Raith EBL

About

Raith EBPG5150 Electron Beam Lithography system in Ebeam Bay

Process: This is a high-performance direct-write electron beam lithography (EBL) system capable of ultra-high resolution patterning down to <8 nm. It uses a thermal field emission gun for precise, high-current beam control and is ideal for nanofabrication requiring sub-10 nm features, custom nanostructures, or low-volume prototyping.

Hardware: Thermal field emission electron column with dual voltage modes (50 kV and 100 kV). High beam current (up to 350 nA) for faster writing. Laser interferometer stage for accurate positioning. GenISys Beamer pattern generator (125 MHz) for complex data handling and proximity effect correction. Substrate holder for pieces or wafers with precise alignment.

Key Features:

• Resolution: <8 nm (best demonstrated)
• Acceleration voltage: 50 kV and 100 kV
• Beam current: Up to 350 nA
• Pattern generator: GenISys Beamer (125 MHz)
• Stage: Laser interferometer for nm-level accuracy
• Write field: Variable, with stitching for large patterns

Applications:

• Nanowires, quantum dots, and single-electron devices
• Photonic crystals and plasmonic nanostructures
• High-resolution gratings and metasurfaces
• Nanoimprint templates and masters
• Custom masks or direct-write on non-standard substrates
• Research in 2D materials, spintronics, and quantum computing

Usage: Load sample (small pieces up to 4" wafer), align, calibrate beam, load pattern file (GDSII or similar), set exposure parameters (dose, voltage, current), run write. Use proximity correction and stitching for large areas. Unload after development check.

Detailed Specifications

• Model: Raith EBPG5150
• Location: Ebeam Bay
• Substrate size: 4" wafer standard; small pieces up to 2" (custom holders available)
• Resolution: <8 nm (best achieved)
• Acceleration voltage: 50 kV and 100 kV (thermal field emission gun)
• Beam current: Up to 350 nA
• Pattern generator: GenISys Beamer – 125 MHz
• Features: High-speed writing, proximity effect correction, laser stage metrology, high overlay accuracy
• Other: Ultra-high resolution direct-write tool for advanced nanofabrication research

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)

Recipes & Data

• Standard Resists / Doses: Common settings include:

 * PMMA (950k or 495k): 200–400 µC/cm² at 50 kV / 100 kV
 * HSQ (hydrogen silsesquioxane): 1000–3000 µC/cm² (negative tone)
 * ZEP520A: 200–300 µC/cm² (positive tone, high contrast)
 * ma-N 2400 series: Negative tone for high resolution

• Process Control: Calibrate dose via test patterns, measure feature size via SEM. Check overlay and stitching accuracy for large fields.
• Notes: Use 100 kV for ultimate resolution and reduced proximity effects. Proximity correction essential for dense patterns. Development optimized per resist.

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