Oxford RIE

About

Oxford PlasmaPro 80 RIE tool in Etch Bay

Films / Materials: This is an Oxford Instruments PlasmaPro 80 reactive ion etcher (RIE) optimized for etching dielectric materials such as SiO₂, Si₃N₄, and Si, with good anisotropy and control. It is primarily used for etching dielectrics in micro- and nanofabrication processes.

Hardware: Parallel-plate capacitively-coupled RF plasma system (13.56 MHz). Open-load design for fast loading/unloading of samples. No load lock; direct chamber access. Electrode/table temperature controlled at 20°C (ambient/chilled). Includes optical endpoint detection (Horiba Jobin Yvon LEM G50) for precise process stop.

Gases:

• Ar (argon – physical sputtering/milling component)
• O₂ (oxygen – for ashing, oxidation, or enhancing etch rates)
• CF₄ (tetrafluoromethane – fluorine-based etching of SiO₂/Si₃N₄)
• CHF₃ (trifluoromethane – for selective SiO₂ etching, polymer sidewall passivation)
• SF₆ (sulfur hexafluoride – high-rate isotropic/fluorine etching of Si/SiO₂)

Etch Properties:

• Primarily anisotropic etching of dielectrics via ion bombardment and chemical reactions.
• Suitable for shallow to moderate depth etches (avoid deep polymer etching >1 µm due to restrictions).
• High selectivity possible depending on gas mix and power (e.g., SiO₂ over Si with CHF₃/O₂).
• Excellent process control for uniformity across up to 200 mm substrates.

Applications: Etching of dielectric layers (e.g., oxide/nitride masks, passivation removal, via openings), resist descum, surface cleaning/activation. Not for exposed metals (except Cr) or deep polymer etches, may be used as a mask only.

Usage: Load sample directly (pieces to 200 mm wafers), select/load recipe, set time/power based on calibrated etch rates. Use endpoint detection for timed or auto-stop processes. Monitor particles and uniformity post-etch.

Detailed Specifications

• Model: PlasmaPro 80 reactive ion etcher
• Location: Etch Bay 1
• Substrate size: Up to 8(200 mm) wafers (pieces/smaller possible; open loading)
• RF Power: Table RF power (max) 300 W (13.56 MHz)
• Table temperature: 20°C (chilled/controlled)
• Gases: CHF₃, Ar, O₂, CF₄, SF₆
• Features: Optical endpoint detection (Horiba Jobin Yvon LEM G50), open-load design for fast access, excellent etch uniformity and rate control
• Restrictions: No exposed metals (except Cr); no deep etching polymers (>1 µm) may be used as a mask only.

Documentation

• SOP
• OES SOP
• Laser Endpoint SOP
• Training video
• Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)

Recipes & Data

• Standard Recipes: Check Standard Recipe or internal process logs for calibrated RIE processes (e.g., SiO₂ etch, Si₃N₄ etch, descum).
• Process Control: Monitor etch rates, selectivity, and uniformity (e.g. via Dektak profilometer or ellipsometer post-etch). Perform test runs and particle scans as per lab protocols.
• Calibration Data: See if available.

Template:Under review This article was generated with assistance from a large language model (LLM) and is currently under human review and editing. Content may contain inaccuracies, unverified claims, or other issues. Please help improve it.