Heidelberg DWL

About

Heidelberg DWL 66+ Direct Write Laser Lithography system in Metrology Bay

Process: This is a high-resolution direct-write laser lithography system that patterns photoresist directly on substrates or mask blanks without a physical photomask. It uses a 405 nm ("h-line") laser for grayscale and binary exposure, offering flexibility in feature size, write speed, and alignment.

Hardware: 405 nm diode laser with multiple write modes trading resolution vs. speed. Grayscale and advanced grayscale capability for 3D/gray-level structures. Front- and backside alignment system. Automatic/manual alignment modes. High-precision stage for large-area patterning.

Key Features:

• Resolution: 300 nm minimum feature size (high-resolution mode)
• Write modes:

 * High resolution: min feature ~0.3 µm
 * Mode IV: min feature ~2 µm (faster)
 * Mode V: min feature ~4 µm (fastest)

• Exposure: 405 nm laser ("h-line" compatible resists)
• Alignment: Manual, semi-automatic, fully automatic; front- and backside capability
• Substrate/mask size: Min 5×5 mm, max 9"×9" (suitable for masks up to 9 inch, wafers/pieces)

Applications:

• Fabrication of photomasks (binary and grayscale)
• Direct patterning on wafers (no mask needed)
• Grayscale lithography for microlenses, blazed gratings, DOEs
• Rapid prototyping of custom patterns
• Maskless lithography for low-volume or test devices
• Alignment mark definition or backside processing

Usage: Load substrate/mask, align (front/backside if needed), select write mode and parameters (resolution/speed), import pattern file (GDSII or similar), set exposure dose, run job. Unload after exposure and development check.

Detailed Specifications

• Model: Heidelberg DWL 66+
• Location: Metrology Bay
• Substrate/mask size: Min 5×5 mm, max 9"×9"
• Minimum feature size: 300 nm (high-resolution mode)
• Laser: 405 nm (h-line photoresists)
• Write modes: High resolution (0.3 µm), Mode IV (~2 µm), Mode V (~4 µm)
• Alignment: Manual, semi-automatic, fully automatic; front- and backside
• Features: Grayscale and advanced grayscale exposure, high flexibility for custom patterns, maskless operation
• Other: Ideal for mask making and direct-write research prototyping

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)

Recipes & Data

• Standard Resists / Doses: Common settings include:

 * AZ/SPR series (positive): Dose calibrated per mode (e.g., 50–200 mJ/cm² range)
 * SU-8 or similar for grayscale: Adjusted for 3D profiles
 * High-contrast resists for binary masks

• Process Control: Verify feature size and edge roughness via optical microscope or SEM. Check alignment accuracy for multi-level or backside patterns.
• Notes: Choose write mode based on resolution vs. write time trade-off. Use grayscale for 3D structures (microlenses, ramps). Proximity correction may be needed for dense patterns.

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