Oxford RIE
About
Films / Materials: This is an Oxford Instruments PlasmaPro 80 reactive ion etcher (RIE) optimized for etching dielectric materials such as SiO₂, Si₃N₄, and Si, with good anisotropy and control. It is primarily used for etching dielectrics in micro- and nanofabrication processes.
Hardware: Parallel-plate capacitively-coupled RF plasma system (13.56 MHz). Open-load design for fast loading/unloading of samples. No load lock; direct chamber access. Electrode/table temperature controlled at 20°C (ambient/chilled). Includes optical endpoint detection (Horiba Jobin Yvon LEM G50) for precise process stop.
Gases:
- Ar (argon – physical sputtering/milling component)
- O₂ (oxygen – for ashing, oxidation, or enhancing etch rates)
- CF₄ (tetrafluoromethane – fluorine-based etching of SiO₂/Si₃N₄)
- CHF₃ (trifluoromethane – for selective SiO₂ etching, polymer sidewall passivation)
- SF₆ (sulfur hexafluoride – high-rate isotropic/fluorine etching of Si/SiO₂)
Etch Properties:
- Primarily anisotropic etching of dielectrics via ion bombardment and chemical reactions.
- Suitable for shallow to moderate depth etches (avoid deep polymer etching >1 µm due to restrictions).
- High selectivity possible depending on gas mix and power (e.g., SiO₂ over Si with CHF₃/O₂).
- Excellent process control for uniformity across up to 200 mm substrates.
Applications: Etching of dielectric layers (e.g., oxide/nitride masks, passivation removal, via openings), resist descum, surface cleaning/activation. Not for exposed metals (except Cr) or deep polymer etches, may be used as a mask only.
Usage: Load sample directly (pieces to 200 mm wafers), select/load recipe, set time/power based on calibrated etch rates. Use endpoint detection for timed or auto-stop processes. Monitor particles and uniformity post-etch.
Detailed Specifications
- Model: PlasmaPro 80 reactive ion etcher
- Location: Etch Bay 1
- Substrate size: Up to 8(200 mm) wafers (pieces/smaller possible; open loading)
- RF Power: Table RF power (max) 300 W (13.56 MHz)
- Table temperature: 20°C (chilled/controlled)/ (max) 80°C
- Gases: CHF₃(max)100 sccm, Ar (max) 100 sccm, O₂(max) 50 sccm, CF₄ (max) 50 sccm, SF₆ (max) 100 sccm
- Features: Optical endpoint detection (Horiba Jobin Yvon LEM G50), open-load design for fast access, excellent etch uniformity and rate control
- Restrictions: No exposed metals (except Cr); no deep etching polymers (>1 µm) may be used as a mask only.
Documentation
- SOP
- OES SOP
- Laser Endpoint SOP
- Training video
- Training required – contact lab staff (Chandan Ramakrishnaiah)Request form
Recipes & Data
- Standard Recipes: Standard Recipe
- Process Control and Calibration Data: Standard Recipe Calibration