RTA (Rapid Thermal Annealer)

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About

Allwin AW-610 Rapid Thermal Annealer in Deposition Bay 1

Process: This is a rapid thermal annealer (RTA) designed for fast, controlled heating and cooling of substrates in a controlled atmosphere. It enables short-duration high-temperature processes (seconds to minutes) while minimizing diffusion, dopant redistribution, or thermal budget issues common in conventional furnaces.

Hardware: Lamp-based heating with multiple halogen lamps for rapid ramp-up. Pyrometer-based temperature measurement (ERP pyrometer: 400–1200°C) and thermocouple option (up to 800°C) for lower temperatures. Programmable ramp rates up to 125°C/s. Substrate support for various sizes with good uniformity.

Gases:

  • Forming gas (5–15% H₂ in N₂– for annealing in reducing atmosphere, e.g., metal sintering or oxide repair)

Applications:

  • Implant activation / dopant activation
  • Silicide formation
  • Contact alloying
  • Gate dielectric anneal
  • Metal sintering
  • Crystallization / phase change
  • Stress relaxation

Usage: Load sample (small pieces to 6" wafer), select recipe or program ramp/hold/cool profile, set gas flow, run process. Temperature monitored via pyrometer (high-temp) or thermocouple (low-temp). Ensure proper gas purging before/after run.

Detailed Specifications

  • Model: Allwin AccuThermo AW610
  • Location: Deposition bay 1
  • Substrate size: Small pieces, 2", 3", 4", 5", 6" wafers
  • Temperature range:
 * Recommended steady state: 150–1150°C
 * ERP Pyrometer: 400–1200°C (±1°C accuracy, when calibrated against an instrumented thermocouple wafer)
 * Thermocouple: up to 800°C (±0.5°C accuracy)
  • Ramp rate: Programmable, up to 125°C per second (temperature-and-radiation-dependent)
  • Temperature repeatability: ±0.5°C or better at 1150°C (wafer-to-wafer, based on a 100-wafer set)
  • Temperature uniformity: ±5°C across a 6" (150 mm) wafer at 1150°C (one sigma deviation for 100 angstrom oxide; for titanium silicide, no more than 4% increase in non-uniformity during first anneal at 650–700°C)
  • Gases: Any inert and/or non-toxic gases (up to four) with appropriate mass flow controllers (e.g., N₂, He, forming gas); not designed for hazardous gases
  • Features: Programmable recipes, fast ramp/cool, dual temperature sensing (pyrometer + thermocouple), good uniformity for production-like results in research environment

Documentation

Recipes & Data

  • Standard Recipes: Check internal process logs for common anneals (e.g., forming gas anneal at 400–500°C, rapid thermal oxidation).
  • Process Control: Verify temperature uniformity and repeatability via test runs or thermocouple calibration.
  • Notes: Use forming gas (5–15% H₂ in N₂ ) for reducing atmospheres.

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