Etcher Comparison

Feature	RIE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|RIE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford RIE{{#ifeq:{{{1}}}|RIE| ★|}}	DRIE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|DRIE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford DRIE{{#ifeq:{{{1}}}|DRIE| ★|}}	DRIEALE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|DRIEALE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford DRIE-ALE{{#ifeq:{{{1}}}|DRIEALE| ★|}}	IIIV|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|IIIV|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford III-V{{#ifeq:{{{1}}}|IIIV| ★|}}	XeF2|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|XeF2|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | XeF2 Etcher{{#ifeq:{{{1}}}|XeF2| ★|}}
Model	RIE|#FFF5CC|#ffffff}};" | PlasmaPro 80 RIE	DRIE|#FFF5CC|#ffffff}};" | Oxford System 100 DRIE	DRIEALE|#FFF5CC|#ffffff}};" | Oxford DRIE + ALE	IIIV|#FFF5CC|#ffffff}};" | PlasmaPro 100 Cobra	XeF2|#FFF5CC|#ffffff}};" | Custom built (Armani group)
Location	RIE|#FFF5CC|#ffffff}};" | Etch Bay 1	DRIE|#FFF5CC|#ffffff}};" | Etch Bay 1	DRIEALE|#FFF5CC|#ffffff}};" | Etch Bay 1	IIIV|#FFF5CC|#ffffff}};" | Etch Bay 1	XeF2|#FFF5CC|#ffffff}};" | Deposition Bay 1
Substrate Size	RIE|#FFF5CC|#ffffff}};" | Up to 200 mm (8")	DRIE|#FFF5CC|#ffffff}};" | Up to 4" clamp; 2", 3", 4", 6", 8" possible	DRIEALE|#FFF5CC|#ffffff}};" | TBD (commissioning)	IIIV|#FFF5CC|#ffffff}};" | Up to 4" clamp; 2", 3", 4", 6", 8" possible	XeF2|#FFF5CC|#ffffff}};" | Up to 6"
Etch Type	RIE|#FFF5CC|#ffffff}};" | RIE (capacitively coupled)	DRIE|#FFF5CC|#ffffff}};" | DRIE / Bosch (ICP)	DRIEALE|#FFF5CC|#ffffff}};" | DRIE + Atomic Layer Etch	IIIV|#FFF5CC|#ffffff}};" | ICP-RIE (cryo capable)	XeF2|#FFF5CC|#ffffff}};" | Isotropic chemical etch
Table RF Power	RIE|#FFF5CC|#ffffff}};" | 300 W max	DRIE|#FFF5CC|#ffffff}};" | 300 W max	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | 1500 W max	XeF2|#FFF5CC|#ffffff}};" | N/A
ICP Power	RIE|#FFF5CC|#ffffff}};" | None (RIE only)	DRIE|#FFF5CC|#ffffff}};" | 3000 W max	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | 1500 W max	XeF2|#FFF5CC|#ffffff}};" | N/A
Table Temperature	RIE|#FFF5CC|#ffffff}};" | 20°C	DRIE|#FFF5CC|#ffffff}};" | 20°C	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | -120°C to 200°C	XeF2|#FFF5CC|#ffffff}};" | 20°C
Gases	RIE|#FFF5CC|#ffffff}};" | Ar, O₂, CF₄, CHF₃, SF₆	DRIE|#FFF5CC|#ffffff}};" | Ar, O₂, CF₄, CHF₃, SF₆, C₄F₈	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | Ar, O₂, SF₆, CH₄, H₂, Cl₂, BCl₃, SiCl₄	XeF2|#FFF5CC|#ffffff}};" | XeF₂ (crystal source)
Allowed Materials	RIE|#FFF5CC|#ffffff}};" | Si, SiO₂, Si₃N₄, oxide/nitride masks, Cr	DRIE|#FFF5CC|#ffffff}};" | Si, SiO₂, SiN, Parylene, Polyimide, LiNbO₃, BCB	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS₂, WSe, Graphene	XeF2|#FFF5CC|#ffffff}};" | Si only
Disallowed	RIE|#FFF5CC|#ffffff}};" | No metals except Cr; no deep polymer >1 µm	DRIE|#FFF5CC|#ffffff}};" | No exposed metals except Cr	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | No metals except Cr; no deep polymer >1 µm	XeF2|#FFF5CC|#ffffff}};" | None listed
Endpoint Detection	RIE|#FFF5CC|#ffffff}};" | ✓ Optical (LEM G50)	DRIE|#FFF5CC|#ffffff}};" | ✓ Optical	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | ✓ Optical (LEM G50)	XeF2|#FFF5CC|#ffffff}};" | ✗
Best For	RIE|#FFF5CC|#ffffff}};" | Dielectric etching, passivation removal, via openings, resist descum	DRIE|#FFF5CC|#ffffff}};" | Deep Si etching, high-aspect-ratio structures, Bosch process	DRIEALE|#FFF5CC|#ffffff}};" | Precise atomic-layer-level etch control	IIIV|#FFF5CC|#ffffff}};" | III-V semiconductors, exotic/compound materials, cryo etching	XeF2|#FFF5CC|#ffffff}};" | Fast isotropic Si etching, high selectivity
Status	RIE|#FFF5CC|#ffffff}};" | ✓ Operational	DRIE|#FFF5CC|#ffffff}};" | ✓ Operational	DRIEALE|#FFF5CC|#ffffff}};" | ⚠ Being commissioned	IIIV|#FFF5CC|#ffffff}};" | ✓ Operational	XeF2|#FFF5CC|#ffffff}};" | ✓ Operational
SOP	RIE|#FFF5CC|#ffffff}};" | SOP	DRIE|#FFF5CC|#ffffff}};" | SOP	DRIEALE|#FFF5CC|#ffffff}};" | TBD	IIIV|#FFF5CC|#ffffff}};" | SOP	XeF2|#FFF5CC|#ffffff}};" | SOP