Tool list: Difference between revisions

From USC Nanofab Wiki
Jump to navigation Jump to search
← Older editNewer edit →
J (talk | contribs)
Bureaucrats, Interface administrators, Suppressors, Administrators
587 edits
VisualWikitext
Change Raith title
Add etcher comparison table
Line 72: Line 72:
|[[Aligner D (MA BA6 Gen4)]]
|[[Aligner D (MA BA6 Gen4)]]
|MA/BA aligner
|MA/BA aligner
|}
== Dry Etching ==
{| class="wikitable"
|+Etchers
!Tool
!Description
|-
|[[Oxford DRIE]]
|Oxford System 100 Deep reactive-ion etcher
|-
|[[Oxford DRIE2]]
|Oxford System ? Deep reactive-ion etcher
|-
|[[Oxford III-V]]
|Oxford PlasmaPro 100 Cobra III-V etcher
|-
|[[Oxford RIE]]
|Oxford PlasmaPro 80 reactive ion etcher
|-
|[[XeF2 etcher]]
|XeF2 etcher
|}
|}
{| class="wikitable"
{| class="wikitable"
Line 87: Line 109:
|YES Engineering O2 Plasma
|YES Engineering O2 Plasma
|}
|}
== Etching ==
{| class="wikitable"
{| class="wikitable"
|+
|+Dry etch equipment comparison
!Tool
!
!Description
![[Oxford III-V]]
![[Oxford RIE]]
![[Oxford DRIE]]
![[XeF2 etcher]]
![[YES O2 Plasma]]
|-
!Model
|Oxford PlasmaPro 100 Cobra 180
|Oxford PlasmaPro 80 RIE
|Oxford System 100 Phoenix GP
|Custom-built
|CV200RFS(E)
|-
!Use case
|Etching III-V materials
|Etching dielectrics
|Etching deep Si with Bosch process
|Etching Si quickly and isotropically with high selectivity
|Descum, photoresist stripping, or organic material removal
|-
!Allowed materials
|InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene
|SiO2, SiN, HfO2
|Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB
|Si
|Photoresist, graphene, CNT
|-
!Material restrictions
|No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|No exposed metals (except Cr)
|None
|None
|-
!Load lock
|Yes
|
|Yes
|
|
|-
!Substrate size
|4" wafer clamp
Smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Up to 200 mm wafers
|4" wafer clamp
Smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|Up to 100 mm wafers
|Up to 200 mm wafers
|-
!Ar
|Yes
|Yes
|Yes
|
|
|-
!O2
|Yes
|Yes
|Yes
|
|Yes
|-
!CF4
|
|Yes
|Yes
|
|
|-
!CHF3
|
|Yes
|Yes
|
|
|-
!SF6
|Yes
|Yes
|Yes
|
|
|-
!C4F8
|
|
|Yes
|
|
|-
!CH4
|Yes
|
|
|
|
|-
!H2
|Yes
|
|
|
|
|-
!Cl2
|Yes
|
|
|
|
|-
!BCl3
|Yes
|
|
|
|
|-
!SiCl4
|Yes
|
|
|
|
|-
!XeF2
|
|
|
|Yes
|
|-
!Table RF power (max)
|300W
|300W
|600W
|
|1000W
|-
|-
|[[Oxford DRIE]]
!ICP power (max)
|Oxford System 100 Deep reactive-ion etcher
|1500W
|
|3000W
|
|
|-
|-
|[[Oxford DRIE2]]
!He backside cooling
|Oxford System ? Deep reactive-ion etcher
|Yes
|
|Yes
|
|
|-
|-
|[[Oxford III-V]]
!Table temperature
|Oxford PlasmaPro 100 Cobra III-V etcher
| -120 to 200C
|20C
|20C
|20C
|Ambient - 250C
|-
|-
|[[Oxford RIE]]
!Endpoint detection
|Oxford PlasmaPro 80 reactive ion etcher
|Horiba Jobin Yvon
LEM G50
|Horiba Jobin Yvon
LEM G50
|
|
|
|-
|-
|[[XeF2 etcher]]
!
|XeF2 etcher
|
|
|
|
|
|}
|}


Revision as of 15:44, 24 March 2025

Annealing

Tool Description
RTA Rapid Thermal Annealer

Deposition

CVD (chemical vapor deposition)
Tool Description
Veeco ALD Atomic Layer Deposition
Oxford PECVD Plasma-enhanced chemical vapor deposition
PVD (physical vapor deposition)
Tool Description
Angstrom Evaporator Angstrom Engineering e-beam evaporator
CHA Evaporator CHA Industries e-beam evaporator
KJL Evaporator Kurt J. Lesker e-beam evaporator
Temescal Metal Temescal e-beam evaporator
KJL Sputter Kurt J. Lesker sputterer

Lithography

E-beam lithography
Tool Description
Raith EBL Raith e-beam lithography EBPG5150
Laser writing
Tool Description
Heidelberg DWL Heidelberg DWL 66+ (Direct Write Laser)
Aligners
Tool Description
Aligners A and B (MJB3) MJB3 aligner
Aligner C (MJB4) MJB4 aligner
Aligner D (MA BA6 Gen4) MA/BA aligner

Dry Etching

Etchers
Tool Description
Oxford DRIE Oxford System 100 Deep reactive-ion etcher
Oxford DRIE2 Oxford System ? Deep reactive-ion etcher
Oxford III-V Oxford PlasmaPro 100 Cobra III-V etcher
Oxford RIE Oxford PlasmaPro 80 reactive ion etcher
XeF2 etcher XeF2 etcher
Plasma cleaning / ashing
Tool Description
O2 Plasma Asher
Tegal Plasma Tegal 915 Plasma Strip
YES O2 Plasma YES Engineering O2 Plasma
Dry etch equipment comparison
Oxford III-V Oxford RIE Oxford DRIE XeF2 etcher YES O2 Plasma
Model Oxford PlasmaPro 100 Cobra 180 Oxford PlasmaPro 80 RIE Oxford System 100 Phoenix GP Custom-built CV200RFS(E)
Use case Etching III-V materials Etching dielectrics Etching deep Si with Bosch process Etching Si quickly and isotropically with high selectivity Descum, photoresist stripping, or organic material removal
Allowed materials InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene SiO2, SiN, HfO2 Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB Si Photoresist, graphene, CNT
Material restrictions No exposed metals (except Cr)

No deep etching polymers (>1 µm)

No exposed metals (except Cr)

No deep etching polymers (>1 µm)

No exposed metals (except Cr) None None
Load lock Yes Yes
Substrate size 4" wafer clamp

Smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible

Up to 200 mm wafers 4" wafer clamp

Smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible

Up to 100 mm wafers Up to 200 mm wafers
Ar Yes Yes Yes
O2 Yes Yes Yes Yes
CF4 Yes Yes
CHF3 Yes Yes
SF6 Yes Yes Yes
C4F8 Yes
CH4 Yes
H2 Yes
Cl2 Yes
BCl3 Yes
SiCl4 Yes
XeF2 Yes
Table RF power (max) 300W 300W 600W 1000W
ICP power (max) 1500W 3000W
He backside cooling Yes Yes
Table temperature -120 to 200C 20C 20C 20C Ambient - 250C
Endpoint detection Horiba Jobin Yvon

LEM G50

Horiba Jobin Yvon

LEM G50

Metrology

Tool Description
4-point Probe Signatone 4-point probe
Dektak Bruker DektakXT profilometer
Desktop SEM Phenom ProX G6 Desktop Scanning Electron Microscope

Oxidation

Tool Description
Oxide (lower)
Oxide (upper)

Packaging & Mechanical Tooling

Tool Description
Ball & Wedge bonder F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw DISCO Corp. DAD3350 Dicing Saw
Polisher EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
Scribe Tool LatticeAx 420 Cleaving System
Vacuum Sealer Gramatech GVS2600R Vacuum Sealer

Testers

Tool Description
Keithley S530 Keithley (Tektronix) S530 Parametric tester

Wet Process

Solvent fume hood (in Metrology bay)
Tool Description
Heated ultrasonic bath
Hot plate
Acid fume hood left-side (in Etch bay)
Tool Description
Acid fume hood right-side (in Etch bay)
Tool Description
Resist fume hood
Tool Description
Spinner 1 Laurell resist spinner (left side)
Spinner 2 Laurell resist spinner (right side)
Bake plate 1 Apogee bake plate
Bake plate 2 Apogee bake plate
Bake plate 3 Apogee bake plate
Bake plate 4 Apogee bake plate
Base and developer fume hood left-side (in Advanced Photo bay)
Tool Description
Base and developer fume hood right-side (in Advanced Photo bay)
Tool Description
EBL-use-only fume hood (in Photo bay)
Tool Description
Headway spinner left Headway resist spinner
Headway spinner right Headway resist spinner
Torrey Pines Hot Plate left
Torrey Pines Hot Plate right
Ultrasonic heated bath
Retrieved from "https://wiki.nanofab.usc.edu/index.php?title=Tool_list&oldid=56"