KJL Sputter

About

Kurt J. Lesker (KJL) Sputter system in Deposition Bay 1

Process: This is a multi-source magnetron sputtering system for depositing thin films of metals, dielectrics, and transparent conductors via DC (direct current) and RF (radio frequency) sputtering. It supports reactive sputtering (e.g., with O₂) and is suitable for conformal coatings, barrier layers, electrodes, and optical films.

Hardware: 5 sputter guns: 4 DC and 1 RF/DC-capable, each with 2" diameter targets. Substrate rotation for improved film uniformity. Quartz crystal thickness monitor for real-time rate and endpoint control. Load lock not mentioned (direct load assumed; confirm if present). Separate power supplies for DC (up to 500 W) and RF (up to 300 W).

Gases:

• Ar (argon – primary sputtering gas for physical sputtering)
• O₂ (oxygen – for reactive sputtering of oxides like SiO₂, Al₂O₃, ITO)

Film Properties:

• Good adhesion and density for metals (e.g., Au, Pt, Ti)
• Conformal coverage better than evaporation on moderate topography
• Tunable stress and resistivity via power, pressure, and gas ratios
• Reactive oxides (e.g., ITO for transparent conductors) with controlled stoichiometry

Applications:

• Metal electrodes and interconnects
• Barrier/adhesion layers (Ti, W, Mo)
• Transparent conductive oxides (ITO)
• Dielectric passivation or optical coatings (SiO₂, Al₂O₃)
• Reactive sputtering for compound films
• Research prototyping of thin-film devices

Usage: Load sample (up to 6" wafer or pieces), pump down, select gun/target, set power/gas flow/pressure, ignite plasma, run deposition with rotation enabled. Monitor thickness via quartz crystal. Cool down before venting.

Detailed Specifications

• Model: Kurt J. Lesker (KJL) sputter system
• Location: Deposition bay 1
• Substrate size: Up to 6" wafers (pieces/smaller supported)
• Sputter sources: 5 guns (4 DC, 1 RF/DC)
• Target size: 2" diameter
• Power:

 * DC sputter: up to 500 W
 * RF sputter: up to 300 W

• Deposition features:

 * Substrate rotation
 * Quartz crystal thickness/rate monitor
 * Magnetron sputtering for high-rate deposition

• Materials: Au, Pt, Ti, Al, W, Mo, Cu, SiO₂, Al₂O₃, ITO (other materials available upon request)
• Gases: Ar, O₂
• Other: Versatile for both conductive and insulating films, good uniformity with rotation, suitable for multi-user research environment

Documentation

• SOP – Standard Operating Procedure
• Training required – contact lab staff (Joey)

Recipes & Data

• Standard Processes: Common depositions include:

 * Au or Pt electrodes: DC sputtering, 100–500 nm
 * Ti adhesion/barrier layers: DC, 20–100 nm
 * ITO transparent conductors: RF reactive sputtering with Ar/O₂
 * SiO₂ or Al₂O₃ dielectrics: RF reactive sputtering

• Process Control: Calibrate deposition rates via quartz crystal monitor and verify post-dep thickness/uniformity (e.g., Dektak profilometer or ellipsometer). Check film resistivity (4-point probe) and stress if needed.
• Notes: Use rotation for best uniformity. For reactive sputtering, adjust O₂ flow for desired stoichiometry. Clean targets regularly to avoid arcing/contamination.

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