Filmetrics F20
About
Process: This is a reflectometry-based thin film measurement tool that uses visible/near-IR light reflection to determine film thickness quickly and non-destructively. It provides spot measurements or small-area maps, ideal for routine process monitoring and thickness verification after deposition or etch.
Hardware: Broadband light source with fiber-optic probe for normal-incidence reflection. Spectrometer for spectral analysis (typically 400–1000 nm range). Filmetrics software for real-time thickness calculation using optical models (e.g., Cauchy, Sellmeier). Manual or semi-automated stage for sample positioning.
Key Features:
- Measurement type: Spectral reflectometry (non-contact, optical)
- Thickness range: Typically 10 nm to several µm (depending on film/substrate)
- Spot size: Small (e.g., ~1 mm or less – confirm on tool)
- Speed: Fast single-point measurements (seconds per spot)
- Data output: Thickness, refractive index (if modeled), uniformity if multiple points taken
Applications:
- Thickness verification of deposited films (PECVD SiO₂/Si₃N₄, ALD Al₂O₃/HfO₂, sputtered ITO, etc.)
- Post-lithography resist thickness check
- Process control and calibration for deposition tools
- Quick mapping of uniformity on small samples or test wafers
- Cross-check with ellipsometer or Dektak for validation
Usage: Place sample on stage (flat, clean surface), focus probe, select measurement spot(s), run scan, fit optical model to reflection spectrum, record thickness. Take multiple points for average/uniformity. Export data or save reports.
Detailed Specifications
- Model: Filmetrics F20
- Location: Photo Bay
- Measurement: Thin film thickness (non-contact reflectometry)
- Wavelength range: Visible/near-IR (typically 400–1000 nm – confirm on tool)
- Features: Fast, user-friendly software, spot measurements, basic mapping capability
- Restrictions: Requires reflective substrate (e.g., Si) or known optical properties; less accurate for very thick (>10 µm) or highly absorbing films
- Other: Simple, rapid metrology tool for daily thin-film process monitoring
Documentation
- SOP – Standard Operating Procedure
- Training required – contact lab staff (Chandan Ramakrishnaiah or Shivakumar Bhaskaran)
Recipes & Data
- Standard Measurements: Common setups include:
* PECVD SiO₂ on Si: 100–2000 nm via Cauchy model * ALD Al₂O₃ or HfO₂: 5–100 nm with high-k dispersion models * Photoresist: 0.5–5 µm on Si * ITO or metals: Thickness if semi-transparent
- Process Control: Take 5–9 points across wafer for uniformity. Compare with ellipsometer (multi-wavelength) or Dektak (step height) for cross-validation.
- Notes: Clean sample surface (no particles/oils). Use appropriate model (Cauchy for transparent dielectrics, tabulated n/k for complex films). Calibrate system periodically with known standards.
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