Tool list: Difference between revisions

From USC Nanofab Wiki
Jump to navigation Jump to search
J (talk | contribs)
Bureaucrats, Interface administrators, Suppressors, Administrators
587 edits
VisualWikitext
add some tools
 
→Dry Etching & Plasma Cleaning: add materials to allow/disallowlists for RIE80
 
(122 intermediate revisions by 2 users not shown)
Line 1: Line 1:
== Annealing ==
== Anneal & Furnace ==
{| class="wikitable"
{| class="wikitable sticky-header"
|+
|+
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Gases
!Features
!Links
|-<div id="RTA (Rapid Thermal Annealer)"></div>
|[[#RTA (Rapid Thermal Annealer)|RTA (Rapid Thermal Annealer)]]
[[File:RTA (rapid thermal annealer).jpg|frameless|314x314px]]
|Deposition bay 1
|Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability
|2%H2 in N2, N2, O2, Ar
|
* Model: Allwin AW-610T
* Programmable, 10°C to 120°C per second.
* ERP Pyrometer 450-1250°C with ±1°C
* Thermocouple 100-800°C with ±0.5°C accuracy & rapid response
* Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer
* Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
|[[:File:RTA standard operation procedures.pdf|SOP]]
|-<div id="Cascade Tek vacuum oven"></div>
|[[#Cascade Tek vacuum oven|Cascade Tek vacuum oven]]
[[File:Cascade tek vacuum oven.jpg|frameless|200x200px]]
|Advanced Photo bay
|
|
|
* Model: Cascade TEK TVO-2
|[[:File:Cascade TEK TVO-2 SOP v1.pdf|SOP]]
|-<div id="Blue M furnace big"></div>
|[[#Blue M furnace big|Blue M furnace big]]
[[File:Blue M oven big.jpg|frameless|177x177px]]
|Advanced Photo bay
|
|
|
* Model: Blue M 0V-12A
* Temp range: up to 260C
|[[:File:Blue M OV-12A Drying Oven SOP v1.pdf|SOP]]
|-<div id="Blue M furnace little"></div>
||[[#Blue M furnace little|Blue M furnace little]]
[[File:Blue M oven little.jpg|frameless|185x185px]]
|Advanced Photo bay
|
|
|
* Model: Blue M 0V-8A
* Temp range: up to 260C
|[[:File:Blue M OV-8A Drying Oven SOP v1.pdf|SOP]]
|-<div id="Narco vacuum oven"></div>
|[[#Narco vacuum oven|Narco vacuum oven]]
[[File:Narco oven.jpg|frameless|174x174px]]
|Advanced Photo bay
|
|
|
* Model: Narco 5831 Vacuum Oven
|
|}
== Deposition ==
{| class="wikitable sticky-header"
|+CVD (chemical vapor deposition)
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Deposition films
!Gases
!Features
!Links
|-<div id="Oxford PECVD"></div>
|[[#Oxford PECVD|Oxford PECVD]]
[[File:PECVD.jpg|frameless|200x200px]]
|Deposition bay 1
|up to 6" wafer
|SiO2, Si3N4, SiNO
|2% SiH4/N2, NH3, N2O, N2, He, CF4
|
* PlasmaPro System 100
* Electrode specs: 240mm diameter, up to 400°C
* Load lock
* No wafer clamping, fixed height
* RF power 300W
* LF power 500W
|[[:File:PECVD SOP v1.pdf|SOP]]
|-<div id="Veeco ALD"></div>
|[[#Veeco ALD|Veeco ALD]]
[[File:ALD.jpg|frameless|212x212px]]
|Deposition bay 1
|up to 4" diameter or small pieces
|MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|N2 as a carrier gas
O2 or O3 as film precursor
|
* Savannah S200
* Reactor temperature: 150°C for most recipes, up to 270°C
* Ozone generator can replace O2 with O3
|[[:File:ALD Quick Start Guide - August 2023.pdf|SOP]]
|}
{| class="wikitable sticky-header"
|+PVD (physical vapor deposition)
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!# of pockets
!Power source
!Deposition materials
!Gases
!Features
!Links
|-<div id="Angstrom Evaporator"></div>
|[[#Angstrom Evaporator|Angstrom Evaporator]]
[[File:Angstrom Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|up to 6"
|4 pockets
|E-beam voltage 10kV
|Ti, Al, Al2O3
|Ar, 5% O2 in Ar
|
* variable angle stage
* substrate rotation
* substrate heater
* ion mill for substrate cleaning
* load lock
|[[:File:Angstrom Evaporator SOP v1.pdf|SOP]]
|-<div id="CHA Evaporator"></div>
|[[#CHA Evaporator|CHA Evaporator]]
[[File:CHA Evaporator.jpg|frameless|195x195px]]
|Deposition bay 2
|up to 6"
|6 pockets @ 15cc
|E-beam voltage 10kV
|Ti, Au, Pt, Pd, Cr, Ni and Ag
|
|
* Sweep controller
* motor-driven deposition shield
* 8kW heater array
* Lift-off fixturing
* substrate rotation
* substrate dome for twenty-two 100mm back loaded wafers
* Inficon IC/6 for thickness control
|[[:File:CHA Evaporator SOP v2.pdf|SOP]]
|-<div id="KJL Evaporator"></div>
|[[#KJL Evaporator|KJL Evaporator]]
[[File:KJL Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|up to 6"
|4 pockets
|E-beam voltage 5kV
|Ti, Au, Pt, Pd, Cr, Ni, and Ag. Other materials available upon request.
|
|
* substrate rotation
* source to substrate distance is approx. 15″ (381mm)
|
* [[:File:KJL Metal SOP v1.pdf|SOP]]
* [https://drive.google.com/file/d/1YhiAI7t0Oj1NVDgHsnbHGBm0qvsl0yjb/view?usp=sharing Training video]
|-<div id="Temescal Metal e-beam evaporator"></div>
|[[#Temescal Metal e-beam evaporator|Temescal Metal e-beam evaporator]]
|Deposition bay 1
|
|
|
|
|
|Not in service.
|[[:File:DEP-015 Temescal Ebeam Metal Evaporator 04-28-09.pdf|SOP]]
|- <div id="KJL Sputter"></div>
|[[#KJL Sputter|KJL Sputter]]
[[File:KJL Sputter.jpg|frameless|200x200px]]
|Deposition bay 1
|up to 6"
|
* 4 DC sources
* 1 RF/DC source
|
* DC sputter power 500 W
* RF sputter power 300 W
|Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, and ITO. Other materials available upon request.
|Ar, O2
|
* Target size: 2"
* Substrate rotation
|[[:File:KJL Sputter SOP v2.pdf|SOP]]
|}
== Dry Etching & Plasma Cleaning ==
<big>'''See also: [[Dry etching recipes|Dry etching recipes.]]'''</big>
{{sticky header}}
{| class="wikitable sticky-header"
|+Etchers
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate
size
!Allowed
materials
!Disallowed
materials
!Gases
!Table temperature
!Features
!Links
|-<div id="Oxford DRIE"></div>
|[[#Oxford DRIE|Oxford DRIE]]
[[File:DRIE.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB
|No exposed metals (except Cr as a mask)
|Ar, O2, CF4, CHF3, SF6, C4F8
|20C
|
* Model: Oxford System 100 Deep reactive-ion etcher
* Etch deep Si with Bosch process
* ICP power (max) 3000W
* Table RF power (max) 300W
|
* [[:File:DRIE SOP - August 2023.pdf|SOP]]
* [[:File:DRIE Quick Start Guide - August 2023.pdf|Quickstart guide]]
* [https://drive.google.com/file/d/1m-eROS6U5DX9oX8whYGcevRShoGtdpAr/view?usp=drive_link Load lock operation video with chamber open]
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vRAOAaR5tTHyx3b0pJpRsf3p0oh_AjsmcLllQjLOq_5Uod0HPC2WB94mBHw6brxLaQqFUvY6Iu3jJ20/pubhtml?gid=0&single=true Recipes]
|-<div id="Oxford DRIE-ALE"></div>
|[[#Oxford DRIE-ALE|Oxford DRIE-ALE]]
[[File:DRIE-ALE.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Si only - other materials may be allowed on a case by case basis
|No SiNx, SiO2, III-V materials
No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
|BCl3, Cl2, H2, N2O, CH4, CF4, CHF3, Ar, O2, C4F8, SF6
| -120 to 200C
|
* Oxford Deep reactive-ion etcher and atomic-layer etcher.
|
|- <div id="Oxford III-V"></div>
|[[#Oxford III-V|Oxford III-V]]
[[File:III-V.jpg|frameless|200x200px]]
|Etch bay 1
|4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene
|No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
|Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4
| -120 to 200C
|
* Model: Oxford PlasmaPro 100 Cobra III-V etcher
* Etch III-V materials
* Cryo cooling
* Helium backside cooling
* ICP power (max) 1500W
* Table RF power (max) 1500W
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
|
* [[:File:III V Etcher SOP - August 2023.pdf|SOP]]
* [[:File:III V Quick Start Guide - August 2023.pdf|Quickstart guide]]
|-<div id="Oxford RIE"></div>
|[[#Oxford RIE|Oxford RIE]]
[[File:RIE.jpg|frameless|200x200px]]
|Etch bay 1
|Up to 200 mm wafers
|Si, SiO2, Si3N4
As masks: Cr, graphene
Material removal: passivation (fluorine), resist (for descum), surface cleaning and activation
|No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
No deep or high-aspect-ratio processes (consult staff)
|Ar, O2, CF4, CHF3, SF6
|20C
|
* Model: Oxford PlasmaPro 80 reactive ion etcher
* Etch dielectrics
* Table RF power (max) 300W
* Optical endpoint detection: Horiba Jobin Yvon LEM G50
|
* [[:File:OXFDRIE80 SOP Updated 2026.pdf|SOP]]
* [[:File:OES SOP apr 2026.pdf|OES SOP]]
* [[:File:Laser Endpoint SOP apr 2026.pdf|Laser Endpoint SOP]]
* [https://drive.google.com/file/d/15cHZNcl4yK-OBauSIQ__ZOWv5xrtNU40/view?usp=sharing Training video]
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vQq4XcefR151mYBgklqcWF9FOO8aEkGMUIhjG4EBruVm8xm6_LGaJOBhc3icg2DIVvD4bUZ4wXFI1G_/pubhtml?gid=873136343&single=true Standard Recipes]
* [Https://docs.google.com/spreadsheets/d/1cleuEcpL6Nnjj40jUlnfaEt4aXEZ23ReL1UCT6eQsUY/edit?gid=864539770#gid=864539770 Standard Recipe Calibration]
|- <div id="XeF2 etcher"></div>
|[[#XeF2 etcher|XeF2 etcher]]
[[File:XeF2.jpg|frameless|200x200px]]
|Deposition bay 1
|Up to 6" wafers
|Si
|None
|Crystal XeF2 source
|20C
|
* Etch Si quickly and isotropically with high selectivity
* Custom built by the Armani group
|
* [[:File:XeF2 SOP - June 2023.pdf|SOP]]
* [[:File:XeF2 Quick Start Guide - May 2023.pdf|Quickstart guide]]
|}
{| class="wikitable sticky-header"
|+Plasma cleaning / ashing
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Allowed materials
!Gases
!Features
!Links
|-<div id="Tegal O2 Plasma Asher"></div>
|[[#Tegal O2 Plasma Asher|Tegal O2 Plasma Asher]]
[[File:Tegal o2 plasma.jpg|frameless|163x163px]]
|Advanced Photo Bay
|200 mm pieces or wafers
|Photoresist, graphene, CNT
|O2
|
* Model: Tegal CU90??
|[[:File:Tegal Oxygen Plasma Asher.pdf|SOP]]
|-<div id="Tegal Plasma"></div>
|[[#Tegal Plasma|Tegal Plasma]]
[[File:Tegal plasma cleaner.jpg|frameless|178x178px]]
|Advanced Photo Bay
|
|
|
|
* Model: Tegal Plasma 915
* Tool is currently not in operation
|
|-<div id="YES O2 Plasma"></div>
|[[#YES O2 Plasma|YES O2 Plasma]]
[[File:Yes o2 plasma.jpg|frameless|238x238px]]
|Advanced Photo Bay
|200mm pieces or wafers
|
|O2
|
* Model: Yield Engineering System YES-CV200RFS
* 1000W table RF power
* Heat up to 250C
|[[:File:YES Quick Start Guide - August 2023.pdf|Quickstart]]
|}
== Lithography ==
{| class="wikitable sticky-header"
|+E-beam and laser
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Exposure
resolution
!Features
!Links
|-<div id="Raith EBL"></div>
|[[#Raith EBL|Raith EBL]]
[[File:Raith EBPG5150.jpg|frameless|200x200px]]
|Ebeam Bay
|4" wafer, or small pieces up to 2"
|<8nm
|
* Model: EBPG5150
* Thermal Field Emission 50kV and 100kV
* Beam current 350nA
* Pattern Generator 125 MHZ Genlsys – Beamer
|[[:File:Raith EBPG 5150 SOP.pdf|SOP]]
|-<div id="Heidelberg DWL"></div>
|[[#Heidelberg DWL|Heidelberg DWL]]
[[File:Heidelberg DWL 66+.jpg|frameless|200x200px]]
|Metrology Bay
|
* Min substrate/mask size 5x5mm
* Max substrate/mask size 9"x9"
|300nm
|
* Model: Heidelberg DWL 66+ (Direct Write Laser)
* Front and backside alignment
* Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
* Write modes (trading off high speed and high resolution)
** High resolution (min feature size 0.3um)
** Mode IV: min size 2um
** Mode V: min size 4um
* Alignment modes: Manual, semi-automatic, and fully automatic alignment
|[[:File:Heidelberg DWL 66 plus SOP.pdf|SOP]]
|}
{| class="wikitable sticky-header"
|+UV mask aligners
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate
size
!Mask
size
!Exposure
resolution
!Features
!Links
|-<div id="Aligner A (MJB3)"></div>
|[[#Aligner A (MJB3)|Aligner A (MJB3)]]
[[File:MJB3 A.jpg|frameless|200x200px]]
|Advanced Photo bay
|Pieces up to 3”
|3” and 4”
|0.8um
|
* Backside alignment
* Exposure modes Soft, Hard, and vacuum contacts
* Exposure wavelength UV 400, 350-450 nm
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-<div id="Aligner B (MJB3)"></div>
|[[#Aligner B (MJB3)|Aligner B (MJB3)]]
[[File:MJB3 B.jpg|frameless|200x200px]]
|Photo bay
|Pieces up to 3”
|3” and 4”
|0.8um
|
* Exposure modes Soft, Hard, and vacuum contacts
* Exposure wavelength UV 400, 350-450 nm
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-<div id="Aligner C (MJB4)"></div>
|[[#Aligner C (MJB4)|Aligner C (MJB4)]]
[[File:MJB4 C.jpg|frameless|150x150px]]
|Photo bay
|Pieces up to 2"
|3", 4", and 5"
|0.8um
|
* Exposure wavelength UV 400, 350 – 450nm
* Eyepieces 10x, objectives 5x, 10x, 20x
|[[:File:Mask Aligner MJB4 SOP.pdf|SOP]]
|-<div id="Aligner D (MA BA6 Gen4)"></div>
|[[#Aligner D (MA BA6 Gen4)|Aligner D (MA BA6 Gen4)]]
[[File:MABA6 D.jpg|frameless|200x200px]]
|Advanced Photo Bay
|
|
|0.8um
|
* Backside alignment
* Exposure wavelength UV400 350 – 450 nm
* Exposure source 450W LED
* Digital camera objectives 5x, 10x
|[[:File:Mask Aligner MABA6 SOP.pdf|SOP]]
|}
== Metrology ==
{| class="wikitable sticky-header"
|+Assorted metrology
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="4-point Probe"></div>
|[[#4-point Probe|4-point Probe]]
[[File:4 point probe.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Signatone 4-point probe
* SP4 probe
* Readout with HP 34401A multimeter
|
* [[:File:Hp34401 multimeter for 4ptprobe manual.pdf|Multimeter SOP]]
|-<div id="Dektak profilometer"></div>
|[[#Dektak profilometer|Dektak profilometer]]
[[File:Dektak.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Bruker DektakXT profilometer
* Scan Length Range 55mm (2in)
* 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum
* Max. Sample Thickness 50mm (1.95in)
* Step Height Repeatability <5Å, 1sigma on 0.1μm step
* Vertical Range 1mm (0.039in.)
* Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm;
* 150 Å @ 1mm 3D capability
|[[:File:Dektak XT SOP.pdf|SOP]]
|-<div id="Ellipsometer"></div>
|[[#Ellipsometer|Ellipsometer]]
[[File:Ellipsometer.jpg|frameless|200x200px]]
|Photo bay
|
* Thin film thickness measurement
* Laser wavelengths 4050, 6328, 8300 Angstroms
* Wafer mapping Yes
|[[SOP:Ellipsometer|SOP]]
|-<div id="Filmetrics F10"></div>
|[[Tool list#Filmetrics F10|Filmetrics F10]]
[[File:Filmetrics F20.jpg|frameless|233x233px]]
|Photo bay
|Thin film thickness measurement
|[[Filmetrics F10 Standard Operating Procedure|SOP]]
|}
{| class="wikitable sticky-header"
|+Microscopes
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="Desktop SEM"></div>
|[[#Desktop SEM|Desktop SEM]]
[[File:Phenom SEM.jpg|frameless|200x200px]]
|Metrology bay
|
* Model: Phenom ProX G6 Desktop Scanning Electron Microscope
* Acc Voltage 5 – 15kV
* Resolution <10nm (for BSED)
* Magnification 80-150,000x
* Electron or optical imaging modes
* Sample Size – up to 32mm
|
* [[:File:Phenom SEM operation procedures.pdf|Operation manual]]
|-<div id="Nikon LV 150 optical microscope"></div>
|[[#Nikon LV 150 optical microscope|Nikon LV 150 optical microscope]]
[[File:Nikon LV 150 microscope.jpg|frameless|200x200px]]
|Photo bay
|
* Brightfield & Darkfield Polarizer/Analyzer
* Halogen Lamp 5x, 10x, 20x, 50x, 100x
* Camera – 5.9 MP resolution
* USB output/WIFI for exporting images
|[[:File:Nikon Eclipse LV150N Microscope SOP v1.pdf|SOP]]
|-<div id="Max ERB optical microscope"></div>
|[[#Max ERB optical microscope|Max ERB optical microscope]]
[[File:Max ERB microscope.jpg|frameless|186x186px]]
|Photo bay
|
* Zeiss 47 30 12 9902 binocular microscope head
* MSA-001 linear encoder
|
|-<div id="Zeiss optical microscope"></div>
|[[#Zeiss optical microscope|Zeiss optical microscope]]
[[File:Zeiss microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
|
|-<div id="Nikon SMZ-10A optical microscope"></div>
|[[#Nikon SMZ-10A optical microscope|Nikon SMZ-10A optical microscope]]
[[File:Nikon smz-10a microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
* Dyna Lite 150 light source
* Olympus UC30 camera
|
|-<div id="Nikon optical microscope"></div>
|[[#Nikon optical microscope|Nikon optical microscope]]
[[File:Unknown Nikon optical microscope.jpg|frameless|200x200px]]
|Advanced photo bay
|
* Dyna Lite 150 light source
|
|}
== Packaging & Mechanical Tooling ==
{| class="wikitable sticky-header"
|+Wafer and die processing
!<div style="line-height: 75px;">Tool</div>
!Location
!Substrate size
!Features
!Links
|-<div id="Ball & Wedge bonder"></div>
|[[#Ball & Wedge bonder|Ball & Wedge bonder]]
[[File:Fs bondtec wire bonder.jpg|frameless|200x200px]]
|Etch bay 2
|
|
* Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
|
* [[:File:SOP-Wire-Bonder.pdf|SOP]]
* [[:File:Wire bonder 53XXBDA en-manual.pdf|Operation manual]]
|-<div id="Dicing Saw"></div>
|[[#Dicing Saw|Dicing Saw]]
[[File:Dicing saw.jpg|frameless|200x200px]]
|Common chase
|up to 10" or 250x250 mm
|
* Model: DISCO Corp. DAD3350 Dicing Saw
* 1.8 kW spindle
* X-axis Cutting range 260 mm
* Cutting speed mm/s 0.1 ～ 600
* Y-axis Cutting range 260 mm
* Index step: 0.0001 mm Z-axis
* Max. stroke: 32.2 mm
* Moving resolution: 0.00005 mm
* Repeatability accuracy: 0.001 mm
|
* [[:File:Disco Dicing Saw SOP v3.pdf|SOP]]
* [[:File:Dicing Saw Manual.pdf|Operation manual]]
* [https://drive.google.com/file/d/1yX8D712iCx9p6fb6fpUrM641zMq_xhoh/view?usp=sharing Training video part 1]
* [https://drive.google.com/file/d/1d6mJyI4XWhKVxlKeKhPMkS9pXmzbGAkv/view?usp=sharing Training video part 2]
* [https://drive.google.com/file/d/1SOrdsiE0oh6ZT0NZ7HBQ9P030tDoDxnm/view?usp=sharing Training video part 3]
|-<div id="Mini Polisher"></div>
|[[#Mini Polisher|Mini Polisher]]
[[File:Mini polisher with parts installed.jpg|frameless|200x200px]]
|Common chase
|up to 1" diameter
|
* EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
* 20nm, 50nm, 0.25um, 1um, 5um, 10um polishing slurries/pastes available
* Smooth polishing pads and sanding pads from 60-3000 grit available
|
* [[SOP:Mini Polisher|SOP]]
* [https://mtixtl.com/products/unipol-300 Manufacturer product page, including operation videos]
|-<div id="LatticeAx Cleaver"></div>
|[[#LatticeAx Cleaver|LatticeAx Cleaver]]
[[File:Latticeax cleaver.jpg|frameless|156x156px]]
|Photo bay
|
|
* LatticeAx 420 Cleaving System
* 2-axis linear stage
* Digital camera
|
* [[:File:LatticeAx 420 SOP v1.pdf|SOP]]
* [https://drive.google.com/file/d/1141aO-N5KNwdH-JWKg3Zsqe0k6bCeVLz/view?usp=drive_link Operation video]
* [[:File:LatticeAx 420 Manual.pdf|Operation manual]]
|-<div id="FlipScribe Cleaver"></div>
|[[#FlipScribe Cleaver|FlipScribe Cleaver]]
[[File:Flipscribe cleaver.jpg|frameless|208x208px]]
|Photo bay
|
|
* Model: LatticeGear FlipScribe
|
* [[:File:FlipScribe Manual.pdf|Operation manual]]
* [[:File:FlipScribe Quick Guide.pdf|Quickstart]]
|-<div id="Vacuum Bag Sealer"></div>
|[[#Vacuum Bag Sealer|Vacuum Bag Sealer]]
[[File:Gramatech vacuum bag sealer.jpg|frameless|209x209px]]
|Advanced photo bay
|
|
* Model: Gramatech GVS2600R Vacuum Sealer
* 36" max sealing width
* N2 purge bags before sealing
* Foot lever operation
* Automated purge/vacuum/heat-seal/cool sequence
|
|}
== PCB Processing ==
{| class="wikitable sticky-header"
|+PCB processing
!<div style="line-height: 75px;">Tool</div>
!Location
!Features
!Links
|-<div id="LPKF PCB mill"></div>
|[[#LPKF PCB mill|LPKF PCB mill]]
[[File:LPKF ProtoMat S103 PCB mill.jpg|frameless|200x200px]]
|Common chase
|
* Model: LPKF ProtoMat S103
* PCB milling, through hole drilling, contour routing, solder dispensing
* CircuitPro software available for design work
* Accepts design file Gerber export from various CAD softwares
* Mechanical resolution 0.5um
* Max PCB size: A4
|
* [[LPKF Standard Operating Procedure|SOP]]
* [[:File:2406-protomat-s43-serie-manual-.pdf|Operation manual]]
|-<div id="LPKF electroplater"></div>
|[[#LPKF electroplater|LPKF electroplater]]
[[File:LPKF Contac S4 electroplater.jpg|frameless|200x200px]]
|Common chase
|
* Model: LPKF Contac S4
* Multistep clean and plate process
* Through-hole copper electroplating
* Not yet in use. [[Contact Nanofab Staff|Contact Nanofab staff]] if interested and we can procure the chemical set.
|[[:File:3940-manual-contac-s4-v3-0-en.pdf|Operation manual]]
|}
== Wet Process ==
{| class="wikitable sticky-header"
|+Solvent fume hood (located in Metrology bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
| rowspan="4" |[[File:Fume hood solvent.jpg|frameless|500x500px]]
Model: Air Control, Inc CS-41-316LSS-8ft
|Heated ultrasonic bath
|
| rowspan="4" |[[:File:Solvent Fumehoods SOP v1.pdf|SOP]]
|-
|-
|[[RTA]]
|Torrey Pines hot plate
|Rapid Thermal Annealer
|Model: Torrey Pines HS70
|-
|Solvent drains
|
|-
|N2 sprayers
|
|}
|}
 
{| class="wikitable sticky-header"
== Deposition ==
|+Acid fume hood left-side (located in Etch bay)
{| class="wikitable"
!
|+CVD (chemical vapor deposition)
!Tool
!Description
!Links
|-
|This fume hood is the only fume hood where the Piranha and Nanostrip chemicals may be used.
|
|
|
|-
| rowspan="4" |[[File:Fume hood acid left.jpg|frameless|500x500px]]
Model: Air Control, Inc. CS-41-C-PVC-7ft
|Heated bath
|Model: Imtec Accubath
| rowspan="4" |[[:File:Etch Bay Fumehoods SOP v1.pdf|SOP]]
|-
|Quick-dump-rinse tank (QDR)
|
|-
|DI water tap
|
|-
|N2 gun
|
|}
{| class="wikitable sticky-header"
|+Acid fume hood right-side (located in Etch bay)
!
!Tool
!Description
!Links
|-
|Piranha and Nanostrip chemicals are NOT allowed in this fume hood.
|
|
|
|-
| rowspan="6" |[[File:Fume hood acid right.jpg|frameless|500x500px]]
Model: Air Control, Inc. CS-41-C-PVC-7ft
|Heated bath
|Model: Imtec Accubath
| rowspan="6" |[[:File:Etch Bay Fumehoods SOP v1.pdf|SOP]]
|-
|Torrey Pines hot plate left
| rowspan="2" |Model: Torrey Pines HS70
|-
|Torrey Pines hot plate right
|-
|Quick-dump-rinse tank (QDR)
|
|-
|DI water tap
|
|-
|N2 sprayer
|
|}
{| class="wikitable sticky-header"
|+Resist fume hood (located in Advanced Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|[[Veeco ALD]]
| rowspan="8" |[[File:Fume hood resist.jpg|frameless|400x400px]]
|Atomic Layer Deposition
Model: Air Control, Inc. CS-41-316-LSS-8ft
|Spinner left
| rowspan="2" |Laurell resist spinner
| rowspan="2" |[[:File:Laurell Spinner SOP v1.pdf|SOP]]
|-
|-
|[[Oxford PECVD]]
|Spinner right
|Plasma-enhanced chemical vapor deposition
|-
|Bake plate 1
| rowspan="4" |Apogee bake plate
| rowspan="4" |[[:File:Apogee Hotplate SOP v1.pdf|SOP]]
|-
|Bake plate 2
|-
|Bake plate 3
|-
|Bake plate 4
|-
|N2 sprayer left
|
|
|-
|N2 sprayer right
|
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+PVD (physical vapor deposition)
|+Base and developer fume hood left-side (located in Advanced Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
| rowspan="6" |[[File:Fume hood development left.jpg|frameless|500x500px]]
Model: Air Control, Inc. CS-41-C-PVC-6ft
|Heated bath
|Model: Imtec Accubath
| rowspan="5" |[[:File:Advanced Photobay Fumehoods SOP v1.pdf|SOP]]
|-
|-
|[[Angstrom Evaporator]]
|Torrey Pines hot plate
|Angstrom Engineering e-beam evaporator
|Model: Torrey Pines HS70
|-
|-
|[[CHA Evaporator]]
|Quick-dump-rinse tank (QDR)
|CHA Industries e-beam evaporator
|
|-
|-
|[[KJL Evaporator]]
|DI water tap
|Kurt J. Lesker e-beam evaporator
|
|-
|-
|[[Temescal Metal]]
|DI water gun
|Temescal e-beam evaporator
|
|-
|-
|[[KJL Sputter]]
|N2 sprayer
|Kurt J. Lesker sputterer
|
|
|}
|}
 
{| class="wikitable sticky-header"
== Lithography ==
|+Base and developer fume hood right-side (located in Advanced Photo bay)
{| class="wikitable"
!
|+E-beam lithography
!Tool
!Tool
!Description
!Description
!Links
|-
| rowspan="6" |[[File:Fume hood development right.jpg|frameless|500x500px]]
Model: Air Control, Inc. CS-41-C-PVC-6ft
|Heated bath
|Model: Imtec Accubath
| rowspan="6" |[[:File:Advanced Photobay Fumehoods SOP v1.pdf|SOP]]
|-
|Torrey Pines hot plate
|Model: Torrey Pines HS70
|-
|Quick-dump-rinse tank (QDR)
|
|-
|DI water tap
|
|-
|DI water gun
|
|-
|-
|[[Raith]]
|N2 sprayer
|Raith e-beam lithography EBPG5150
|
|}
|}
{| class="wikitable"
{| class="wikitable sticky-header"
|+Laser writing
|+E-beam resist fume hood (located in Photo bay)
!
!Tool
!Tool
!Description
!Description
!Links
|-
|-
|[[Heidelberg]]
| rowspan="8" |[[File:Fume hood ebeam resist.jpg|frameless|500x500px]]
|Heidelberg DWL 66+ Laser Writer
Model: Precision Air Technology CS-41-316LSS-8ft
|Headway spinner left
| rowspan="2" |
* Model: Headway Research CB15
* Controller model: Headway Research PWM50
| rowspan="2" |[[:File:Headway Spinner SOP v1.pdf|SOP]]
|-
|Headway spinner right
|-
|Apogee hot plate left
|
| rowspan="2" |[[:File:Apogee Hotplate SOP v1.pdf|SOP]]
|-
|Apogee hot plate right
|
|-
|Ultrasonic heated bath
|
|
|-
|Torrey Pines hot plate/ stirrer
|Model: Torrey Pines HS70
|
|-
|N2 gun left
|
|
|-
|N2 gun right
|
|
|}
|}
== Etching ==
== Metrology ==
== Oxidation ==
== Packaging ==
== Testers ==

Latest revision as of 13:19, 21 April 2026

Anneal & Furnace

Tool
 Location Substrate size Gases Features Links
RTA (Rapid Thermal Annealer)

Deposition bay 1 Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability 2%H2 in N2, N2, O2, Ar
  • Model: Allwin AW-610T
  • Programmable, 10°C to 120°C per second.
  • ERP Pyrometer 450-1250°C with ±1°C
  • Thermocouple 100-800°C with ±0.5°C accuracy & rapid response
  • Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer
  • Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
 SOP
Cascade Tek vacuum oven

Advanced Photo bay
  • Model: Cascade TEK TVO-2
 SOP
Blue M furnace big

Advanced Photo bay
  • Model: Blue M 0V-12A
  • Temp range: up to 260C
 SOP
Blue M furnace little

Advanced Photo bay
  • Model: Blue M 0V-8A
  • Temp range: up to 260C
 SOP
Narco vacuum oven

Advanced Photo bay
  • Model: Narco 5831 Vacuum Oven

Deposition

CVD (chemical vapor deposition)
Tool
 Location Substrate size Deposition films Gases Features Links
Oxford PECVD

Deposition bay 1 up to 6" wafer SiO2, Si3N4, SiNO 2% SiH4/N2, NH3, N2O, N2, He, CF4
  • PlasmaPro System 100
  • Electrode specs: 240mm diameter, up to 400°C
  • Load lock
  • No wafer clamping, fixed height
  • RF power 300W
  • LF power 500W
 SOP
Veeco ALD

Deposition bay 1 up to 4" diameter or small pieces MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2 N2 as a carrier gas

O2 or O3 as film precursor

  • Savannah S200
  • Reactor temperature: 150°C for most recipes, up to 270°C
  • Ozone generator can replace O2 with O3
 SOP
PVD (physical vapor deposition)
Tool
 Location Substrate size # of pockets Power source Deposition materials Gases Features Links
Angstrom Evaporator

Deposition bay 1 up to 6" 4 pockets E-beam voltage 10kV Ti, Al, Al2O3 Ar, 5% O2 in Ar
  • variable angle stage
  • substrate rotation
  • substrate heater
  • ion mill for substrate cleaning
  • load lock
 SOP
CHA Evaporator

Deposition bay 2 up to 6" 6 pockets @ 15cc E-beam voltage 10kV Ti, Au, Pt, Pd, Cr, Ni and Ag
  • Sweep controller
  • motor-driven deposition shield
  • 8kW heater array
  • Lift-off fixturing
  • substrate rotation
  • substrate dome for twenty-two 100mm back loaded wafers
  • Inficon IC/6 for thickness control
 SOP
KJL Evaporator

Deposition bay 1 up to 6" 4 pockets E-beam voltage 5kV Ti, Au, Pt, Pd, Cr, Ni, and Ag. Other materials available upon request.
  • substrate rotation
  • source to substrate distance is approx. 15″ (381mm)
Temescal Metal e-beam evaporator Deposition bay 1 Not in service. SOP
KJL Sputter

Deposition bay 1 up to 6"
  • 4 DC sources
  • 1 RF/DC source
  • DC sputter power 500 W
  • RF sputter power 300 W
 Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, and ITO. Other materials available upon request. Ar, O2
  • Target size: 2"
  • Substrate rotation
 SOP

Dry Etching & Plasma Cleaning

See also: Dry etching recipes.

Etchers
Tool
 Location Substrate

size

Allowed

materials

Disallowed

materials

Gases Table temperature Features Links
Oxford DRIE

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB No exposed metals (except Cr as a mask) Ar, O2, CF4, CHF3, SF6, C4F8 20C
  • Model: Oxford System 100 Deep reactive-ion etcher
  • Etch deep Si with Bosch process
  • ICP power (max) 3000W
  • Table RF power (max) 300W
Oxford DRIE-ALE

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

Si only - other materials may be allowed on a case by case basis No SiNx, SiO2, III-V materials

No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

BCl3, Cl2, H2, N2O, CH4, CF4, CHF3, Ar, O2, C4F8, SF6 -120 to 200C
  • Oxford Deep reactive-ion etcher and atomic-layer etcher.
Oxford III-V

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4 -120 to 200C
  • Model: Oxford PlasmaPro 100 Cobra III-V etcher
  • Etch III-V materials
  • Cryo cooling
  • Helium backside cooling
  • ICP power (max) 1500W
  • Table RF power (max) 1500W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
Oxford RIE

Etch bay 1 Up to 200 mm wafers Si, SiO2, Si3N4

As masks: Cr, graphene Material removal: passivation (fluorine), resist (for descum), surface cleaning and activation

No exposed metals (except Cr as a mask)

No deep etching polymers (>1 µm), may be used as a mask only

No deep or high-aspect-ratio processes (consult staff)

Ar, O2, CF4, CHF3, SF6 20C
  • Model: Oxford PlasmaPro 80 reactive ion etcher
  • Etch dielectrics
  • Table RF power (max) 300W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
XeF2 etcher

Deposition bay 1 Up to 6" wafers Si None Crystal XeF2 source 20C
  • Etch Si quickly and isotropically with high selectivity
  • Custom built by the Armani group
Plasma cleaning / ashing
Tool
 Location Substrate size Allowed materials Gases Features Links
Tegal O2 Plasma Asher

Advanced Photo Bay 200 mm pieces or wafers Photoresist, graphene, CNT O2
  • Model: Tegal CU90??
 SOP
Tegal Plasma

Advanced Photo Bay
  • Model: Tegal Plasma 915
  • Tool is currently not in operation
YES O2 Plasma

Advanced Photo Bay 200mm pieces or wafers O2
  • Model: Yield Engineering System YES-CV200RFS
  • 1000W table RF power
  • Heat up to 250C
 Quickstart

Lithography

E-beam and laser
Tool
 Location Substrate size Exposure

resolution

Features Links
Raith EBL

Ebeam Bay 4" wafer, or small pieces up to 2" <8nm
  • Model: EBPG5150
  • Thermal Field Emission 50kV and 100kV
  • Beam current 350nA
  • Pattern Generator 125 MHZ Genlsys – Beamer
 SOP
Heidelberg DWL

Metrology Bay
  • Min substrate/mask size 5x5mm
  • Max substrate/mask size 9"x9"
 300nm
  • Model: Heidelberg DWL 66+ (Direct Write Laser)
  • Front and backside alignment
  • Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
  • Write modes (trading off high speed and high resolution)
    • High resolution (min feature size 0.3um)
    • Mode IV: min size 2um
    • Mode V: min size 4um
  • Alignment modes: Manual, semi-automatic, and fully automatic alignment
 SOP
UV mask aligners
Tool
 Location Substrate

size

Mask

size

Exposure

resolution

Features Links
Aligner A (MJB3)

Advanced Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Backside alignment
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner B (MJB3)

Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner C (MJB4)

Photo bay Pieces up to 2" 3", 4", and 5" 0.8um
  • Exposure wavelength UV 400, 350 – 450nm
  • Eyepieces 10x, objectives 5x, 10x, 20x
 SOP
Aligner D (MA BA6 Gen4)

Advanced Photo Bay 0.8um
  • Backside alignment
  • Exposure wavelength UV400 350 – 450 nm
  • Exposure source 450W LED
  • Digital camera objectives 5x, 10x
 SOP

Metrology

Assorted metrology
Tool
 Location Features Links
4-point Probe

Metrology bay
  • Model: Signatone 4-point probe
  • SP4 probe
  • Readout with HP 34401A multimeter
Dektak profilometer

Metrology bay
  • Model: Bruker DektakXT profilometer
  • Scan Length Range 55mm (2in)
  • 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum
  • Max. Sample Thickness 50mm (1.95in)
  • Step Height Repeatability <5Å, 1sigma on 0.1μm step
  • Vertical Range 1mm (0.039in.)
  • Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm;
  • 150 Å @ 1mm 3D capability
 SOP
Ellipsometer

Photo bay
  • Thin film thickness measurement
  • Laser wavelengths 4050, 6328, 8300 Angstroms
  • Wafer mapping Yes
 SOP
Filmetrics F10

Photo bay Thin film thickness measurement SOP
Microscopes
Tool
 Location Features Links
Desktop SEM

Metrology bay
  • Model: Phenom ProX G6 Desktop Scanning Electron Microscope
  • Acc Voltage 5 – 15kV
  • Resolution <10nm (for BSED)
  • Magnification 80-150,000x
  • Electron or optical imaging modes
  • Sample Size – up to 32mm
Nikon LV 150 optical microscope

Photo bay
  • Brightfield & Darkfield Polarizer/Analyzer
  • Halogen Lamp 5x, 10x, 20x, 50x, 100x
  • Camera – 5.9 MP resolution
  • USB output/WIFI for exporting images
 SOP
Max ERB optical microscope

Photo bay
  • Zeiss 47 30 12 9902 binocular microscope head
  • MSA-001 linear encoder
Zeiss optical microscope

Advanced photo bay
Nikon SMZ-10A optical microscope

Advanced photo bay
  • Dyna Lite 150 light source
  • Olympus UC30 camera
Nikon optical microscope

Advanced photo bay
  • Dyna Lite 150 light source

Packaging & Mechanical Tooling

Wafer and die processing
Tool
 Location Substrate size Features Links
Ball & Wedge bonder

Etch bay 2
  • Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw

Common chase up to 10" or 250x250 mm
  • Model: DISCO Corp. DAD3350 Dicing Saw
  • 1.8 kW spindle
  • X-axis Cutting range 260 mm
  • Cutting speed mm/s 0.1 ～ 600
  • Y-axis Cutting range 260 mm
  • Index step: 0.0001 mm Z-axis
  • Max. stroke: 32.2 mm
  • Moving resolution: 0.00005 mm
  • Repeatability accuracy: 0.001 mm
Mini Polisher

Common chase up to 1" diameter
  • EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
  • 20nm, 50nm, 0.25um, 1um, 5um, 10um polishing slurries/pastes available
  • Smooth polishing pads and sanding pads from 60-3000 grit available
LatticeAx Cleaver

Photo bay
  • LatticeAx 420 Cleaving System
  • 2-axis linear stage
  • Digital camera
FlipScribe Cleaver

Photo bay
  • Model: LatticeGear FlipScribe
Vacuum Bag Sealer

Advanced photo bay
  • Model: Gramatech GVS2600R Vacuum Sealer
  • 36" max sealing width
  • N2 purge bags before sealing
  • Foot lever operation
  • Automated purge/vacuum/heat-seal/cool sequence

PCB Processing

PCB processing
Tool
 Location Features Links
LPKF PCB mill

Common chase
  • Model: LPKF ProtoMat S103
  • PCB milling, through hole drilling, contour routing, solder dispensing
  • CircuitPro software available for design work
  • Accepts design file Gerber export from various CAD softwares
  • Mechanical resolution 0.5um
  • Max PCB size: A4
LPKF electroplater

Common chase
  • Model: LPKF Contac S4
  • Multistep clean and plate process
  • Through-hole copper electroplating
  • Not yet in use. Contact Nanofab staff if interested and we can procure the chemical set.
 Operation manual

Wet Process

Solvent fume hood (located in Metrology bay)
Tool Description Links

Model: Air Control, Inc CS-41-316LSS-8ft

Heated ultrasonic bath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Solvent drains
N2 sprayers
Acid fume hood left-side (located in Etch bay)
Tool Description Links
This fume hood is the only fume hood where the Piranha and Nanostrip chemicals may be used.

Model: Air Control, Inc. CS-41-C-PVC-7ft

Heated bath Model: Imtec Accubath SOP
Quick-dump-rinse tank (QDR)
DI water tap
N2 gun
Acid fume hood right-side (located in Etch bay)
Tool Description Links
Piranha and Nanostrip chemicals are NOT allowed in this fume hood.

Model: Air Control, Inc. CS-41-C-PVC-7ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate left Model: Torrey Pines HS70
Torrey Pines hot plate right
Quick-dump-rinse tank (QDR)
DI water tap
N2 sprayer
Resist fume hood (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-316-LSS-8ft

Spinner left Laurell resist spinner SOP
Spinner right
Bake plate 1 Apogee bake plate SOP
Bake plate 2
Bake plate 3
Bake plate 4
N2 sprayer left
N2 sprayer right
Base and developer fume hood left-side (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-C-PVC-6ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
DI water gun
N2 sprayer
Base and developer fume hood right-side (located in Advanced Photo bay)
Tool Description Links

Model: Air Control, Inc. CS-41-C-PVC-6ft

Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
DI water gun
N2 sprayer
E-beam resist fume hood (located in Photo bay)
Tool Description Links

Model: Precision Air Technology CS-41-316LSS-8ft

Headway spinner left
  • Model: Headway Research CB15
  • Controller model: Headway Research PWM50
 SOP
Headway spinner right
Apogee hot plate left SOP
Apogee hot plate right
Ultrasonic heated bath
Torrey Pines hot plate/ stirrer Model: Torrey Pines HS70
N2 gun left
N2 gun right
Retrieved from "https://wiki.nanofab.usc.edu/index.php?title=Tool_list&oldid=871"