Tool list: Difference between revisions

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Add info for other deposition tools
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|+CVD (chemical vapor deposition)
|+CVD (chemical vapor deposition)
!Tool
!Tool
!Location
!Substrate size (up to diameter)
!Substrate size (up to diameter)
!Films available
!Deposition films
!Gases
!Gases
!Other features
!Features
!Links
!Links
|-
|[[Veeco ALD]]
[[File:ALD.jpg|frameless|212x212px]]
|4"
|MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|N2 as a carrier gas
O2 or O3 as film precursor
|
* Reactor temperature: 150°C for most recipes, up to 270°C
* Ozone generator can replace O2 with O3
|[[:File:ALD Quick Start Guide - August 2023.pdf|SOP]]
|-
|-
|[[Oxford PECVD]]
|[[Oxford PECVD]]
[[File:PECVD.jpg|frameless|200x200px]]
[[File:PECVD.jpg|frameless|200x200px]]
|Deposition bay 1
|6" wafer
|6" wafer
|SiO2, Si3N4, SiNO
|SiO2, Si3N4, SiNO
|2% SiH4/N2, NH3, N2O, N2, He, CF4
|2% SiH4/N2, NH3, N2O, N2, He, CF4
|
|
* PlasmaPro System 100
* Electrode specs: 240mm diameter, up to 400°C
* Electrode specs: 240mm diameter, up to 400°C
* Load lock
* Load lock
Line 42: Line 34:
* LF power 500W
* LF power 500W
|[[:File:DEP-010 Oxford PECVD.pdf|SOP]]
|[[:File:DEP-010 Oxford PECVD.pdf|SOP]]
|-
|[[Veeco ALD]]
[[File:ALD.jpg|frameless|212x212px]]
|Deposition bay 1
|4"
|MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|N2 as a carrier gas
O2 or O3 as film precursor
|
* Savannah S200
* Reactor temperature: 150°C for most recipes, up to 270°C
* Ozone generator can replace O2 with O3
|[[:File:ALD Quick Start Guide - August 2023.pdf|SOP]]
|}
|}
{| class="wikitable"
{| class="wikitable"
|+PVD (physical vapor deposition)
|+PVD (physical vapor deposition)
!Tool
!Tool
!Location
!Substrate size  
!Substrate size  
(up to diameter)
(up to diameter)
Line 52: Line 58:
!Deposition materials
!Deposition materials
!Gases
!Gases
!Other features
!Features
!Links
!Links
|-
|-
|[[Angstrom Evaporator]]
|[[Angstrom Evaporator]]
[[File:Angstrom Evaporator.jpg|frameless|200x200px]]
[[File:Angstrom Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|6"
|6"
|4
|4
Line 72: Line 79:
|[[CHA Evaporator]]
|[[CHA Evaporator]]
[[File:CHA Evaporator.jpg|frameless|195x195px]]
[[File:CHA Evaporator.jpg|frameless|195x195px]]
|Deposition bay 2
|6"
|6"
|6 @ 15cc
|6 @ 15cc
Line 89: Line 97:
|[[KJL Evaporator]]
|[[KJL Evaporator]]
[[File:KJL Evaporator.jpg|frameless|200x200px]]
[[File:KJL Evaporator.jpg|frameless|200x200px]]
|Deposition bay 1
|6"
|6"
|4
|4
Line 101: Line 110:
|-
|-
|[[Temescal Metal]]
|[[Temescal Metal]]
|
|
|
|
|
Line 110: Line 120:
|-
|-
|
|
!
!Substrate size
!Substrate size
!# of sources
!# of sources
Line 120: Line 131:
|[[KJL Sputter]]
|[[KJL Sputter]]
[[File:KJL Sputter.jpg|frameless|200x200px]]
[[File:KJL Sputter.jpg|frameless|200x200px]]
|Deposition bay 1
|6"
|6"
|5 total, 4 DC, 1 RF/DC
|
* 4 DC
* 1 RF/DC
|
|
* DC sputter power 500 W
* DC sputter power 500 W
Line 135: Line 149:
== Lithography ==
== Lithography ==
{| class="wikitable"
{| class="wikitable"
|+E-beam lithography
|+E-beam and laser
!Tool
!Tool
!Description
!Location
!Substrate size
!Exposure
resolution
!Features
!Links
|-
|-
|[[Raith EBL]]
|[[Raith EBL]]
|Raith e-beam lithography EBPG5150
[[File:Raith EBPG5150.jpg|frameless|200x200px]]
|}
|Ebeam Bay
{| class="wikitable"
|4" wafer, or small pieces up to 2"
|+Laser writing
|<8nm
!Tool
|
!Description
* Model EBPG5150
* Thermal Field Emission 50kV and 100kV
* Beam current 350nA
* Pattern Generator 125 MHZ Genlsys – Beamer
|[[:File:Raith EBPG 5150 SOP.pdf|SOP]]
|-
|-
|[[Heidelberg DWL]]
|[[Heidelberg DWL]]
|Heidelberg DWL 66+ (Direct Write Laser)
[[File:Heidelberg DWL 66+.jpg|frameless|200x200px]]
|Metrology Bay
|
* Min substrate/mask size 5x5mm
* Max substrate/mask size 9"x9"
|300nm
|
* Model Heidelberg DWL 66+ (Direct Write Laser)
* Front and backside alignment
* Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
* Write modes (trading off high speed and high resolution)
** High resolution (min feature size 0.3um)
** Mode IV: min size 2um
** Mode V: min size 4um
* Alignment modes: Manual, semi-automatic, and fully automatic alignment
|[[:File:Heidelberg DWL 66 plus SOP.pdf|SOP]]
|}
|}
{| class="wikitable"
{| class="wikitable"
|+Aligners
|+UV mask aligners
!Tool
!Tool
!Description
!Location
!Substrate
size
!Mask
size
!Exposure
resolution
!Features
!Links
|-
|[[Aligners A and B (MJB3)|Aligner A (MJB3)]]
[[File:MJB3 A.jpg|frameless|200x200px]]
|Advanced Photo bay
|Pieces up to 3”
|3” and 4”
|0.8um
|
* Backside alignment
* Exposure modes Soft, Hard, and vacuum contacts
* Exposure wavelength UV 400, 350-450 nm
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-
|-
|[[Aligners A and B (MJB3)]]
|[[Aligners A and B (MJB3)|Aligner B (MJB3)]]
|MJB3 aligner
[[File:MJB3 B.jpg|frameless|200x200px]]
|Photo bay
|Pieces up to 3”
|3” and 4”
|0.8um
|
* Exposure modes Soft, Hard, and vacuum contacts
* Exposure wavelength UV 400, 350-450 nm
* Exposure source 350 W Hg Arc lamp
|[[:File:Mask Aligner MJB3 SOP.pdf|SOP]]
|-
|-
|[[Aligner C (MJB4)]]
|[[Aligner C (MJB4)]]
|MJB4 aligner
[[File:MJB4 C.jpg|frameless|150x150px]]
|Photo bay
|Pieces up to 2"
|3", 4", and 5"
|0.8um
|
* Exposure wavelength UV 400, 350 – 450nm
* Eyepieces 10x, objectives 5x, 10x, 20x
|[[:File:Mask Aligner MJB4 SOP.pdf|SOP]]
|-
|-
|[[Aligner D (MA BA6 Gen4)]]
|[[Aligner D (MA BA6 Gen4)]]
|MA/BA aligner
[[File:MABA6 D.jpg|frameless|200x200px]]
|Advanced Photo Bay
|
|
|0.8um
|
* Backside alignment
* Exposure wavelength UV400 350 – 450 nm
* Exposure source 450W LED
* Digital camera objectives 5x, 10x
|[[:File:Mask Aligner MABA6 SOP.pdf|SOP]]
|}
|}


Revision as of 14:47, 7 May 2025

Annealing

Tool Description
RTA Rapid Thermal Annealer

Deposition

CVD (chemical vapor deposition)
Tool Location Substrate size (up to diameter) Deposition films Gases Features Links
Oxford PECVD

Deposition bay 1 6" wafer SiO2, Si3N4, SiNO 2% SiH4/N2, NH3, N2O, N2, He, CF4
  • PlasmaPro System 100
  • Electrode specs: 240mm diameter, up to 400°C
  • Load lock
  • No wafer clamping, fixed height
  • RF power 300W
  • LF power 500W
 SOP
Veeco ALD

Deposition bay 1 4" MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2 N2 as a carrier gas

O2 or O3 as film precursor

  • Savannah S200
  • Reactor temperature: 150°C for most recipes, up to 270°C
  • Ozone generator can replace O2 with O3
 SOP
PVD (physical vapor deposition)
Tool Location Substrate size

(up to diameter)

# of pockets E-beam voltage Deposition materials Gases Features Links
Angstrom Evaporator

Deposition bay 1 6" 4 10kV Ti, Al, Al2O3 Ar, 5% O2 in Ar
  • variable angle stage
  • substrate rotation
  • substrate heater
  • ion mill for substrate cleaning
  • load lock
 SOP
CHA Evaporator

Deposition bay 2 6" 6 @ 15cc 10kV Ti, Au, Pt, Pd, Cr, Ni and Ag
  • Sweep controller
  • motor-driven deposition shield
  • 8kW heater array
  • Lift-off fixturing
  • substrate rotation
  • substrate dome for twenty-two 100mm back loaded wafers
  • Inficon IC/6 for thickness control
 SOP
KJL Evaporator

Deposition bay 1 6" 4 5kV Ti, Au, Pt, Pd, Cr, Ni and Ag
  • substrate rotation
  • source to substrate distance is approx. 15″ (381mm)
 SOP,

how-to video

Temescal Metal Temescal e-beam evaporator
Substrate size # of sources Sputter power
KJL Sputter

Deposition bay 1 6"
  • 4 DC
  • 1 RF/DC
  • DC sputter power 500 W
  • RF sputter power 300 W
 Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO Ar, O2
  • Target size: 2"
  • Substrate rotation
 SOP

Lithography

E-beam and laser
Tool Location Substrate size Exposure

resolution

Features Links
Raith EBL

Ebeam Bay 4" wafer, or small pieces up to 2" <8nm
  • Model EBPG5150
  • Thermal Field Emission 50kV and 100kV
  • Beam current 350nA
  • Pattern Generator 125 MHZ Genlsys – Beamer
 SOP
Heidelberg DWL

Metrology Bay
  • Min substrate/mask size 5x5mm
  • Max substrate/mask size 9"x9"
 300nm
  • Model Heidelberg DWL 66+ (Direct Write Laser)
  • Front and backside alignment
  • Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
  • Write modes (trading off high speed and high resolution)
    • High resolution (min feature size 0.3um)
    • Mode IV: min size 2um
    • Mode V: min size 4um
  • Alignment modes: Manual, semi-automatic, and fully automatic alignment
 SOP
UV mask aligners
Tool Location Substrate

size

Mask

size

Exposure

resolution

Features Links
Aligner A (MJB3)

Advanced Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Backside alignment
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner B (MJB3)

Photo bay Pieces up to 3” 3” and 4” 0.8um
  • Exposure modes Soft, Hard, and vacuum contacts
  • Exposure wavelength UV 400, 350-450 nm
  • Exposure source 350 W Hg Arc lamp
 SOP
Aligner C (MJB4)

Photo bay Pieces up to 2" 3", 4", and 5" 0.8um
  • Exposure wavelength UV 400, 350 – 450nm
  • Eyepieces 10x, objectives 5x, 10x, 20x
 SOP
Aligner D (MA BA6 Gen4)

Advanced Photo Bay 0.8um
  • Backside alignment
  • Exposure wavelength UV400 350 – 450 nm
  • Exposure source 450W LED
  • Digital camera objectives 5x, 10x
 SOP

Dry Etching

See also: Dry etch equipment comparison.

Etchers
Tool Description
Oxford DRIE Oxford System 100 Deep reactive-ion etcher
Oxford DRIE-ALE Oxford Deep reactive-ion etcher and atomic-layer etcher.
Oxford III-V Oxford PlasmaPro 100 Cobra III-V etcher
Oxford RIE Oxford PlasmaPro 80 reactive ion etcher
XeF2 etcher XeF2 etcher
Plasma cleaning / ashing
Tool Description
O2 Plasma Asher
Tegal Plasma Tegal 915 Plasma Strip
YES O2 Plasma YES Engineering O2 Plasma

Metrology

Tool Description
4-point Probe Signatone 4-point probe
Dektak Bruker DektakXT profilometer
Desktop SEM Phenom ProX G6 Desktop Scanning Electron Microscope
Ellipsometer Thin film thickness measurement
F20 Thin film thickness measurement
Keithley S530 Keithley (Tektronix) S530 Parametric tester

Oxidation

Tool Description
Oxide (lower)
Oxide (upper)

Packaging & Mechanical Tooling

Tool Description
Ball & Wedge bonder F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw DISCO Corp. DAD3350 Dicing Saw
Mini Polisher EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher
Scribe Tool LatticeAx 420 Cleaving System
Vacuum Sealer Gramatech GVS2600R Vacuum Sealer

Wet Process

Solvent fume hood (in Metrology bay)
Tool Description
Heated ultrasonic bath
Hot plate
Acid fume hood left-side (in Etch bay)
Tool Description
Acid fume hood right-side (in Etch bay)
Tool Description
Resist fume hood
Tool Description
Spinner 1 Laurell resist spinner (left side)
Spinner 2 Laurell resist spinner (right side)
Bake plate 1 Apogee bake plate
Bake plate 2 Apogee bake plate
Bake plate 3 Apogee bake plate
Bake plate 4 Apogee bake plate
Base and developer fume hood left-side (in Advanced Photo bay)
Tool Description
Base and developer fume hood right-side (in Advanced Photo bay)
Tool Description
EBL-use-only fume hood (in Photo bay)
Tool Description
Headway spinner left Headway resist spinner
Headway spinner right Headway resist spinner
Torrey Pines Hot Plate left
Torrey Pines Hot Plate right
Ultrasonic heated bath
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