YES O2 Plasma
About
Process: This is a high-power oxygen plasma system designed for efficient photoresist ashing, descumming, organic residue removal, and surface activation. It combines elevated temperature (up to 250°C) with high RF power for faster processing and better control over ashing rates and surface chemistry.
Hardware: Parallel-plate RF plasma configuration with table-powered electrode (1000 W max RF). Heated substrate platen for thermal enhancement of ashing and outgassing. O₂ gas delivery with precise flow control. Chamber designed for cleanroom use with low particle generation. Suitable for 200 mm wafers and pieces.
Gases:
- O₂ (oxygen – primary plasma gas for ashing, oxidation, and surface functionalization)
Process Properties:
- High-rate O₂ plasma ashing (accelerated by heat and high power)
- Effective descum after lithography (removal of thin resist residues)
- Surface activation (increases hydrophilicity and adhesion for coatings/deposition)
- Reduced process time compared to room-temperature ashers
- Low damage to most substrates when optimized
Applications:
- Photoresist strip and descum in lithography workflows
- Organic residue cleaning before deposition or bonding
- Surface preparation for improved wettability/adhesion
- Activation of substrates (e.g., Si, glass, polymers) for subsequent processing
- Gentle ashing of sensitive materials with controlled heat/power
Usage: Load sample (up to 200 mm wafer/piece), set temperature (up to 250°C), pump down, set O₂ flow/power/time, ignite plasma, run process. Use timer or endpoint if available. Cool down before venting. Follow quickstart for safe operation.
Detailed Specifications
- Model: Yield Engineering System YES-CV200RFS
- Location: Advanced Photo Bay
- Substrate size: Up to 200 mm wafers or pieces
- Gas: O₂ only
- RF Power: Table RF power up to 1000 W
- Temperature: Substrate heating up to 250°C
- Features: High-power RF for fast ashing, heated platen for enhanced rate and uniformity, cleanroom-compatible design
- Restrictions: O₂ plasma only – no fluorine/chlorine gases; avoid materials highly reactive to oxygen radicals or high temperature
- Other: Versatile for both ashing and surface treatment in photo and deposition workflows
Documentation
- Quickstart Guide
- Training required – contact lab staff (Joey)
Recipes & Data
- Standard Processes: Typical O₂ plasma runs include:
* Photoresist descum: 200–500 W, 100–200°C, 30–180 s * Full resist strip: 500–1000 W, 150–250°C, 5–20 min (depending on thickness) * Surface activation: Low power/short time (e.g., 100–300 W, 1–5 min) at 100–200°C
- Process Control: Check ash completeness visually or via microscope. Monitor for residue, over-ashing, or thermal damage. Perform particle scans post-process if needed.
- Notes: Higher temperature/power accelerates ashing but may affect sensitive substrates. Use lowest effective settings for graphene/CNT or delicate organics.
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