Aligner B (MJB3)

About

SUSS MJB3 Mask Aligner B in Photo Bay

Process: This is a manual contact mask aligner designed for precise UV photolithography on small pieces or substrates. It supports soft, hard, and vacuum contact modes for different resolution and gap requirements. (Note: Unlike Aligner A, this unit does not have backside alignment capability listed.)

Hardware: 350 W mercury arc lamp with UV output in the 350–450 nm range (broadband UV). High-resolution optics for alignment. Vacuum chuck for substrate and mask hold-down. Pneumatic controls for contact modes (soft contact for proximity/gentle handling, hard contact for higher resolution, vacuum contact for minimal gap).

Key Features:

• Resolution: 0.8 µm (in hard/vacuum contact)
• Contact modes: Soft, Hard, Vacuum
• Exposure wavelength: UV 350–450 nm (broadband Hg arc)
• Lamp power: 350 W
• Substrate size: Pieces up to 3"
• Mask size: 3" and 4"

Applications:

• Standard contact lithography for features down to ~0.8 µm
• Small-piece or test-sample patterning
• Rapid prototyping and process development
• Single-sided lithography on opaque or small substrates

Usage: Load mask and substrate, align (frontside only), select contact mode (soft/hard/vacuum), set exposure time/dose, expose, unload. Develop and inspect patterns post-exposure.

Detailed Specifications

• Model: SUSS MJB3 (Aligner B)
• Location: Photo Bay
• Substrate size: Pieces up to 3"
• Mask size: 3" and 4"
• Resolution: 0.8 µm (optimal in hard/vacuum contact)
• Exposure source: 350 W Hg arc lamp, UV 350–450 nm
• Contact modes: Soft, Hard, Vacuum
• Features: Manual operation, reliable for small-scale research and education
• Other: Classic contact aligner for single-sided lithography on small substrates

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)

Recipes & Data

• Standard Resists / Doses: Common settings include:

 * AZ/SPR positive resists: 50–150 mJ/cm² (adjust per thickness and mode)
 * SU-8 negative: Higher dose for thick films (e.g., 200–400 mJ/cm²)
 * Thin resists for 0.8 µm features: Optimize in hard/vacuum contact

• Process Control: Verify resolution and edge definition post-development. Check for mask contamination or defects.
• Notes: Use vacuum contact for best resolution. Soft contact reduces mask wear but may limit resolution. Clean mask after each use.

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