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Created page with "__NOTOC__ = Oxford PECVD = == Overview == Location: Deposition bay 1<br> Model: PlasmaPro System 100<br> Substrate size: up to 6" wafer<br> == SOP == * SOP == Images == thumb|300px|Oxford PECVD" |
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{{tool2|{{PAGENAME}} | |||
|picture=PECVD.jpg | |||
|type = Vacuum Deposition | |||
|super = Michael Barreraz <!-- Update if different for USC --> | |||
|super2 = Don Freeborn <!-- Update if different for USC --> | |||
|phone = (805)839-7975 <!-- Update USC contact phone if available --> | |||
|location = Deposition bay 1 | |||
|email = dfreeborn@usc.edu <!-- Update to actual USC email --> | |||
|description = Oxford PlasmaPro 100 PECVD for SiO₂, Si₃N₄, SiOₓNᵧ dielectric films | |||
|manufacturer = Oxford Instruments | |||
|materials = SiO₂, Si₃N₄, SiOₓNᵧ | |||
|toolid = <!-- Add your internal tool ID if you have one, e.g. 16 or leave blank --> | |||
}} | |||
__TOC__ | |||
= Oxford PECVD | == About == | ||
[[File:PECVD.jpg|thumb|300px|Oxford PlasmaPro System 100 PECVD tool in Deposition Bay 1]] | |||
'''Films:''' This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate. | |||
'''Hardware:''' Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: 240 mm. Substrate heater up to 400°C. | |||
== | '''Gases:''' | ||
[[File:PECVD. | * 2% SiH₄ in N₂ (silicon precursor, diluted for safety) | ||
* NH₃ (ammonia – nitrogen precursor for nitrides) | |||
* N₂O (nitrous oxide – oxygen precursor for oxides) | |||
* N₂ (purge/carrier gas) | |||
* He (carrier/diluent) | |||
* CF₄ (chamber cleaning/etching) | |||
'''Film Properties:''' | |||
* SiO₂: Deposited using 2% SiH₄/N₂ + N₂O at ~300–400°C; typical rates ~few hundred Å/min depending on recipe. | |||
* Si₃N₄: Deposited using 2% SiH₄/N₂ + NH₃; denser films at higher temperatures; stress tunable via gas ratios/RF power. | |||
* SiOₓNᵧ: Tunable oxynitrides by adjusting N₂O/NH₃ ratios. | |||
Films suitable for passivation, masks, insulators, AR coatings, etc. | |||
'''Applications:''' Dielectric passivation, etch masks, electrical isolation, optical coatings, capacitor dielectrics. Fully programmable via computer interface. | |||
'''Usage:''' Select/load recipes; input deposition time based on calibrated rates. Check current rates and uniformity via process control data or test runs. | |||
== Detailed Specifications == | |||
* Model: PlasmaPro System 100 PECVD | |||
* Location: Deposition bay 1 | |||
* Substrate size: Up to 6" wafers (pieces/smaller possible) | |||
* Electrode: 240 mm diameter, heated up to 400°C | |||
* Plasma: RF 300 W (13.56 MHz), LF 500 W | |||
* Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added) | |||
* Base pressure: Low mTorr range (high vacuum capability) | |||
* Gases: 2% SiH₄/N₂, NH₃, N₂O, N₂, He, CF₄ | |||
* Other: Excellent film uniformity, stress/refractive index control, in-situ cleaning possible | |||
== Documentation == | |||
* [[:File:PECVD SOP v1.pdf|SOP – Standard Operating Procedure]] | |||
* [https://wiki.nanofab.usc.edu/images/e/ef/PECVD_SOP_v1.pdf Operating Instructions (PDF)] <!-- Adjust URL if needed --> | |||
* Training required – contact lab staff | |||
== Recipes & Data == | |||
* Standard Recipes: Check [[Dry etching recipes|related recipes]] or internal process logs for calibrated PECVD processes. | |||
* Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs. | |||
* Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols. | |||
<!-- Optional: Add more images here if you have wafer maps, chamber views, etc. --> | |||
Revision as of 14:00, 2 February 2026
About
Films: This is an Oxford Instruments PlasmaPro System 100 plasma enhanced chemical vapor deposition (PECVD) tool optimized for depositing high-quality SiO₂, Si₃N₄, or SiOₓNᵧ dielectric films with excellent uniformity and control over properties like refractive index, stress, and etch rate.
Hardware: Capacitively-coupled parallel-plate RF plasma system (13.56 MHz primary RF + low-frequency option). Gas is delivered via a showerhead over a heated electrode. Load lock for wafer transfer. No wafer clamping; fixed electrode height. Electrode diameter: 240 mm. Substrate heater up to 400°C.
Gases:
- 2% SiH₄ in N₂ (silicon precursor, diluted for safety)
- NH₃ (ammonia – nitrogen precursor for nitrides)
- N₂O (nitrous oxide – oxygen precursor for oxides)
- N₂ (purge/carrier gas)
- He (carrier/diluent)
- CF₄ (chamber cleaning/etching)
Film Properties:
- SiO₂: Deposited using 2% SiH₄/N₂ + N₂O at ~300–400°C; typical rates ~few hundred Å/min depending on recipe.
- Si₃N₄: Deposited using 2% SiH₄/N₂ + NH₃; denser films at higher temperatures; stress tunable via gas ratios/RF power.
- SiOₓNᵧ: Tunable oxynitrides by adjusting N₂O/NH₃ ratios.
Films suitable for passivation, masks, insulators, AR coatings, etc.
Applications: Dielectric passivation, etch masks, electrical isolation, optical coatings, capacitor dielectrics. Fully programmable via computer interface.
Usage: Select/load recipes; input deposition time based on calibrated rates. Check current rates and uniformity via process control data or test runs.
Detailed Specifications
- Model: PlasmaPro System 100 PECVD
- Location: Deposition bay 1
- Substrate size: Up to 6" wafers (pieces/smaller possible)
- Electrode: 240 mm diameter, heated up to 400°C
- Plasma: RF 300 W (13.56 MHz), LF 500 W
- Features: Load lock, no clamping (fixed height), substrate rotation not standard (confirm if added)
- Base pressure: Low mTorr range (high vacuum capability)
- Gases: 2% SiH₄/N₂, NH₃, N₂O, N₂, He, CF₄
- Other: Excellent film uniformity, stress/refractive index control, in-situ cleaning possible
Documentation
- SOP – Standard Operating Procedure
- Operating Instructions (PDF)
- Training required – contact lab staff
Recipes & Data
- Standard Recipes: Check related recipes or internal process logs for calibrated PECVD processes.
- Process Control: Monitor deposition rates, uniformity (e.g. via Filmetrics F20 or ellipsometer), and particles after runs.
- Example uniformity/particle data: Perform DepCals and particle scans as per lab protocols.