Oxford PECVD: Difference between revisions
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'''Films:''' This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate. | '''Films:''' This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate. | ||
'''Hardware:''' Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: 240 mm. Substrate heater up to 400°C. | '''Hardware:''' Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: '''240 mm.''' Substrate heater up to 400°C. | ||
'''Gases:''' | '''Gases:''' | ||
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* Model: PlasmaPro System 100 PECVD | * Model: PlasmaPro System 100 PECVD | ||
* Location: Deposition bay 1 | * Location: Deposition bay 1 | ||
* Substrate size: Up to 6" wafers (pieces/smaller possible) | * Substrate size: Up to '''6" wafers''' (pieces/smaller possible) | ||
* Electrode: 240 mm diameter, heated up to 400°C | * Electrode: '''240 mm diameter''', heated up to 400°C | ||
* Plasma: RF 300 W (13.56 MHz), LF 500 W | * Plasma: RF 300 W (13.56 MHz), LF 500 W | ||
* Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added) | * Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added) | ||
| Line 59: | Line 46: | ||
* Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs. | * Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs. | ||
* Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols. | * Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols. | ||
[[Template:Under review]] This article was generated with assistance from a large language model (LLM) and is currently under human review and editing. Content may contain inaccuracies, unverified claims, or other issues. Please help improve it. | |||
Latest revision as of 13:18, 10 February 2026
About
Films: This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate.
Hardware: Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: 240 mm. Substrate heater up to 400°C.
Gases:
- 2% SiH₄ in N₂ (silicon precursor, diluted for safety)
- NH₃ (ammonia – nitrogen precursor for nitrides)
- N₂O (nitrous oxide – oxygen precursor for oxides)
- N₂ (purge/carrier gas)
- He (carrier/diluent)
- CF₄ (chamber cleaning/etching)
Film Properties:
- SiO₂: Deposited using 2% SiH₄/N₂ + N₂O at ~300–400°C; typical rates ~few hundred Å/min depending on recipe.
- Si₃N₄: Deposited using 2% SiH₄/N₂ + NH₃; denser films at higher temperatures; stress tunable via gas ratios/RF power.
- SiOₓNᵧ: Tunable oxynitrides by adjusting N₂O/NH₃ ratios.
Films suitable for passivation, masks, insulators, AR coatings, etc.
Applications: Dielectric passivation, etch masks, electrical isolation, optical coatings, capacitor dielectrics. Fully programmable via computer interface.
Usage: Select/load recipes; input deposition time based on calibrated rates. Check current rates and uniformity via process control data or test runs.
Detailed Specifications
- Model: PlasmaPro System 100 PECVD
- Location: Deposition bay 1
- Substrate size: Up to 6" wafers (pieces/smaller possible)
- Electrode: 240 mm diameter, heated up to 400°C
- Plasma: RF 300 W (13.56 MHz), LF 500 W
- Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added)
- Base pressure: Low mTorr range (high vacuum capability)
- Gases: 2% SiH₄/N₂, NH₃, N₂O, N₂, He, CF₄
- Other: Excellent film uniformity, stress/refractive index control, in-situ cleaning possible
Documentation
- SOP – Standard Operating Procedure
- Operating Instructions (PDF)
- Training required – contact lab staff
Recipes & Data
- Standard Recipes: Check related recipes or internal process logs for calibrated PECVD processes.
- Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs.
- Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols.
Template:Under review This article was generated with assistance from a large language model (LLM) and is currently under human review and editing. Content may contain inaccuracies, unverified claims, or other issues. Please help improve it.