Veeco ALD

About

Veeco Savannah S200 ALD tool in Deposition Bay 1

Films: This is a Veeco Savannah S200 thermal atomic layer deposition (ALD) system designed for precise, conformal, pinhole-free thin films at the atomic scale. It excels at depositing high-quality high-k dielectrics, metal oxides, and noble metals with excellent uniformity and step coverage, even on high-aspect-ratio structures.

Hardware: Thermal ALD system with sequential self-limiting reactions. Equipped with heated precursor lines (up to multiple lines supported). Reactor chamber with substrate heater. N₂ carrier/purge gas flow. Optional ozone generator for enhanced oxidation using O₃ instead of O₂/H₂O. No plasma (thermal only).

Precursors / Gases:

• N₂ (nitrogen – primary carrier and purge gas)
• O₂ or O₃ (oxygen or ozone – oxidant for oxide films; ozone generator available for better reactivity at lower temperatures)
• Metal-organic precursors for specific films (e.g., TMA for Al₂O₃, TDMAHf for HfO₂, etc. – lab-stocked or user-provided)

Film Properties:

• Al₂O₃: Excellent dielectric, conformal, low leakage; typical growth ~1 Å/cycle.
• HfO₂, ZrO₂: High-k dielectrics for gate stacks or capacitors.
• TiO₂: Photocatalytic or optical applications.
• Pt, Ru: Noble metals for electrodes or catalysis.
• MgO: Dielectric or barrier layers.

Films offer angstrom-level thickness control, high conformality, and tunable properties via temperature and precursor pulsing.

Applications: High-k gate dielectrics, passivation layers, barriers, optical coatings, electrodes, MEMS, nanotechnology research. Ideal for 3D structures, non-planar surfaces, and precise thickness control.

Usage: Load sample (pieces or up to 4" wafer), preheat reactor, select/load recipe, run cycles (pulse-purge sequence). Deposition time based on cycles (not time-based like CVD). Check calibrated growth rates via test runs.

Detailed Specifications

• Model: Savannah S200
• Location: Deposition bay 1
• Substrate size: Up to 4" diameter wafers or small pieces
• Reactor temperature: 150°C for most recipes; up to 270°C (some recipes may support higher, confirm per process)
• Oxidant options: O₂ or O₃ (ozone generator available to replace O₂ with O₃ for improved film quality)
• Carrier gas: N₂
• Features: Thermal ALD (no plasma), excellent conformality, angstrom-level control, heated precursor lines, purge efficiency for low contamination
• Restrictions: Check lab policies for user-provided precursors; limited to approved films
• Other: High uniformity, suitable for R&D and multi-user environment

Documentation

• SOP / Quick Start Guide
• Training required – contact lab staff (Joey)

Recipes & Data

• Standard Recipes: Al₂O₃ (TMA + H₂O/O₃), HfO₂, ZrO₂, TiO₂, Pt, Ru, MgO – check internal logs or calibrated growth rates per precursor.
• Process Control: Measure thickness/uniformity post-deposition (e.g., via Ellipsometer or Filmetrics F20). Perform test depositions and particle scans as per lab protocols.
• Growth Rates: Typically 0.8–1.2 Å/cycle for common oxides; confirm current rates with tool manager or recent DepCals.

Template:Under review This article was generated with assistance from a large language model (LLM) and is currently under human review and editing. Content may contain inaccuracies, unverified claims, or other issues. Please help improve it.