Aligner D (MA BA6 Gen4)
About
Process: This is an advanced mask aligner supporting both contact and proximity lithography with high-precision backside alignment. It uses modern LED exposure for uniform, energy-efficient UV illumination and digital camera objectives for accurate alignment, making it suitable for double-sided processing and higher-throughput small-batch runs.
Hardware: 450 W LED exposure source (UV400, 350–450 nm range) for stable, long-lifetime illumination. Digital camera system with 5x and 10x objectives for alignment. Automated or semi-automated alignment modes. Pneumatic controls for contact/proximity modes. High-resolution optics and stage for precise overlay.
Key Features:
- Resolution: 0.8 µm (in contact mode)
- Exposure wavelength: UV400 (350–450 nm) via 450 W LED
- Backside alignment: Yes (for double-sided or through-wafer patterns)
- Objectives: Digital camera with 5x and 10x
- Contact/proximity modes: Supported (soft/hard/vacuum contact + proximity)
- Substrate size: Flexible (pieces and wafers – confirm max size on tool; typically up to 6" or larger)
Applications:
- Double-sided lithography with precise front-to-back overlay
- High-resolution patterning on wafers or pieces
- Proximity lithography for reduced mask wear
- Advanced research requiring backside alignment (e.g., MEMS, photonics, sensors)
- Batch processing with improved uniformity from LED source
Usage: Load mask and substrate, align using digital camera (front or backside), select exposure mode and dose, expose, unload. Use proximity for non-contact runs or contact for highest resolution. Develop and inspect patterns post-exposure.
Detailed Specifications
- Model: SUSS MA/BA6 Gen4 (Aligner D)
- Location: Advanced Photo Bay
- Resolution: 0.8 µm (optimal in contact mode)
- Exposure source: 450 W LED, UV 350–450 nm
- Alignment: Backside alignment supported; digital camera objectives 5x and 10x
- Features: LED illumination for uniform exposure, modern digital alignment system, proximity and contact modes
- Other: Advanced version of SUSS aligners with improved light source and optics for research and prototyping
Documentation
- SOP – Standard Operating Procedure
- Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)
Recipes & Data
- Standard Resists / Doses: Common settings include:
* AZ/SPR positive resists: 40–120 mJ/cm² (adjust per thickness; LED source may differ slightly from Hg arc) * SU-8 negative: Higher dose for thick films (e.g., 150–350 mJ/cm²) * Thin resists for 0.8 µm features: Optimize in hard contact
- Process Control: Verify alignment accuracy (front/back) via microscope or overlay test patterns. Check resolution and uniformity post-development.
- Notes: LED source provides consistent intensity and longer lifetime than Hg lamps. Backside alignment requires transparent substrates or alignment marks. Proximity mode reduces mask contamination.
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