CHA Evaporator

About

CHA e-beam Evaporator in Deposition Bay 2

Process: This is a high-throughput electron-beam (e-beam) evaporator designed for depositing multiple metal films with excellent thickness control and uniformity. It supports batch processing of multiple wafers and is optimized for liftoff-compatible depositions, contact metallization, and multi-layer stacks.

Hardware: 10 kV e-beam gun with 6-pocket crucible turret (15cc each) for sequential deposition of different materials without venting. Motor-driven deposition shield for precise source shuttering. Sweep controller for e-beam scanning. 8 kW substrate heater array for elevated-temperature deposition. Substrate rotation and planetary dome fixturing for high uniformity. Inficon IC/6 deposition controller for real-time quartz crystal monitoring and automatic endpoint control. Load lock not mentioned (direct load assumed; confirm).

Gases:

• None standard (high-vacuum thermal evaporation; no process gases required)
• Optional Ar backfill or purge if equipped (not listed; typically inert vacuum only)

Film Properties:

• High-purity metals with good adhesion and low resistivity
• Directional evaporation (line-of-sight) – excellent for liftoff processes
• Uniformity enhanced by rotation and planetary dome geometry
• Thickness control via Inficon IC/6 quartz crystal monitor

Applications:

• Multi-layer metal stacks (e.g., Ti/Au, Cr/Au, Ti/Pt/Au)
• Contact pads and interconnects
• Liftoff metallization
• Schottky/ohmic contacts
• Electrodes for devices (MEMS, sensors, photonics)
• Batch processing of 100 mm wafers (up to 22 per run in dome)

Usage: Load wafers into dome fixturing (up to 22×100mm or fewer larger), pump down, select pocket/material, set sweep/power/rate, run deposition with rotation/heating as needed. Use Inficon controller for thickness endpoint. Unload after cool-down.

Detailed Specifications

• Model: CHA e-beam evaporator
• Location: Deposition bay 2
• Substrate size: Up to 6" wafers; dome supports twenty-two 100 mm back-loaded wafers
• Crucibles: 6 pockets @ 15cc each
• E-beam: 10 kV gun
• Deposition features:

 * Sweep controller
 * Motor-driven deposition shield
 * 8 kW heater array
 * Lift-off fixturing
 * Substrate rotation
 * Planetary dome for batch uniformity
 * Inficon IC/6 for thickness/rate control

• Materials: Ti, Au, Pt, Pd, Cr, Ni, Ag
• Other: High-capacity batch processing, excellent uniformity on multiple substrates, quartz crystal endpoint detection

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Joey)

Recipes & Data

• Standard Processes: Common depositions include:

 * Ti adhesion layer: 20–50 nm
 * Au conductor: 100–1000 nm
 * Cr/Au stacks for liftoff
 * Pt or Pd for Schottky contacts

• Process Control: Calibrate rates via Inficon IC/6 and post-dep thickness measurement (e.g., Dektak profilometer). Check uniformity across dome-loaded wafers.
• Notes: Use liftoff fixturing for angled or directional deposition. Avoid cross-contamination between pockets; clean crucibles as needed.

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