Aligner A (MJB3)

About

SUSS MJB3 Mask Aligner A in Advanced Photo Bay

Process: This is a manual contact mask aligner designed for precise UV photolithography on small pieces or substrates. It supports soft, hard, and vacuum contact modes for different resolution and gap requirements, and includes backside alignment capability for double-sided processing.

Hardware: 350 W mercury arc lamp with UV output in the 350–450 nm range (broadband UV). High-resolution optics with 10x eyepieces for alignment. Vacuum chuck for substrate and mask hold-down. Pneumatic controls for contact modes (soft contact for proximity, hard contact for higher resolution, vacuum contact for minimal gap). Backside alignment microscope for through-wafer or double-sided registration.

Key Features:

• Resolution: 0.8 µm (in hard/vacuum contact)
• Contact modes: Soft, Hard, Vacuum
• Exposure wavelength: UV 350–450 nm (broadband Hg arc)
• Lamp power: 350 W
• Backside alignment: Yes (for double-sided or through-wafer patterns)
• Substrate size: Pieces up to 3"
• Mask size: 3" and 4" masks

Applications:

• Double-sided lithography (front-to-back alignment)
• Small-piece or test-sample patterning
• Standard contact lithography for features down to ~0.8 µm
• Rapid prototyping and process development
• Alignment of patterns on transparent or thinned substrates

Usage: Load mask and substrate, align (front or backside), select contact mode (soft/hard/vacuum), set exposure time/dose, expose, unload. Use backside alignment for double-sided runs. Develop and inspect patterns post-exposure.

Detailed Specifications

• Model: SUSS MJB3 (Aligner A)
• Location: Advanced Photo Bay
• Substrate size: Pieces up to 3"
• Mask size: 3" and 4"
• Resolution: 0.8 µm (optimal in hard/vacuum contact)
• Exposure source: 350 W Hg arc lamp, UV 350–450 nm
• Contact modes: Soft, Hard, Vacuum
• Features: Backside alignment microscope, manual operation, reliable for small-scale research
• Other: Classic contact aligner for education, prototyping, and precise small-substrate lithography

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)

Recipes & Data

• Standard Resists / Doses: Common settings include:

 * AZ/SPR positive resists: 50–150 mJ/cm² (adjust per thickness and mode)
 * SU-8 negative: Higher dose for thick films (e.g., 200–400 mJ/cm²)
 * Thin resists for 0.8 µm features: Optimize in hard/vacuum contact

• Process Control: Verify alignment accuracy (front/back) via microscope or overlay test patterns. Check resolution and edge definition post-development.
• Notes: Use vacuum contact for best resolution. Backside alignment requires transparent substrates or alignment marks. Soft contact reduces mask wear but may limit resolution.

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