Oxford DRIE-ALE
About
Status: Being Commissioned This is a new/dual-capability tool combining deep reactive ion etching (DRIE) and atomic layer etching (ALE) on the same platform. It is currently in the commissioning phase and not yet available for general user processing. Once fully qualified, it will provide both high-aspect-ratio Bosch etching and ultra-precise, isotropic/anisotropic atomic-scale etching.
Planned Capabilities (based on Oxford Instruments PlasmaPro series): - DRIE mode: Likely similar to the existing Oxford DRIE (Bosch process for deep Si etching with SF₆/C₄F₈ cycles) - ALE mode: Atomic layer etching for controlled removal of materials at ~1 nm/cycle precision (e.g., Si, SiO₂, metals, or III-Vs via sequential plasma/chemical steps) - Hybrid processes: Potential for combined DRIE + ALE recipes (e.g., deep etch followed by smoothening or precise trimming)
Expected Hardware: - Inductively Coupled Plasma (ICP) source - Temperature-controlled electrode (likely cryo or variable temp capability for ALE) - Load lock (similar to existing Oxford tools) - Advanced endpoint detection and gas delivery for ALE precursors
Expected Gases / Precursors: - DRIE: Likely Ar, O₂, CF₄, CHF₃, SF₆, C₄F₈ (same as Oxford DRIE) - ALE: Possibly Cl₂, BCl₃, Ar, O₂, or specialized chemistries depending on material (to be confirmed)
Anticipated Applications (once commissioned): - Ultra-precise feature size control in advanced MEMS/photonics - Atomic-scale smoothing of Bosch-scalloped sidewalls - Controlled etching of 2D materials, III-Vs, or high-k dielectrics - High-aspect-ratio structures with sub-nm precision - Research in next-generation devices requiring Å-level etch control
Current Usage: The tool is **not yet available for user runs**. Commissioning is in progress. Do not attempt to use it. Monitor lab announcements or contact staff for updates on qualification, training, and availability. In the meantime, use the existing Oxford DRIE for deep Si etching needs.
Detailed Specifications
- Model: Oxford DRIE-ALE (dual-mode system, likely PlasmaPro series)
- Location: Etch bay 1
- Status: Being commissioned (not available for processing as of latest update)
- Substrate size: Expected similar to Oxford DRIE (4" clamp standard; pieces on carriers; 2–8" possible)
- Other: Detailed specs (power, gases, temp range, ALE cycle times) to be added upon completion of commissioning
- Restrictions: Not yet defined – follow lab updates
Documentation
- No SOP or quickstart available yet (commissioning phase)
- Check lab resources for future updates (likely similar format to Oxford DRIE documentation)
- Training: Not yet offered – contact lab staff for commissioning progress and future training schedule
- Contact: Joey for status inquiries
Recipes & Data
- No active recipes or data yet (tool under commissioning)
- Anticipated: Bosch DRIE recipes similar to existing Oxford DRIE; ALE cycles for atomic-precision etching (e.g., Si, SiO₂, or metal ALE)
- Once commissioned, refer to updated recipes spreadsheet or internal logs
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