Tool list: Difference between revisions

From USC Nanofab Wiki
Jump to navigation Jump to search
Line 519: Line 519:
* Electron or optical imaging modes
* Electron or optical imaging modes
* Sample Size – up to 32mm  
* Sample Size – up to 32mm  
|[[:File:Phenom SEM operation procedures.pdf|Operation manual]]
|[[:File:SEM-033 Philips XL30.pdf|SOP]]
[[:File:Phenom SEM operation procedures.pdf|Operation manual]]
|-
|-
|Nikon LV 150 optical microscope
|Nikon LV 150 optical microscope

Revision as of 10:46, 24 September 2025

Anneal & Furnace

Tool Location Substrate size Gases Features Links

Deposition bay 1 Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability 2%H2 in N2, N2, O2, Ar
  • Model: Allwin AW-610T
  • Programmable, 10°C to 120°C per second.
  • ERP Pyrometer 450-1250°C with ±1°C
  • Thermocouple 100-800°C with ±0.5°C accuracy & rapid response
  • Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer
  • Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
SOP

Advanced Photo bay
  • Model: Cascade TEK TVO-2
SOP
Blue M furnace big

Advanced Photo bay
  • Model: Blue M 0V-12A
  • Temp range: up to 260C
SOP
Blue M furnace little

Advanced Photo bay
  • Model: Blue M 0V-8A
  • Temp range: up to 260C
SOP
Narco vacuum oven

Advanced Photo bay
  • Model: Narco 5831 Vacuum Oven

Deposition

CVD (chemical vapor deposition)
Tool Location Substrate size Deposition films Gases Features Links
Oxford PECVD

Deposition bay 1 up to 6" wafer SiO2, Si3N4, SiNO 2% SiH4/N2, NH3, N2O, N2, He, CF4
  • PlasmaPro System 100
  • Electrode specs: 240mm diameter, up to 400°C
  • Load lock
  • No wafer clamping, fixed height
  • RF power 300W
  • LF power 500W
SOP
Veeco ALD

Deposition bay 1 up to 4" diameter or small pieces MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2 N2 as a carrier gas

O2 or O3 as film precursor

  • Savannah S200
  • Reactor temperature: 150°C for most recipes, up to 270°C
  • Ozone generator can replace O2 with O3
SOP
PVD (physical vapor deposition)
Tool Location Substrate size

(up to diameter)

# of pockets E-beam voltage Deposition materials Gases Features Links
Angstrom Evaporator

Deposition bay 1 6" 4 10kV Ti, Al, Al2O3 Ar, 5% O2 in Ar
  • variable angle stage
  • substrate rotation
  • substrate heater
  • ion mill for substrate cleaning
  • load lock
SOP
CHA Evaporator

Deposition bay 2 6" 6 @ 15cc 10kV Ti, Au, Pt, Pd, Cr, Ni and Ag
  • Sweep controller
  • motor-driven deposition shield
  • 8kW heater array
  • Lift-off fixturing
  • substrate rotation
  • substrate dome for twenty-two 100mm back loaded wafers
  • Inficon IC/6 for thickness control
SOP
KJL Evaporator

Deposition bay 1 6" 4 5kV Ti, Au, Pt, Pd, Cr, Ni, and Ag. Other materials available upon request.
  • substrate rotation
  • source to substrate distance is approx. 15″ (381mm)
Temescal Metal e-beam evaporator Deposition bay 1 Not in service. SOP
Substrate size # of sources Sputter power
KJL Sputter

Deposition bay 1 6"
  • 4 DC
  • 1 RF/DC
  • DC sputter power 500 W
  • RF sputter power 300 W
Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, and ITO. Other materials available upon request. Ar, O2
  • Target size: 2"
  • Substrate rotation
SOP

Dry Etching & Plasma Cleaning

See also Dry etching recipes.

Etchers
Tool Location Substrate

size

Allowed

materials

Disallowed

materials

Gases Table temperature Features Links
Oxford DRIE

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB No exposed metals (except Cr) Ar, O2, CF4, CHF3, SF6, C4F8 20C
  • Model: Oxford System 100 Deep reactive-ion etcher
  • Etch deep Si with Bosch process
  • ICP power (max) 3000W
  • Table RF power (max) 300W
Oxford DRIE-ALE

Etch bay 1
  • Oxford Deep reactive-ion etcher and atomic-layer etcher.
  • This new tool is currently being commissioned
Oxford III-V

Etch bay 1 4" wafer clamp, smaller pieces may go onto carrier wafers

2″, 3″, 4″, 6″, 8″ wafers possible

InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene No exposed metals (except Cr)

No deep etching polymers (>1 µm)

Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4 -120 to 200C
  • Model: Oxford PlasmaPro 100 Cobra III-V etcher
  • Etch III-V materials
  • Cryo cooling
  • Helium backside cooling
  • ICP power (max) 1500W
  • Table RF power (max) 1500W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
Oxford RIE

Etch bay 1 Up to 200 mm wafers Si, SiO2, Si3N4 No exposed metals (except Cr)

No deep etching polymers (>1 µm)

Ar, O2, CF4, CHF3, SF6 20C
  • Model: Oxford PlasmaPro 80 reactive ion etcher
  • Etch dielectrics
  • Table RF power (max) 300W
  • Optical endpoint detection: Horiba Jobin Yvon LEM G50
XeF2 etcher

Deposition bay 1 Up to 6" wafers Si None Crystal XeF2 source 20C
  • Etch Si quickly and isotropically with high selectivity
  • Custom built by the Armani group
Plasma cleaning / ashing
Tool Location Substrate size Allowed materials Gases Features Links
Tegal O2 Plasma Asher

Advanced Photo Bay 200 mm pieces or wafers Photoresist, graphene, CNT O2
  • Model: Tegal CU90??
SOP
Tegal Plasma

Advanced Photo Bay
  • Model: Tegal Plasma 915
  • Tool is currently not in operation
YES O2 Plasma

Advanced Photo Bay 200mm pieces or wafers O2
  • Model: Yield Engineering System YES-CV200RFS
  • 1000W table RF power
  • Heat up to 250C
Quickstart

Lithography

E-beam and laser
Tool Location Substrate size Exposure

resolution

Features Links
Raith EBL

Ebeam Bay 4" wafer, or small pieces up to 2" <8nm
  • Model: EBPG5150
  • Thermal Field Emission 50kV and 100kV
  • Beam current 350nA
  • Pattern Generator 125 MHZ Genlsys – Beamer
SOP
Heidelberg DWL

Metrology Bay
  • Min substrate/mask size 5x5mm
  • Max substrate/mask size 9"x9"
300nm
  • Model: Heidelberg DWL 66+ (Direct Write Laser)
  • Front and backside alignment
  • Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
  • Write modes (trading off high speed and high resolution)
    • High resolution (min feature size 0.3um)
    • Mode IV: min size 2um
    • Mode V: min size 4um
  • Alignment modes: Manual, semi-automatic, and fully automatic alignment
SOP
UV mask aligners
Tool Location Substrate

size

Mask

size

Exposure

resolution

Features Links
Aligner A (MJB3)

Advanced Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Backside alignment
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
SOP
Aligner B (MJB3)

Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
SOP
Aligner C (MJB4)

Photo bay Pieces up to 2" 3", 4", and 5" 0.8um
  • Exposure wavelength UV 400, 350 – 450nm
  • Eyepieces 10x, objectives 5x, 10x, 20x
SOP
Aligner D (MA BA6 Gen4)

Advanced Photo Bay 0.8um
  • Backside alignment
  • Exposure wavelength UV400 350 – 450 nm
  • Exposure source 450W LED
  • Digital camera objectives 5x, 10x
SOP

Metrology

Assorted metrology
Tool Location Features Links
4-point Probe

Metrology bay
  • Model: Signatone 4-point probe
  • SP4 probe
  • Readout with HP 34401A multimeter
Dektak profilometer

Metrology bay
  • Model: Bruker DektakXT profilometer
  • Scan Length Range 55mm (2in)
  • 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum
  • Max. Sample Thickness 50mm (1.95in)
  • Step Height Repeatability <5Å, 1sigma on 0.1μm step
  • Vertical Range 1mm (0.039in.)
  • Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm;
  • 150 Å @ 1mm 3D capability
SOP
Ellipsometer

Photo bay
  • Thin film thickness measurement
  • Laser wavelengths 4050, 6328, 8300 Angstroms
  • Wafer mapping Yes
SOP
Filmetrics F20

Photo bay Thin film thickness measurement SOP
Microscopes
Tool Location Features Links
Desktop SEM

Metrology bay
  • Model: Phenom ProX G6 Desktop Scanning Electron Microscope
  • Acc Voltage 5 – 15kV
  • Resolution <10nm (for BSED)
  • Magnification 80-150,000x
  • Electron or optical imaging modes
  • Sample Size – up to 32mm
SOP

Operation manual

Nikon LV 150 optical microscope

Photo bay
  • Brightfield & Darkfield Polarizer/Analyzer
  • Halogen Lamp 5x, 10x, 20x, 50x, 100x
  • Camera – 5.9 MP resolution
  • USB output/WIFI for exporting images
SOP
Max ERB optical microscope

Photo bay
  • Zeiss 47 30 12 9902 binocular microscope head
  • MSA-001 linear encoder
Zeiss optical microscope

Advanced photo bay
Nikon SMZ-10A optical microscope

Advanced photo bay
  • Dyna Lite 150 light source
  • Olympus UC30 camera
Nikon optical microscope

Advanced photo bay
  • Dyna Lite 150 light source

Packaging & Mechanical Tooling

Wafer and die processing
Tool Location Substrate size Features Links
Ball & Wedge bonder

Etch bay 2
  • Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw

Common chase up to 8" or 250x250 mm
  • Model: DISCO Corp. DAD3350 Dicing Saw
  • 1.8 kW spindle
  • X-axis Cutting range 260 mm
  • Cutting speed mm/s 0.1 ~ 600
  • Y-axis Cutting range 260 mm
  • Index step: 0.0001 mm Z-axis
  • Max. stroke: 32.2 mm
  • Moving resolution: 0.00005 mm
  • Repeatability accuracy: 0.001 mm
Mini Polisher

Common chase up to 1" diameter
  • EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
  • 20nm, 50nm, 0.25um, 1um, 5um, 10um polishing slurries/pastes available
  • Smooth polishing pads and sanding pads from 60-3000 grit available
LatticeAx Cleaver

Photo bay
  • LatticeAx 420 Cleaving System
  • 2-axis linear stage
  • Digital camera
Operation manual
FlipScribe Cleaver

Photo bay
  • Model: LatticeGear FlipScribe
Vacuum Bag Sealer

Advanced photo bay
  • Model: Gramatech GVS2600R Vacuum Sealer
  • 36" max sealing width
  • N2 purge bags before sealing
  • Foot lever operation
  • Automated purge/vacuum/heat-seal/cool sequence

PCB Processing

PCB processing
Tool Location Features Links
LPKF PCB mill

Common chase
  • Model: LPKF ProtoMat S103
  • PCB milling, through hole drilling, contour routing, solder dispensing
  • CircuitPro software available for design work
  • Accepts design file Gerber export from various CAD softwares
  • Mechanical resolution 0.5um
  • Max PCB size: A4
LPKF electroplater

Common chase
  • Model: LPKF Contac S4
  • Multistep clean and plate process
  • Through-hole copper electroplating
  • Not yet in use
Operation manual

Wet Process

Solvent fume hood (located in Metrology bay)
Tool Description Links
Heated ultrasonic bath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Solvent drains
N2 sprayers
Acid fume hood left-side (located in Etch bay)
Tool Description Links
This fume hood is the only fume hood where the Piranha and Nanostrip chemicals may be used.
Heated bath Model: Imtec Accubath SOP
Quick-dump-rinse tank (QDR)
DI water tap
N2 gun
Acid fume hood right-side (located in Etch bay)
Tool Description Links
Piranha and Nanostrip chemicals are NOT allowed in this fume hood.
Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate left Model: Torrey Pines HS70
Torrey Pines hot plate right
Quick-dump-rinse tank (QDR)
DI water tap
N2 sprayer
Resist fume hood (located in Advanced Photo bay)
Tool Description Links
Spinner left Laurell resist spinner SOP
Spinner right
Bake plate 1 Apogee bake plate SOP
Bake plate 2
Bake plate 3
Bake plate 4
Base and developer fume hood left-side (located in Advanced Photo bay)
Tool Description Links
Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
N2 sprayer
Base and developer fume hood right-side (located in Advanced Photo bay)
Tool Description Links
Heated bath Model: Imtec Accubath SOP
Torrey Pines hot plate Model: Torrey Pines HS70
Quick-dump-rinse tank (QDR)
DI water tap
N2 sprayer
E-beam resist fume hood (located in Photo bay)
Tool Description Links
Headway spinner left
  • Model: Headway Research CB15
  • Controller model: Headway Research PWM50
SOP
Headway spinner right
Apogee hot plate left SOP
Apogee hot plate right
Ultrasonic heated bath
Torrey Pines hot plate/ stirrer Model: Torrey Pines HS70