Tool list

Annealing & Furnace

Tool	Location	Substrate size	Gases	Description
RTA (Rapid Thermal Annealer)	Deposition bay 1	Small pieces, 2″, 3″, 4″, 5″, 6″ wafer capability	5 gases (which?)	Programmable, 10°C to 120°C per second. ERP Pyrometer 450-1250°C with ±1°C Thermocouple 100-800°C with ±0.5°C accuracy & rapid response Temperature repeatability: ±0.5°C or better at 1150°C wafer-to-wafer Temperature uniformity: ±5°C across a 6″ (150 mm) wafer at 1150°C.
Cascade Tek Furnace

Deposition

CVD (chemical vapor deposition)

Tool	Location	Substrate size	Deposition films	Gases	Features	Links
Oxford PECVD	Deposition bay 1	up to 6" wafer	SiO2, Si3N4, SiNO	2% SiH4/N2, NH3, N2O, N2, He, CF4	PlasmaPro System 100 Electrode specs: 240mm diameter, up to 400°C Load lock No wafer clamping, fixed height RF power 300W LF power 500W	SOP
Veeco ALD	Deposition bay 1	up to 4" diameter or small pieces	MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2	N2 as a carrier gas O2 or O3 as film precursor	Savannah S200 Reactor temperature: 150°C for most recipes, up to 270°C Ozone generator can replace O2 with O3	SOP

PVD (physical vapor deposition)

Tool	Location	Substrate size (up to diameter)	# of pockets	E-beam voltage	Deposition materials	Gases	Features	Links
Angstrom Evaporator	Deposition bay 1	6"	4	10kV	Ti, Al, Al2O3	Ar, 5% O2 in Ar	variable angle stage substrate rotation substrate heater ion mill for substrate cleaning load lock	SOP
CHA Evaporator	Deposition bay 2	6"	6 @ 15cc	10kV	Ti, Au, Pt, Pd, Cr, Ni and Ag		Sweep controller motor-driven deposition shield 8kW heater array Lift-off fixturing substrate rotation substrate dome for twenty-two 100mm back loaded wafers Inficon IC/6 for thickness control	SOP
KJL Evaporator	Deposition bay 1	6"	4	5kV	Ti, Au, Pt, Pd, Cr, Ni and Ag		substrate rotation source to substrate distance is approx. 15″ (381mm)	SOP how-to video
Temescal Metal e-beam evaporator							Not in service.
		Substrate size	# of sources	Sputter power
KJL Sputter	Deposition bay 1	6"	4 DC 1 RF/DC	DC sputter power 500 W RF sputter power 300 W	Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO	Ar, O2	Target size: 2" Substrate rotation	SOP

Lithography

E-beam and laser

Tool	Location	Substrate size	Exposure resolution	Features	Links
Raith EBL	Ebeam Bay	4" wafer, or small pieces up to 2"	<8nm	Model: EBPG5150 Thermal Field Emission 50kV and 100kV Beam current 350nA Pattern Generator 125 MHZ Genlsys – Beamer	SOP
Heidelberg DWL	Metrology Bay	Min substrate/mask size 5x5mm Max substrate/mask size 9"x9"	300nm	Model: Heidelberg DWL 66+ (Direct Write Laser) Front and backside alignment Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists) Write modes (trading off high speed and high resolution) High resolution (min feature size 0.3um) Mode IV: min size 2um Mode V: min size 4um Alignment modes: Manual, semi-automatic, and fully automatic alignment	SOP

UV mask aligners

Tool	Location	Substrate size	Mask size	Exposure resolution	Features	Links
Aligner A (MJB3)	Advanced Photo bay	Pieces up to 3”	3” and 4”	0.8um	Backside alignment Exposure modes Soft, Hard, and vacuum contacts Exposure wavelength UV 400, 350-450 nm Exposure source 350 W Hg Arc lamp	SOP
Aligner B (MJB3)	Photo bay	Pieces up to 3”	3” and 4”	0.8um	Exposure modes Soft, Hard, and vacuum contacts Exposure wavelength UV 400, 350-450 nm Exposure source 350 W Hg Arc lamp	SOP
Aligner C (MJB4)	Photo bay	Pieces up to 2"	3", 4", and 5"	0.8um	Exposure wavelength UV 400, 350 – 450nm Eyepieces 10x, objectives 5x, 10x, 20x	SOP
Aligner D (MA BA6 Gen4)	Advanced Photo Bay			0.8um	Backside alignment Exposure wavelength UV400 350 – 450 nm Exposure source 450W LED Digital camera objectives 5x, 10x	SOP

Dry Etching

Etchers

Tool	Location	Substrate size	Allowed materials	Disallowed materials	Gases	Table temperature	Features	Links
Oxford DRIE	Etch bay 1	4" wafer clamp, smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible	Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB	No exposed metals (except Cr)	Ar, O2, CF4, CHF3, SF6, C4F8	20C	Model: Oxford System 100 Deep reactive-ion etcher Etch deep Si with Bosch process ICP power (max) 3000W Table RF power (max) 300W	SOP Quickstart guide Recipes
Oxford DRIE-ALE	Etch bay 1						Oxford Deep reactive-ion etcher and atomic-layer etcher. This new tool is currently being commissioned
Oxford III-V	Etch bay 1	4" wafer clamp, smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible	InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene	No exposed metals (except Cr) No deep etching polymers (>1 µm)	Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4	-120 to 200C	Model: Oxford PlasmaPro 100 Cobra III-V etcher Etch III-V materials Cryo cooling Helium backside cooling ICP power (max) 1500W Table RF power (max) 1500W Optical endpoint detection: Horiba Jobin Yvon LEM G50	SOP Quickstart guide
Oxford RIE	Etch bay 1	Up to 200 mm wafers	Si, SiO2, Si3N4	No exposed metals (except Cr) No deep etching polymers (>1 µm)	Ar, O2, CF4, CHF3, SF6	20C	Model: Oxford PlasmaPro 80 reactive ion etcher Etch dielectrics Table RF power (max) 300W Optical endpoint detection: Horiba Jobin Yvon LEM G50	SOP Quickstart guide
XeF2 etcher	Deposition bay 1	Up to 6" wafers	Si	None	Crystal XeF2 source	20C	Etch Si quickly and isotropically with high selectivity Custom built by the Armani group	SOP Quickstart guide

Plasma cleaning / ashing

Tool	Location	Substrate size	Allowed materials	Gases	Features
O2 Plasma Asher	Advanced Photo Bay	200 mm pieces or wafers	Photoresist, graphene, CNT	O2	Model: CV200RFS(E) Descum, photoresist stripping, or organic material removal 1000W table RF power Heat up to 250C
Tegal Plasma	Advanced Photo Bay				Tegal 915 Plasma Strip
YES O2 Plasma	Advanced Photo Bay	200mm pieces or wafers		O2	Model: YES Engineering O2 Plasma 1000W table RF power Heat up to 250C

Metrology

Assorted metrology

Tool	Location	Features	Links
4-point Probe	Metrology bay	Model: Signatone 4-point probe SP4 probe Readout with HP 34401A multimeter	Multimeter SOP
Dektak profilometer	Metrology bay	Model: Bruker DektakXT profilometer Scan Length Range 55mm (2in) 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum Max. Sample Thickness 50mm (1.95in) Step Height Repeatability <5Å, 1sigma on 0.1μm step Vertical Range 1mm (0.039in.) Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm; 150 Å @ 1mm 3D capability	SOP
Ellipsometer	Photo bay	Thin film thickness measurement Laser wavelengths 4050, 6328, 8300 Angstroms Wafer mapping Yes	SOP
Filmetrics F20	Photo bay	Thin film thickness measurement

Microscopes

Tool	Location	Features	Links
Desktop SEM	Metrology bay	Model: Phenom ProX G6 Desktop Scanning Electron Microscope Acc Voltage 5 – 15kV Resolution <10nm (for BSED) Magnification 80-150,000x Electron or optical imaging modes Sample Size – up to 32mm	Operation manual
Nikon LV 150 optical microscope	Photo bay	Brightfield & Darkfield Polarizer/Analyzer Halogen Lamp 5x, 10x, 20x, 50x, 100x Camera – 5.9 MP resolution USB output/WIFI for exporting images	SOP
Max ERB optical microscope	Photo bay	Zeiss 47 30 12 9902 binocular microscope head MSA-001 linear encoder
Zeiss optical microscope	Advanced photo bay
Nikon SMZ-10A optical microscope	Advanced photo bay	Dyna Lite 150 light source Olympus UC30 camera
Nikon optical microscope	Advanced photo bay	Dyna Lite 150 light source

Oxidation

Tool	Description
Oxide (lower)
Oxide (upper)

Packaging & Mechanical Tooling

Wafer and die processing

Tool	Location	Substrate size	Features	Links
Ball & Wedge bonder	Etch bay 2		Model: F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder	SOP Operation manual
Dicing Saw	Common chase	up to 8" or 250x250 mm	Model: DISCO Corp. DAD3350 Dicing Saw 1.8 kW spindle X-axis Cutting range 260 mm Cutting speed mm/s 0.1 ～ 600 Y-axis Cutting range 260 mm Index step: 0.0001 mm Z-axis Max. stroke: 32.2 mm Moving resolution: 0.00005 mm Repeatability accuracy: 0.001 mm	SOP Operation manual
Mini Polisher	Common chase	up to 1" diameter	EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher	SOP Manufacturer info
LatticeAx Cleaver	Photo bay		LatticeAx 420 Cleaving System 2-axis linear stage Digital camera	Operation manual
FlipScribe Cleaver	Photo bay		Model: LatticeGear FlipScribe	Operation manual Quickstart
Vacuum Bag Sealer	Advanced photo bay		Model: Gramatech GVS2600R Vacuum Sealer 36" max sealing width N2 purge bags before sealing Foot lever operation Automated purge/vacuum/heat-seal/cool sequence

PCB processing

Tool	Location	Features	Links
LPKF PCB mill	Common chase	Model: LPKF ProtoMat S103 PCB milling, through hole drilling, contour routing, solder dispensing CircuitPro software available for design work Accepts design file Gerber export from various CAD softwares Mechanical resolution 0.5um Max PCB size: A4	Operation manual
LPKF electroplater	Common chase	Model: LPKF Contac S4 Multistep clean and plate process Through-hole copper electroplating	Operation manual

Wet Process

Solvent fume hood (in Metrology bay)

Tool	Description
Heated ultrasonic bath
Hot plate

Acid fume hood left-side (in Etch bay)

Tool	Description

Acid fume hood right-side (in Etch bay)

Tool	Description

Resist fume hood

Tool	Description	Links
Spinner 1	Laurell resist spinner (left side)
Spinner 2	Laurell resist spinner (right side)
Bake plate 1	Apogee bake plate	SOP
Bake plate 2	Apogee bake plate	SOP
Bake plate 3	Apogee bake plate	SOP
Bake plate 4	Apogee bake plate	SOP

Base and developer fume hood left-side (in Advanced Photo bay)

Tool	Description

Base and developer fume hood right-side (in Advanced Photo bay)

Tool	Description

EBL-use-only fume hood (located in Photo bay)

Tool	Description	Links
Headway spinner left File:Headway spinner left.jpg	Model: Headway Research CB15 Controller model: Headway Research PWM50	SOP
Headway spinner right File:Headway spinner right.jpg	Model: Headway Research CB15 Controller model: Headway Research PWM50	SOP
Apogee hot plate left File:EBL torrey pines hot plate left.jpg		SOP
Apogee hot plate right File:EBL torrey pines hot plate right.jpg		SOP
Torrey Pines hot plate/ stirrer File:EBL torrey pines hot plate.jpg	Model: Torrey Pines HS70
Ultrasonic heated bath