Oxford PECVD

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About

Oxford PlasmaPro System 100 PECVD tool in Deposition Bay 1

Films: This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate.

Hardware: Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: 240 mm. Substrate heater up to 400°C.

Gases:

  • 2% SiH₄ in N₂ (silicon precursor, diluted for safety)
  • NH₃ (ammonia – nitrogen precursor for nitrides)
  • N₂O (nitrous oxide – oxygen precursor for oxides)
  • N₂ (purge/carrier gas)
  • He (carrier/diluent)
  • CF₄ (chamber cleaning/etching)

Film Properties:

  • SiO₂: Deposited using 2% SiH₄/N₂ + N₂O at ~300–400°C; typical rates ~few hundred Å/min depending on recipe.
  • Si₃N₄: Deposited using 2% SiH₄/N₂ + NH₃; denser films at higher temperatures; stress tunable via gas ratios/RF power.
  • SiOₓNᵧ: Tunable oxynitrides by adjusting N₂O/NH₃ ratios.

Films suitable for passivation, masks, insulators, AR coatings, etc.

Applications: Dielectric passivation, etch masks, electrical isolation, optical coatings, capacitor dielectrics. Fully programmable via computer interface.

Usage: Select/load recipes; input deposition time based on calibrated rates. Check current rates and uniformity via process control data or test runs.

Detailed Specifications

  • Model: PlasmaPro System 100 PECVD
  • Location: Deposition bay 1
  • Substrate size: Up to 6" wafers (pieces/smaller possible)
  • Electrode: 240 mm diameter, heated up to 400°C
  • Plasma: RF 300 W (13.56 MHz), LF 500 W
  • Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added)
  • Base pressure: Low mTorr range (high vacuum capability)
  • Gases: 2% SiH₄/N₂, NH₃, N₂O, N₂, He, CF₄
  • Other: Excellent film uniformity, stress/refractive index control, in-situ cleaning possible

Documentation

Recipes & Data

  • Standard Recipes: Check related recipes or internal process logs for calibrated PECVD processes.
  • Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs.
  • Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols.

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