| Feature
|
Oxford RIE
|
Oxford DRIE
|
Oxford DRIE-ALE
|
Oxford III-V
|
XeF2 Etcher
|
| Model
|
PlasmaPro 80 RIE
|
Oxford System 100 DRIE
|
Oxford DRIE + ALE
|
PlasmaPro 100 Cobra
|
Custom built (Armani group)
|
| Location
|
Etch Bay 1
|
Etch Bay 1
|
Etch Bay 1
|
Etch Bay 1
|
Deposition Bay 1
|
| Substrate Size
|
Up to 200 mm (8")
|
Up to 4" clamp; 2", 3", 4", 6", 8" possible
|
TBD (commissioning)
|
Up to 4" clamp; 2", 3", 4", 6", 8" possible
|
Up to 6"
|
| Etch Type
|
RIE (capacitively coupled)
|
DRIE / Bosch (ICP)
|
DRIE + Atomic Layer Etch
|
ICP-RIE (cryo capable)
|
Isotropic chemical etch
|
| Table RF Power
|
300 W max
|
300 W max
|
TBD
|
1500 W max
|
N/A
|
| ICP Power
|
None (RIE only)
|
3000 W max
|
TBD
|
1500 W max
|
N/A
|
| Table Temperature
|
20°C
|
20°C
|
TBD
|
-120°C to 200°C
|
20°C
|
| Gases
|
Ar, O₂, CF₄, CHF₃, SF₆
|
Ar, O₂, CF₄, CHF₃, SF₆, C₄F₈
|
TBD
|
Ar, O₂, SF₆, CH₄, H₂, Cl₂, BCl₃, SiCl₄
|
XeF₂ (crystal source)
|
| Allowed Materials
|
Si, SiO₂, Si₃N₄, oxide/nitride masks, Cr
|
Si, SiO₂, SiN, Parylene, Polyimide, LiNbO₃, BCB
|
TBD
|
InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS₂, WSe, Graphene
|
Si only
|
| Disallowed
|
No metals except Cr; no deep polymer >1 µm
|
No exposed metals except Cr
|
TBD
|
No metals except Cr; no deep polymer >1 µm
|
None listed
|
| Endpoint Detection
|
✓ Optical (LEM G50)
|
✓ Optical
|
TBD
|
✓ Optical (LEM G50)
|
✗
|
| Best For
|
Dielectric etching, passivation removal, via openings, resist descum
|
Deep Si etching, high-aspect-ratio structures, Bosch process
|
Precise atomic-layer-level etch control
|
III-V semiconductors, exotic/compound materials, cryo etching
|
Fast isotropic Si etching, high selectivity
|
| Status
|
✓ Operational
|
✓ Operational
|
⚠ Being commissioned
|
✓ Operational
|
✓ Operational
|
| SOP
|
SOP
|
SOP
|
TBD
|
SOP
|
SOP
|