| Feature
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RIE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|RIE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford RIE{{#ifeq:{{{1}}}|RIE| ★|}}
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DRIE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|DRIE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford DRIE{{#ifeq:{{{1}}}|DRIE| ★|}}
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DRIEALE|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|DRIEALE|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford DRIE-ALE{{#ifeq:{{{1}}}|DRIEALE| ★|}}
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IIIV|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|IIIV|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | Oxford III-V{{#ifeq:{{{1}}}|IIIV| ★|}}
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XeF2|#FFCC00|#990000}}; color:{{#ifeq:{{{1}}}|XeF2|#990000|#FFCC00}}; padding:10px; border:2px solid #990000; font-weight:bold;" | XeF2 Etcher{{#ifeq:{{{1}}}|XeF2| ★|}}
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| Model
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RIE|#FFF5CC|#ffffff}};" | PlasmaPro 80 RIE
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DRIE|#FFF5CC|#ffffff}};" | Oxford System 100 DRIE
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DRIEALE|#FFF5CC|#ffffff}};" | Oxford DRIE + ALE
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IIIV|#FFF5CC|#ffffff}};" | PlasmaPro 100 Cobra
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XeF2|#FFF5CC|#ffffff}};" | Custom built (Armani group)
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| Location
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RIE|#FFF5CC|#ffffff}};" | Etch Bay 1
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DRIE|#FFF5CC|#ffffff}};" | Etch Bay 1
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DRIEALE|#FFF5CC|#ffffff}};" | Etch Bay 1
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IIIV|#FFF5CC|#ffffff}};" | Etch Bay 1
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XeF2|#FFF5CC|#ffffff}};" | Deposition Bay 1
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| Substrate Size
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RIE|#FFF5CC|#ffffff}};" | Up to 200 mm (8")
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DRIE|#FFF5CC|#ffffff}};" | Up to 4" clamp; 2", 3", 4", 6", 8" possible
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DRIEALE|#FFF5CC|#ffffff}};" | TBD (commissioning)
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IIIV|#FFF5CC|#ffffff}};" | Up to 4" clamp; 2", 3", 4", 6", 8" possible
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XeF2|#FFF5CC|#ffffff}};" | Up to 6"
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| Etch Type
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RIE|#FFF5CC|#ffffff}};" | RIE (capacitively coupled)
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DRIE|#FFF5CC|#ffffff}};" | DRIE / Bosch (ICP)
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DRIEALE|#FFF5CC|#ffffff}};" | DRIE + Atomic Layer Etch
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IIIV|#FFF5CC|#ffffff}};" | ICP-RIE (cryo capable)
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XeF2|#FFF5CC|#ffffff}};" | Isotropic chemical etch
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| Table RF Power
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RIE|#FFF5CC|#ffffff}};" | 300 W max
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DRIE|#FFF5CC|#ffffff}};" | 300 W max
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | 1500 W max
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XeF2|#FFF5CC|#ffffff}};" | N/A
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| ICP Power
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RIE|#FFF5CC|#ffffff}};" | None (RIE only)
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DRIE|#FFF5CC|#ffffff}};" | 3000 W max
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | 1500 W max
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XeF2|#FFF5CC|#ffffff}};" | N/A
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| Table Temperature
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RIE|#FFF5CC|#ffffff}};" | 20°C
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DRIE|#FFF5CC|#ffffff}};" | 20°C
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | -120°C to 200°C
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XeF2|#FFF5CC|#ffffff}};" | 20°C
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| Gases
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RIE|#FFF5CC|#ffffff}};" | Ar, O₂, CF₄, CHF₃, SF₆
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DRIE|#FFF5CC|#ffffff}};" | Ar, O₂, CF₄, CHF₃, SF₆, C₄F₈
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | Ar, O₂, SF₆, CH₄, H₂, Cl₂, BCl₃, SiCl₄
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XeF2|#FFF5CC|#ffffff}};" | XeF₂ (crystal source)
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| Allowed Materials
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RIE|#FFF5CC|#ffffff}};" | Si, SiO₂, Si₃N₄, oxide/nitride masks, Cr
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DRIE|#FFF5CC|#ffffff}};" | Si, SiO₂, SiN, Parylene, Polyimide, LiNbO₃, BCB
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | InP, InAs, GaN, AlGaAs, GaAs, InGaAsP, ITO, Si, SiC, MoS₂, WSe, Graphene
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XeF2|#FFF5CC|#ffffff}};" | Si only
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| Disallowed
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RIE|#FFF5CC|#ffffff}};" | No metals except Cr; no deep polymer >1 µm
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DRIE|#FFF5CC|#ffffff}};" | No exposed metals except Cr
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | No metals except Cr; no deep polymer >1 µm
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XeF2|#FFF5CC|#ffffff}};" | None listed
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| Endpoint Detection
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RIE|#FFF5CC|#ffffff}};" | ✓ Optical (LEM G50)
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DRIE|#FFF5CC|#ffffff}};" | ✓ Optical
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | ✓ Optical (LEM G50)
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XeF2|#FFF5CC|#ffffff}};" | ✗
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| Best For
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RIE|#FFF5CC|#ffffff}};" | Dielectric etching, passivation removal, via openings, resist descum
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DRIE|#FFF5CC|#ffffff}};" | Deep Si etching, high-aspect-ratio structures, Bosch process
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DRIEALE|#FFF5CC|#ffffff}};" | Precise atomic-layer-level etch control
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IIIV|#FFF5CC|#ffffff}};" | III-V semiconductors, exotic/compound materials, cryo etching
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XeF2|#FFF5CC|#ffffff}};" | Fast isotropic Si etching, high selectivity
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| Status
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RIE|#FFF5CC|#ffffff}};" | ✓ Operational
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DRIE|#FFF5CC|#ffffff}};" | ✓ Operational
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DRIEALE|#FFF5CC|#ffffff}};" | ⚠ Being commissioned
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IIIV|#FFF5CC|#ffffff}};" | ✓ Operational
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XeF2|#FFF5CC|#ffffff}};" | ✓ Operational
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| SOP
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RIE|#FFF5CC|#ffffff}};" | SOP
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DRIE|#FFF5CC|#ffffff}};" | SOP
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DRIEALE|#FFF5CC|#ffffff}};" | TBD
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IIIV|#FFF5CC|#ffffff}};" | SOP
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XeF2|#FFF5CC|#ffffff}};" | SOP
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