJB3)|Aligner A (MJB3)]]
|[[#Aligner A (MJB3)|Aligner A (MJB3)]]
[[File:MJB3 A.jpg|frameless|200x200px]]
[[File:MJB3 A.jpg|frameless|200x200px]]
|Advanced Photo bay
|Advanced Photo bay
Line 214: Line 433:
* Exposure source 350 W Hg Arc lamp
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-
|-<div id="Aligner B (MJB3)"></div>
|[[Aligners A and B (MJB3)|Aligner B (MJB3)]]
|[[#Aligner B (MJB3)|Aligner B (MJB3)]]
[[File:MJB3 B.jpg|frameless|200x200px]]
[[File:MJB3 B.jpg|frameless|200x200px]]
|Photo bay
|Photo bay
Line 226: Line 445:
* Exposure source 350 W Hg Arc lamp
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-
|-<div id="Aligner C (MJB4)"></div>
|[[Aligner C (MJB4)]]
|[[#Aligner C (MJB4)|Aligner C (MJB4)]]
[[File:MJB4 C.jpg|frameless|150x150px]]
[[File:MJB4 C.jpg|frameless|150x150px]]
|Photo bay
|Photo bay
Line 237: Line 456:
* Eyepieces 10x, objectives 5x, 10x, 20x
* Eyepieces 10x, objectives 5x, 10x, 20x
|[[:File:Mask Aligner MJB4 SOP.pdf|SOP]]
|[[:File:Mask Aligner MJB4 SOP.pdf|SOP]]
|-
|-<div id="Aligner D (MA BA6 Gen4)"></div>
|[[Aligner D (MA BA6 Gen4)]]
|[[#Aligner D (MA BA6 Gen4)|Aligner D (MA BA6 Gen4)]]
[[File:MABA6 D.jpg|frameless|200x200px]]
[[File:MABA6 D.jpg|frameless|200x200px]]
|Advanced Photo Bay
|Advanced Photo Bay
Line 252: Line 471:
|}
|}


== Dry Etching ==
== Metrology ==
{| class="wikitable sticky-header"
|+Assorted metrology
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="4-point Probe"></div>
|[[#4-point Probe|4-point Probe]]
[[File:4 point probe.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Signatone 4-point probe
* SP4 probe
* Readout with HP 34401A multimeter
|
* [[:File:Hp34401 multimeter for 4ptprobe manual.pdf|Multimeter SOP]]
|-<div id="Dektak profilometer"></div>
|[[#Dektak profilometer|Dektak profilometer]]
[[File:Dektak.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Bruker DektakXT profilometer
* Scan Length Range 55mm (2in)
* 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum
* Max. Sample Thickness 50mm (1.95in)
* Step Height Repeatability <5Å, 1sigma on 0.1μm step
* Vertical Range 1mm (0.039in.)
* Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm;
* 150 Å @ 1mm 3D capability
|[[:File:Dektak XT SOP.pdf|SOP]]
|-<div id="Ellipsometer"></div>
|[[#Ellipsometer|Ellipsometer]]
[[File:Ellipsometer.jpg|frameless|200x200px]]
|Photo bay
|
* Thin film thickness measurement
* Laser wavelengths 4050, 6328, 8300 Angstroms
* Wafer mapping Yes
|[[SOP:Ellipsometer|SOP]]
|-<div id="Filmetrics F10"></div>
|[[Tool list#Filmetrics F10|Filmetrics F10]]
[[File:Filmetrics F20.jpg|frameless|233x233px]]
|Photo bay
|Thin film thickness measurement
|[[Filmetrics F10 Standard Operating Procedure|SOP]]
|}
{| class="wikitable sticky-header"
|+Microscopes
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="Desktop SEM"></div>
|[[#Desktop SEM|Desktop SEM]]
[[File:Phenom SEM.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Phenom ProX G6 Desktop Scanning Electron Microscope
* Acc Voltage 5 – 15kV
* Resolution <10nm (for BSED)
* Magnification 80-150,000x
* Electron or optical imaging modes
* Sample Size – up to 32mm
|
* [[:File:Phenom SEM operation procedures.pdf|Operation manual]]
|-<div id="Nikon LV 150 optical microscope"></div>
|[[#Nikon LV 150 optical microscope|Nikon LV 150 optical microscope]]
[[File:Nikon LV 150 microscope.jpg|frameless|200x200px]]
|Photo bay
|
* Brightfield & Darkfield Polarizer/Analyzer
* Halogen Lamp 5x, 10x, 20x, 50x, 100x
* Camera – 5.9 MP resolution
* USB output/WIFI for exporting images
|[[:File:Nikon Eclipse LV150N Microscope SOP v1.pdf|SOP]]
|-<div id="Max ERB optical microscope"></div>
|[[#Max ERB optical microscope|Max ERB optical microscope]]
[[File:Max ERB microscope.jpg|frameless|186x186px]]
|Photo bay
|
* Zeiss 47 30 12 9902 binocular microscope head
* MSA-001 linear encoder
|
|-<div id="Zeiss optical microscope"></div>
|[[#Zeiss optical microscope|Zeiss optical microscope]]
[[File:Zeiss microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
|
|-<div id="Nikon SMZ-10A optical microscope"></div>
|[[#Nikon SMZ-10A optical microscope|Nikon SMZ-10A optical microscope]]
[[File:Nikon smz-10a microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
* Dyna Lite 150 light source
* Olympus UC30 camera
|
|-<div id="Nikon optical microscope"></div>
|[[#Nikon optical microscope|Nikon optical microscope]]
[[File:Unknown Nikon optical microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
* Dyna Lite 150 light source
|
|}


 
== Packaging & Mechanical Tooling ==
See also: [[Dry etch equipment comparison]].
{| class="wikitable sticky-header"
{| class="wikitable"
|+Wafer and die processing
|+Etchers
!<div style="line-height: 75px;">Tool</div>
!Tool
!Location
!Location
!Substrate
!Substrate size
size
!Allowed
materials
!Disallowed
materials
!Gases
!Table temperature
!Features
!Features
!Links
!Links
|-
|-<div id="Ball & Wedge bonder"></div>
|[[Oxford DRIE]]
|[[#Ball & Wedge bonder|Ball & Wedge bonder]]
[[File:DRIE.jpg|frameless|200x200px]]
[[File:Fs bondtec wire bonder.jpg|frameless|200x200px]]
|Etch bay 1
|Etch bay 2
|4" wafer clamp, smaller pieces may go onto carrier wafers
|
2″, 3″, 4″, 6″, 8″ wafers possible
|
|Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB
* Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
|No exposed metals (except Cr)
|
|Ar, O2, CF4, CHF3, SF6, C4F8
* [[:File:SOP-Wire-Bonder.pdf|SOP]]
|20C
* [[:File:Wire bonder 53XXBDA en-manual.pdf|Operation manual]]
|-<div id="Dicing Saw"></div>
|[[#Dicing Saw|Dicing Saw]]
[[File:Dicing saw.jpg|frameless|200x200px]]
|Common chase
|up to 10" or 250x250 mm
|
* Model: DISCO Corp. DAD3350 Dicing Saw
* 1.8 kW spindle
* X-axis Cutting range 260 mm
* Cutting speed mm/s 0.1 ～ 600
* Y-axis Cutting range 260 mm
* Index step: 0.0001 mm Z-axis
* Max. stroke: 32.2 mm
* Moving resolution: 0.00005 mm
* Repeatability accuracy: 0.001 mm
|
* [[:File:Disco Dicing Saw SOP v3.pdf|SOP]]
* [[:File:Dicing Saw Manual.pdf|Operation manual]]
* [https://drive.google.com/file/d/1yX8D712iCx9p6fb6fpUrM641zMq_xhoh/view?usp=sharing Training video part 1]
* [https://drive.google.com/file/d/1d6mJyI4XWhKVxlKeKhPMkS9pXmzbGAkv/view?usp=sharing Training video part 2]
* [https://drive.google.com/file/d/1SOrdsiE0oh6ZT0NZ7HBQ9P030tDoDxnm/view?usp=sharing Training video part 3]
|-<div id="Mini Polisher"></div>
|[[#Mini Polisher|Mini Polisher]]
[[File:Mini polisher with parts installed.jpg|frameless|200x200px]]
|Common chase
|up to 1" diameter
|
|
* Model: Oxford System 100 Deep reactive-ion etcher
* EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
* ICP power (max) 3000W
* 20nm, 50nm, 0.25um, 1um, 5um, 10um polishing slurries/pastes available
* Table RF power (max) 300W
* Smooth polishing pads and sanding pads from 60-3000 grit available
|
|
* [[:File:DRIE SOP - August 2023.pdf|SOP]]
* [[SOP:Mini Polisher|SOP]]
* [[:File:DRIE Quick Start Guide - August 2023.pdf|Quickstart guide]]
* [https://mtixtl.com/products/unipol-300 Manufacturer product page, including operation videos]
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vRAOAaR5tTHyx3b0pJpRsf3p0oh_AjsmcLllQjLOq_5Uod0HPC2WB94mBHw6brxLaQqFUvY6Iu3jJ20/pubhtml?gid=0&single=true Recipes]
|-<div id="LatticeAx Cleaver"></div>
|-
|[[#LatticeAx Cleaver|LatticeAx Cleaver]]
|[[Oxford DRIE-ALE]]
[[File:Latticeax cleaver.jpg|frameless|156x156px]]
|Etch bay 1
|Photo bay
|
|
|
|
* LatticeAx 420 Cleaving System
* 2-axis linear stage
* Digital camera
|
|
* [[:File:LatticeAx 420 SOP v1.pdf|SOP]]
* [https://drive.google.com/file/d/1141aO-N5KNwdH-JWKg3Zsqe0k6bCeVLz/view?usp=drive_link Operation video]
* [[:File:LatticeAx 420 Manual.pdf|Operation manual]]
|-<div id="FlipScribe Cleaver"></div>
|[[#FlipScribe Cleaver|FlipScribe Cleaver]]
[[File:Flipscribe cleaver.jpg|frameless|208x208px]]
|Photo bay
|
|
|
|
|Oxford Deep reactive-ion etcher and atomic-layer etcher.
* Model: LatticeGear FlipScribe
|
|
|-
* [[:File:FlipScribe Manual.pdf|Operation manual]]
|[[Oxford III-V]]
* [[:File:FlipScribe Quick Guide.pdf|Quickstart]]
[[File:III-V.jpg|frameless|200x200px]]
|-<div id="Vacuum Bag Sealer"></div>
|Etch bay 1
|[[#Vacuum Bag Sealer|Vacuum Bag Sealer]]
|4" wafer clamp, smaller pieces may go onto carrier wafers
[[File:Gramatech vacuum bag sealer.jpg|frameless|209x209px]]
2″, 3″, 4″, 6″, 8″ wafers possible
|Advanced photo bay
|InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene
|No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4
| -120 to 200C
|
|
* Model: Oxford PlasmaPro 100 Cobra III-V etcher
* Cryo cooling
* Helium backside cooling
* ICP power (max) 1500W
* Table RF power (max) 1500W
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
|
|
* [[:File:III V Etcher SOP - August 2023.pdf|SOP]]
* Model: Gramatech GVS2600R Vacuum Sealer
* [[:File:III V Quick Start Guide - August 2023.pdf|Quickstart guide]]
* 36" max sealing width
|-
* N2 purge bags before sealing
|[[Oxford RIE]]
* Foot lever operation
[[File:RIE.jpg|frameless|200x200px]]
* Automated purge/vacuum/heat-seal/cool sequence
|Etch bay 1
|Up to 200 mm wafers
|Si, SiO2, Si3N4
|No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|Ar, O2, CF4, CHF3, SF6
|20C
|
|
* Model: Oxford PlasmaPro 80 reactive ion etcher
|}
* Table RF power (max) 300W
 
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
== PCB Processing ==
{| class="wikitable sticky-header"
|+PCB processing
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="LPKF PCB mill"></div>
|[[#LPKF PCB mill|LPKF PCB mill]]
[[File:LPKF ProtoMat S103 PCB mill.jpg|frameless|200x200px]]
|Common chase
|
|
* [[:File:RIE 80 SOP - August 2023.pdf|SOP]]
* Model: LPKF ProtoMat S103
* [[:File:RIE 80 Quick Start Guide - August 2023.pdf|Quickstart guide]]
* PCB milling, through hole drilling, contour routing, solder dispensing
|-
* CircuitPro software available for design work
|[[XeF2 etcher]]
* Accepts design file Gerber export from various CAD softwares
[[File:XeF2.jpg|frameless|200x200px]]
* Mechanical resolution 0.5um
|Deposition bay 1
* Max PCB size: A4
|Up to 6" wafers
|Si
|None
|Crystal XeF2 source
|20C
|
|
* Custom built by the Armani group
* [[LPKF Standard Operating Procedure|SOP]]
* [[:File:2406-protomat-s43-serie-manual-.pdf|Operation manual]]
|-<div id="LPKF electroplater"></div>
|[[#LPKF electroplater|LPKF electroplater]]
[[File:LPKF Contac S4 electroplater.jpg|frameless|200x200px]]
|Common chase
|
|
* [[:File:XeF2 SOP - June 2023.pdf|SOP]]
* Model: LPKF Contac S4
* [[:File:XeF2 Quick Start Guide - May 2023.pdf|Quickstart guide]]
* Multistep clean and plate process
* Through-hole copper electroplating
* Not yet in use. [[Contact Nanofab Staff|Contact Nanofab staff]] if interested and we can procure the chemical set.
|[[:File:3940-manual-contac-s4-v3-0-en.pdf|Operation manual]]
|}
|}
{| class="wikitable"
 
|+Plasma cleaning / ashing
== Wet Process ==
{| class="wikitable sticky-header"
|+Solvent fume hood (located in Metrology bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|[[O2 Plasma Asher]]
| rowspan="4" |[[File:Fume hood solvent.jpg|frameless|500x500px]]
Model: Air Control, Inc CS-41-316LSS-8ft
|Heated ultrasonic bath
|
|
| rowspan="4" |[[:File:Solvent Fumehoods SOP v1.pdf|SOP]]
|-
|-
|[[Tegal Plasma]]
|Torrey Pines hot plate
|Tegal 915 Plasma Strip
|Model: Torrey Pines HS70
|-
|-
|[[YES O2 Plasma]]
|Solvent drains
|YES Engineering O2 Plasma
|
|-
|N2 sprayers
|
|}
|}
 
{| class="wikitable sticky-header"
== Metrology ==
|+Acid fume hood left-side (located in Etch bay)
{| class="wikitable"
!
|+
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|[[4Pt Probe|4-point Probe]]
|This fume hood is the only fume hood where the Piranha and Nanostrip chemicals may be used.
|Signatone 4-point probe
|
|
|
|-
|-
|[[Dektak]]
| rowspan="4" |[[File:Fume hood acid left.jpg|frameless|500x500px]]
|Bruker DektakXT profilometer
Model: Air Control, Inc. CS-41-C-PVC-7ft
|Heated bath
|Model: Imtec Accubath
| rowspan="4" |[[:File:Etch Bay Fumehoods SOP v1.pdf|SOP]]
|-
|-
|[[Desktop SEM]]
|Quick-dump-rinse tank (QDR)
|Phenom ProX G6 Desktop Scanning Electron Microscope
|
|-
|-
|[[Ellipsometer]]
|DI water tap
|Thin film thickness measurement
|
|-
|-
|[[F20]]
|N2 gun
|Thin film thickness measurement
|
|-
|[[Keithley S530]]
|Keithley (Tektronix) S530 Parametric tester
|}
|}
 
{| class="wikitable sticky-header"
== Oxidation ==
|+Acid fume hood right-side (located in Etch bay)
{| class="wikitable"
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|[[Oxide (lower)]]
|Piranha and Nanostrip chemicals are NOT allowed in this fume hood.
|
|
|
|-
|[[Oxide (upper)]]
|
|
|}
== Packaging & Mechanical Tooling ==
{| class="wikitable"
!Tool
!Description
|-
|-
|[[Ball & Wedge bonder]]
| rowspan="6" |[[File:Fume hood acid right.jpg|frameless|500x500px]]
|F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Model: Air Control, Inc. CS-41-C-PVC-7ft
|Heated bath
|Model: Imtec Accubath
| rowspan="6" |[[:File:Etch Bay Fumehoods SOP v1.pdf|SOP]]
|-
|-
|[[Dicing Saw]]
|Torrey Pines hot plate left
|DISCO Corp. DAD3350 Dicing Saw
| rowspan="2" |Model: Torrey Pines HS70
|-
|-
|[[Mini Polisher]]
|Torrey Pines hot plate right
|EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
|-
|-
|[[Scribe Tool]]
|Quick-dump-rinse tank (QDR)
|LatticeAx 420 Cleaving System
|
|-
|-
|[[Vacuum Sealer]]
|DI water tap
|Gramatech GVS2600R Vacuum Sealer
|}
 
== Wet Process ==
{| class="wikitable"
|+Solvent fume hood (in Metrology bay)
!Tool
!Description
|-
|Heated ultrasonic bath
|
|
|-
|-
|Hot plate
|N2 sprayer
|
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+Acid fume hood left-side (in Etch bay)
|+Resist fume hood (located in Advanced Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
| rowspan="8" |[[File:Fume hood resist.jpg|frameless|400x400px]]
Model: Air Control, Inc. CS-41-316-LSS-8ft
|Spinner left
| rowspan="2" |Laurell resist spinner
| rowspan="2" |[[:File:Laurell Spinner SOP v1.pdf|SOP]]
|-
|Spinner right
|-
|Bake plate 1
| rowspan="4" |Apogee bake plate
| rowspan="4" |[[:File:Apogee Hotplate SOP v1.pdf|SOP]]
|-
|-
|Bake plate 2
|-
|Bake plate 3
|-
|Bake plate 4
|-
|N2 sprayer left
|
|
|
|
|}
{| class="wikitable"
|+Acid fume hood right-side (in Etch bay)
!Tool
!Description
|-
|-
|N2 sprayer right
|
|
|
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+Resist fume hood
|+Base and developer fume hood left-side (located in Advanced Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|Spinner 1
| rowspan="6" |[[File:Fume hood development left.jpg|frameless|500x500px]]
|Laurell resist spinner (left side)
Model: Air Control, Inc. CS-41-C-PVC-6ft
|Heated bath
|Model: Imtec Accubath
| rowspan="5" |[[:File:Advanced Photobay Fumehoods SOP v1.pdf|SOP]]
|-
|-
|Spinner 2
|Torrey Pines hot plate
|Laurell resist spinner (right side)
|Model: Torrey Pines HS70
|-
|-
|Bake plate 1
|Quick-dump-rinse tank (QDR)
|Apogee bake plate
|
|-
|-
|Bake plate 2
|DI water tap
|Apogee bake plate
|
|-
|-
|Bake plate 3
|DI water gun
|Apogee bake plate
|
|-
|-
|Bake plate 4
|N2 sprayer
|Apogee bake plate
|
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+Base and developer fume hood left-side (in Advanced Photo bay)
|+Base and developer fume hood right-side (located in Advanced Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
| rowspan="6" |[[File:Fume hood development right.jpg|frameless|500x500px]]
Model: Air Control, Inc. CS-41-C-PVC-6ft
|Heated bath
|Model: Imtec Accubath
| rowspan="6" |[[:File:Advanced Photobay Fumehoods SOP v1.pdf|SOP]]
|-
|Torrey Pines hot plate
|Model: Torrey Pines HS70
|-
|Quick-dump-rinse tank (QDR)
|
|
|-
|DI water tap
|
|
|}
{| class="wikitable"
|+Base and developer fume hood right-side (in Advanced Photo bay)
!Tool
!Description
|-
|-
|DI water gun
|
|
|-
|N2 sprayer
|
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+EBL-use-only fume hood (in Photo bay)
|+E-beam resist fume hood (located in Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
| rowspan="8" |[[File:Fume hood ebeam resist.jpg|frameless|500x500px]]
Model: Precision Air Technology CS-41-316LSS-8ft
|Headway spinner left
|Headway spinner left
|Headway resist spinner
| rowspan="2" |
* Model: Headway Research CB15
* Controller model: Headway Research PWM50
| rowspan="2" |[[:File:Headway Spinner SOP v1.pdf|SOP]]
|-
|-
|Headway spinner right
|Headway spinner right
|Headway resist spinner
|-
|-
|Torrey Pines Hot Plate left
|Apogee hot plate left
|
|
| rowspan="2" |[[:File:Apogee Hotplate SOP v1.pdf|SOP]]
|-
|-
|Torrey Pines Hot Plate right
|Apogee hot plate right
|
|
|-
|-
|Ultrasonic heated bath
|Ultrasonic heated bath
|
|
|-
|Torrey Pines hot plate/ stirrer
|Model: Torrey Pines HS70
|
|-
|N2 gun left
|
|
|-
|N2 gun right
|
|
|
|}
|}

Latest revision as of 10:04, 11 May 2026

Anneal & Furnace

Tool
 Location Substrate size Gases Features Links
RTA (Rapid Thermal Annealer)

Deposition bay 1 Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability 2%H2 in N2, N2, O2, Ar
  • Model: Allwin AW-610T
  • Programmable, 10°C to 120°C per second.
  • ERP Pyrometer 450-1250°C with ±1°C
  • Thermocouple 100-800°C with ±0.5°C accuracy & rapid response
  • Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer
  • Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
 SOP
Cascade Tek vacuum oven

Advanced Photo bay
  • Model: Cascade TEK TVO-2
 SOP
Blue M furnace big

Advanced Photo bay
  • Model: Blue M 0V-12A
  • Temp range: up to 260C
 SOP
Blue M furnace little

Advanced Photo bay
  • Model: Blue M 0V-8A
  • Temp range: up to 260C
 SOP
Narco vacuum oven

Advanced Photo bay
  • Model: Narco 5831 Vacuum Oven

Deposition

CVD (chemical vapor deposition)
Tool
 Location Substrate size Deposition films Gases and precursors Features Links
Oxford PECVD

Deposition bay 1 up to 6" wafer SiO2, Si3N4, SiNO 2% SiH4/N2, NH3, N2O, N2, He, CF4
  • PlasmaPro System 100
  • Electrode specs: 240mm diameter, up to 400°C
  • Load lock
  • No wafer clamping, fixed height
  • RF power 300W
  • LF power 500W
 SOP
Veeco ALD

Deposition bay 1 up to 4" diameter or small pieces MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2 N2 as a carrier gas

H2O as film precursor

O2 or O3 as film precursor

TMA as Al2O3 precursor

TDMAZr as ZrO2 precursor

MeCpPtMe3 as Pt precursor

TDMAHf as HfO2 precursor

EtCp2Mg as MgO precursor

RuEtCp2 as Ru precursor

TDMAT as TiO2 precursor

  • Savannah S200
  • Reactor temperature: 150°C for most recipes, up to 270°C
  • Ozone generator can replace O2 with O3
 SOP
PVD (physical vapor deposition)
Tool
 Location Substrate size # of pockets Power source Deposition materials Gases Features Links
Angstrom Evaporator

Deposition bay 1 up to 6" 4 pockets E-beam voltage 10kV Ti, Al, Al2O3 Ar, 5% O2 in Ar
  • variable angle stage
  • substrate rotation
  • substrate heater
  • ion mill for substrate cleaning
  • load lock
 SOP
CHA Evaporator

Deposition bay 2 up to 6" 6 pockets @ 15cc E-beam voltage 10kV Ti, Au, Pt, Pd, Cr, Ni and Ag
  • Sweep controller
  • motor-driven deposition shield
  • 8kW heater array
  • Lift-off fixturing
  • substrate rotation
  • substrate dome for twenty-two 100mm back loaded wafers
  • Inficon IC/6 for thickness control
 SOP
KJL Evaporator

Deposition bay 1 up to 6" 4 pockets E-beam voltage 5kV Ti, Au, Pt, Pd, Cr, Ni, and Ag. Other materials available upon request.
  • substrate rotation
  • source to substrate distance is approx. 15″ (381mm)
Temescal Metal e-beam evaporator Deposition bay 1 Not in service. SOP
KJL Sputter

Deposition bay 1 up to 6"
  • 4 DC sources
  • 1 RF/DC source
  • DC sputter power 500 W
  • RF sputter power 300 W
 Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, and ITO. Other materials available upon request. Ar, O2
  • Target size: 2"
  • Substrate rotation
 SOP

Dry Etching & Plasma Cleaning

See also: Dry etching recipes.

Etchers
Tool
 Location Substrate

size

Allowed

materials

Disallowed

materials

Gases Table temperature Features Links
Oxford DRIE

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB No exposed metals (except Cr as a mask) Ar, O2, CF4, CHF3, SF6, C4F8 20C
  • Model: Oxford System 100 Deep reactive-ion etcher
  • Etch deep Si with Bosch process
  • ICP power (max) 3000W
  • Table RF power (max) 300W
Oxford DRIE-ALE

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

Si only - other materials may be allowed on a case by case basis No SiNx, SiO2, III-V materials

No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

BCl3, Cl2, H2, N2O, CH4, CF4, CHF3, Ar, O2, C4F8, SF6 -120 to 200C
  • Oxford Deep reactive-ion etcher and atomic-layer etcher.
Oxford III-V

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4 -120 to 200C
  • Model: Oxford PlasmaPro 100 Cobra III-V etcher
  • Etch III-V materials
  • Cryo cooling
  • Helium backside cooling
  • ICP power (max) 1500W
  • Table RF power (max) 1500W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
Oxford RIE

Etch bay 1 Up to 200 mm wafers Si, SiO2, Si3N4

As masks: Cr, graphene Material removal: passivation (fluorine), resist (for descum), surface cleaning and activation

No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

No deep or high-aspect-ratio processes (consult staff)

Ar, O2, CF4, CHF3, SF6 20C
  • Model: Oxford PlasmaPro 80 reactive ion etcher
  • Etch dielectrics
  • Table RF power (max) 300W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
XeF2 etcher

Deposition bay 1 Up to 6" wafers Si None Crystal XeF2 source 20C
  • Etch Si quickly and isotropically with high selectivity
  • Custom built by the Armani group
Plasma cleaning / ashing
Tool
 Location Substrate size Allowed materials Gases Features Links
Tegal O2 Plasma Asher

Advanced Photo Bay 200 mm pieces or wafers Photoresist, graphene, CNT O2
  • Model: Tegal CU90??
 SOP
Tegal Plasma

Advanced Photo Bay
  • Model: Tegal Plasma 915
  • Tool is currently not in operation
YES O2 Plasma

Advanced Photo Bay 200mm pieces or wafers O2
  • Model: Yield Engineering System YES-CV200RFS
  • 1000W table RF power
  • Heat up to 250C
 Quickstart

Lithography

E-beam and laser
Tool
 Location Substrate size Exposure

resolution

Features Links
Raith EBL

Ebeam Bay 4" wafer, or small pieces up to 2" <8nm
  • Model: EBPG5150
  • Thermal Field Emission 50kV and 100kV
  • Beam current 350nA
  • Pattern Generator 125 MHZ Genlsys – Beamer
 SOP
Heidelberg DWL

Metrology Bay
  • Min substrate/mask size 5x5mm
  • Max substrate/mask size 9"x9"
 300nm
  • Model: Heidelberg DWL 66+ (Direct Write Laser)
  • Front and backside alignment
  • Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
  • Write modes (trading off high speed and high resolution)
    • High resolution (min feature size 0.3um)
    • Mode IV: min size 2um
    • Mode V: min size 4um
  • Alignment modes: Manual, semi-automatic, and fully automatic alignment
 SOP
UV mask aligners
Tool
 Location Substrate

size

Mask

size

Exposure

resolution

Features Links
Aligner A (MJB3)

Advanced Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Backside alignment
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner B (MJB3)

Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner C (MJB4)

Photo bay Pieces up to 2" 3", 4", and 5" 0.8um
  • Exposure wavelength UV 400, 350 – 450nm
  • Eyepieces 10x, objectives 5x, 10x, 20x
 SOP
Aligner D (MA BA6 Gen4)

Advanced Photo Bay 0.8um
  • Backside alignment
  • Exposure wavelength UV400 350 – 450 nm
  • Exposure source 450W LED
  • Digital camera objectives 5x, 10x
 SOP

Metrology

Assorted metrology
Tool
 Location Features Links
4-point Probe

Metrology bay
  • Model: Signatone 4-point probe
  • SP4 probe
  • Readout with HP 34401A multimeter
Dektak profilometer

Metrology bay
  • Model: Bruker DektakXT profilometer
  • Scan Length Range 55mm (2in)
  • 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum
  • Max. Sample Thickness 50mm (1.95in)
  • Step Height Repeatability <5Å, 1sigma on 0.1μm step
  • Vertical Range 1mm (0.039in.)
  • Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm;
  • 150 Å @ 1mm 3D capability
 SOP
Ellipsometer

Photo bay
  • Thin film thickness measurement
  • Laser wavelengths 4050, 6328, 8300 Angstroms
  • Wafer mapping Yes
 SOP
Filmetrics F10

Photo bay Thin film thickness measurement SOP
Microscopes
Tool
 Location Features Links
Desktop SEM

Metrology bay
  • Model: Phenom ProX G6 Desktop Scanning Electron Microscope
  • Acc Voltage 5 – 15kV
  • Resolution <10nm (for BSED)
  • Magnification 80-150,000x
  • Electron or optical imaging modes
  • Sample Size – up to 32mm
Nikon LV 150 optical microscope

Photo bay
  • Brightfield & Darkfield Polarizer/Analyzer
  • Halogen Lamp 5x, 10x, 20x, 50x, 100x
  • Camera – 5.9 MP resolution
  • USB output/WIFI for exporting images
 SOP
Max ERB optical microscope

Photo bay
  • Zeiss 47 30 12 9902 binocular microscope head
  • MSA-001 linear encoder
Zeiss optical microscope

Advanced photo bay
Nikon SMZ-10A optical microscope

Advanced photo bay
  • Dyna Lite 150 light source
  • Olympus UC30 camera
Nikon optical microscope

Advanced photo bay
  • Dyna Lite 150 light source

Packaging & Mechanical Tooling

Wafer and die processing
Tool
 Location Substrate size Features Links
Ball & Wedge bonder

Etch bay 2
  • Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw

Common chase up to 10" or 250x250 mm
  • Model: DISCO Corp. DAD3350 Dicing Saw
  • 1.8 kW spindle
  • X-axis Cutting range 260 mm
  • Cutting speed mm/s 0.1 ～ 600
  • Y-axis Cutting range 260 mm
  • Index step: 0.0001 mm Z-axis
  • Max. stroke: 32.2 mm
  • Moving resolution: 0.00005 mm
  • Repeatability accuracy: 0.001 mm
Mini Polisher

Common chase up to 1" diameter
  • EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
  • 20nm, 50nm, 0.25um, 1um, 5um, 10um polishing slurries/pastes available
  • Smooth polishing pads and sanding pads from 60-3000 grit available
LatticeAx Cleaver

Photo bay
  • LatticeAx 420 Cleaving System
  • 2-axis linear stage
  • Digital camera
FlipScribe Cleaver

Photo bay
  • Model: LatticeGear FlipScribe
Vacuum Bag Sealer

Advanced photo bay
  • Model: Gramatech GVS2600R Vacuum Sealer
  • 36" max sealing width
  • N2 purge bags before sealing
  • Foot lever operation
  • Automated purge/vacuum/heat-seal/cool sequence

PCB Processing

PCB processing
Tool
 Location Features Links
LPKF PCB mill

Common chase
  • Model: LPKF ProtoMat S103
  • PCB milling, through hole drilling, contour routing, solder dispensing
  • CircuitPro software available for design work
  • Accepts design file Gerber export from various CAD softwares
  • Mechanical resolution 0.5um
  • Max PCB size: A4
LPKF electroplater

Common chase
  • Model: LPKF Contac S4
  • Multistep clean and plate process
  • Through-hole copper electroplating
  • Not yet in use. Contact Nanofab staff if interested and we can procure the chemical set.
 Operation manual

Wet Process

Solvent fume hood (located in Metrology bay)
Tool Description Links

Model: Air Control, Inc CS-41-316LSS-8ft

Heated ultrasonic bath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Solvent drains
N2 sprayers
Acid fume hood left-side (located in Etch bay)
Tool Description Links
This fume hood is the only fume hood where the Piranha and Nanostrip chemicals may be used.

Model: Air Control, Inc. CS-41-C-PVC-7ft

Heated bath Model: Imtec Accubath SOP
Quick-dump-rinse tank (QDR)
DI water tap
N2 gun
Acid fume hood right-side (located in Etch bay)
Tool Description Links
Piranha and Nanostrip chemicals are NOT allowed in this fume hood.

Model: Air Control, Inc. CS-41-C-PVC-7ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate left Model: Torrey Pines HS70
Torrey Pines hot plate right
Quick-dump-rinse tank (QDR)
DI water tap
N2 sprayer
Resist fume hood (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-316-LSS-8ft

Spinner left Laurell resist spinner SOP
Spinner right
Bake plate 1 Apogee bake plate SOP
Bake plate 2
Bake plate 3
Bake plate 4
N2 sprayer left
N2 sprayer right
Base and developer fume hood left-side (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-C-PVC-6ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
DI water gun
N2 sprayer
Base and developer fume hood right-side (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-C-PVC-6ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
DI water gun
N2 sprayer
E-beam resist fume hood (located in Photo bay)
Tool Description Links

Model: Precision Air Technology CS-41-316LSS-8ft

Headway spinner left
  • Model: Headway Research CB15
  • Controller model: Headway Research PWM50
 SOP
Headway spinner right
Apogee hot plate left SOP
Apogee hot plate right
Ultrasonic heated bath
Torrey Pines hot plate/ stirrer Model: Torrey Pines HS70
N2 gun left
N2 gun right
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