Tool list: Difference between revisions

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Dry Etching & Plasma Cleaning: add materials to allow/disallowlists for RIE80
 
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|Up to 200 mm wafers
|Up to 200 mm wafers
|Si, SiO2, Si3N4
|Si, SiO2, Si3N4
As masks: Cr, graphene
Material removal: passivation (fluorine), resist (for descum), surface cleaning and activation
|No exposed metals (except Cr as a mask)
|No exposed metals (except Cr as a mask)
No deep etching polymers (>1 µm), may be used as a mask only
No deep etching polymers (>1 µm), may be used as a mask only
No deep or high-aspect-ratio processes (consult staff)
|Ar, O2, CF4, CHF3, SF6
|Ar, O2, CF4, CHF3, SF6
|20C
|20C

Latest revision as of 13:19, 21 April 2026

Anneal & Furnace

Deposition

Dry Etching & Plasma Cleaning

See also: Dry etching recipes.

Lithography

Metrology

Packaging & Mechanical Tooling

PCB Processing

Wet Process