Aligner C (MJB4)
About
Process: This is a manual contact mask aligner designed for precise UV photolithography on small pieces or substrates. It offers high-magnification objectives for accurate alignment and supports standard contact modes, making it suitable for fine features on limited-size samples.
Hardware: 350 W mercury arc lamp with UV output in the 350–450 nm range (broadband UV). High-resolution optics including 10x eyepieces and objectives at 5x, 10x, and 20x for detailed alignment. Vacuum chuck for substrate and mask hold-down. Pneumatic controls for contact modes (soft, hard, vacuum – assumed standard for MJB4 series).
Key Features:
- Resolution: 0.8 µm (in hard/vacuum contact)
- Contact modes: Soft, Hard, Vacuum (standard for MJB series)
- Exposure wavelength: UV 350–450 nm (broadband Hg arc)
- Optics: Eyepieces 10x; objectives 5x, 10x, 20x
- Substrate size: Pieces up to 2"
- Mask size: 3", 4", and 5"
Applications:
- High-precision patterning on small pieces (e.g., test chips, prototypes)
- Fine-feature lithography down to ~0.8 µm
- Research and education on limited-size substrates
- Rapid process development with high-magnification alignment
Usage: Load mask and substrate, align using appropriate objective (5x/10x/20x), select contact mode, set exposure time/dose, expose, unload. Develop and inspect patterns post-exposure.
Detailed Specifications
- Model: SUSS MJB4 (Aligner C)
- Location: Photo Bay
- Substrate size: Pieces up to 2"
- Mask size: 3", 4", and 5"
- Resolution: 0.8 µm (optimal in hard/vacuum contact)
- Exposure source: 350 W Hg arc lamp, UV 350–450 nm
- Optics: Eyepieces 10x; objectives 5x, 10x, 20x
- Contact modes: Soft, Hard, Vacuum
- Features: High-magnification objectives for precise alignment, manual operation
- Other: Compact aligner optimized for small-substrate, high-resolution work
Documentation
- SOP – Standard Operating Procedure
- Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)
Recipes & Data
- Standard Resists / Doses: Common settings include:
* AZ/SPR positive resists: 50–150 mJ/cm² (adjust per thickness and mode) * SU-8 negative: Higher dose for thick films (e.g., 200–400 mJ/cm²) * Thin resists for 0.8 µm features: Optimize in hard/vacuum contact
- Process Control: Use 20x objective for critical alignment. Verify resolution and edge definition post-development.
- Notes: Smaller substrate size (up to 2") compared to MJB3 aligners. Use higher magnification objectives for sub-micron features. Clean mask after each use.
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