Tool list: Difference between revisions
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* substrate rotation | * substrate rotation | ||
* source to substrate distance is approx. 15″ (381mm) | * source to substrate distance is approx. 15″ (381mm) | ||
|[[:File:KJL Metal SOP v1.pdf|SOP]] | | | ||
[[:File:KJL Ebeam.mp4|how-to video]] | * [[:File:KJL Metal SOP v1.pdf|SOP]] | ||
* [[:File:KJL Ebeam.mp4|how-to video]] | |||
|- | |- | ||
|[[Temescal Metal]] e-beam evaporator | |[[Temescal Metal]] e-beam evaporator | ||
| Line 164: | Line 165: | ||
|<8nm | |<8nm | ||
| | | | ||
* Model EBPG5150 | * Model: EBPG5150 | ||
* Thermal Field Emission 50kV and 100kV | * Thermal Field Emission 50kV and 100kV | ||
* Beam current 350nA | * Beam current 350nA | ||
| Line 178: | Line 179: | ||
|300nm | |300nm | ||
| | | | ||
* Model Heidelberg DWL 66+ (Direct Write Laser) | * Model: Heidelberg DWL 66+ (Direct Write Laser) | ||
* Front and backside alignment | * Front and backside alignment | ||
* Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists) | * Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists) | ||
| Line 258: | Line 259: | ||
|+Etchers | |+Etchers | ||
!Tool | !Tool | ||
! | !Location | ||
!Substrate | |||
size | |||
!Allowed | |||
materials | |||
!Disallowed | |||
materials | |||
!Gases | |||
!Table temperature | |||
!Features | |||
!Links | |||
|- | |- | ||
|[[Oxford DRIE]] | |[[Oxford DRIE]] | ||
|Oxford System 100 Deep reactive-ion etcher | [[File:DRIE.jpg|frameless|200x200px]] | ||
|Etch bay 1 | |||
|4" wafer clamp, smaller pieces may go onto carrier wafers | |||
2″, 3″, 4″, 6″, 8″ wafers possible | |||
|Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB | |||
|No exposed metals (except Cr) | |||
|Ar, O2, CF4, CHF3, SF6, C4F8 | |||
|20C | |||
| | |||
* Model: Oxford System 100 Deep reactive-ion etcher | |||
* ICP power (max) 3000W | |||
* Table RF power (max) 300W | |||
| | |||
* [[:File:DRIE SOP - August 2023.pdf|SOP]] | |||
* [[:File:DRIE Quick Start Guide - August 2023.pdf|Quickstart guide]] | |||
* [https://docs.google.com/spreadsheets/d/e/2PACX-1vRAOAaR5tTHyx3b0pJpRsf3p0oh_AjsmcLllQjLOq_5Uod0HPC2WB94mBHw6brxLaQqFUvY6Iu3jJ20/pubhtml?gid=0&single=true Recipes] | |||
|- | |- | ||
|[[Oxford DRIE-ALE]] | |[[Oxford DRIE-ALE]] | ||
|Etch bay 1 | |||
| | |||
| | |||
| | |||
| | |||
| | |||
|Oxford Deep reactive-ion etcher and atomic-layer etcher. | |Oxford Deep reactive-ion etcher and atomic-layer etcher. | ||
| | |||
|- | |- | ||
|[[Oxford III-V]] | |[[Oxford III-V]] | ||
|Oxford PlasmaPro 100 Cobra III-V etcher | [[File:III-V.jpg|frameless|200x200px]] | ||
|Etch bay 1 | |||
|4" wafer clamp, smaller pieces may go onto carrier wafers | |||
2″, 3″, 4″, 6″, 8″ wafers possible | |||
|InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene | |||
|No exposed metals (except Cr) | |||
No deep etching polymers (>1 µm) | |||
|Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4 | |||
| -120 to 200C | |||
| | |||
* Model: Oxford PlasmaPro 100 Cobra III-V etcher | |||
* Cryo cooling | |||
* Helium backside cooling | |||
* ICP power (max) 1500W | |||
* Table RF power (max) 1500W | |||
* Optical endpoint detection: Horiba Jobin Yvon LEM G50 | |||
| | |||
* [[:File:III V Etcher SOP - August 2023.pdf|SOP]] | |||
* [[:File:III V Quick Start Guide - August 2023.pdf|Quickstart guide]] | |||
|- | |- | ||
|[[Oxford RIE]] | |[[Oxford RIE]] | ||
|Oxford PlasmaPro 80 reactive ion etcher | [[File:RIE.jpg|frameless|200x200px]] | ||
|Etch bay 1 | |||
|Up to 200 mm wafers | |||
|Si, SiO2, Si3N4 | |||
|No exposed metals (except Cr) | |||
No deep etching polymers (>1 µm) | |||
|Ar, O2, CF4, CHF3, SF6 | |||
|20C | |||
| | |||
* Model: Oxford PlasmaPro 80 reactive ion etcher | |||
* Table RF power (max) 300W | |||
* Optical endpoint detection: Horiba Jobin Yvon LEM G50 | |||
| | |||
* [[:File:RIE 80 SOP - August 2023.pdf|SOP]] | |||
* [[:File:RIE 80 Quick Start Guide - August 2023.pdf|Quickstart guide]] | |||
|- | |- | ||
|[[XeF2 etcher]] | |[[XeF2 etcher]] | ||
|XeF2 | [[File:XeF2.jpg|frameless|200x200px]] | ||
|Deposition bay 1 | |||
|Up to 6" wafers | |||
|Si | |||
|None | |||
|N2, cylinder with crystal XeF2 | |||
|20C | |||
| | |||
* Custom built by the Armani group | |||
| | |||
* [[:File:XeF2 SOP - June 2023.pdf|SOP]] | |||
* [[:File:XeF2 Quick Start Guide - May 2023.pdf|Quickstart guide]] | |||
|} | |} | ||
{| class="wikitable" | {| class="wikitable" | ||
Revision as of 15:39, 7 May 2025
Annealing
| Tool | Description |
|---|---|
| RTA | Rapid Thermal Annealer |
Deposition
| Tool | Location | Substrate size (up to diameter) | Deposition films | Gases | Features | Links |
|---|---|---|---|---|---|---|
| Oxford PECVD | Deposition bay 1 | 6" wafer | SiO2, Si3N4, SiNO | 2% SiH4/N2, NH3, N2O, N2, He, CF4 |
|
SOP |
| Veeco ALD | Deposition bay 1 | 4" | MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2 | N2 as a carrier gas
O2 or O3 as film precursor |
|
SOP |
| Tool | Location | Substrate size
(up to diameter) |
# of pockets | E-beam voltage | Deposition materials | Gases | Features | Links |
|---|---|---|---|---|---|---|---|---|
| Angstrom Evaporator | Deposition bay 1 | 6" | 4 | 10kV | Ti, Al, Al2O3 | Ar, 5% O2 in Ar |
|
SOP |
| CHA Evaporator | Deposition bay 2 | 6" | 6 @ 15cc | 10kV | Ti, Au, Pt, Pd, Cr, Ni and Ag |
|
SOP | |
| KJL Evaporator | Deposition bay 1 | 6" | 4 | 5kV | Ti, Au, Pt, Pd, Cr, Ni and Ag |
|
||
| Temescal Metal e-beam evaporator | Not in service. | |||||||
| Substrate size | # of sources | Sputter power | ||||||
| KJL Sputter | Deposition bay 1 | 6" |
|
|
Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO | Ar, O2 |
|
SOP |
Lithography
| Tool | Location | Substrate size | Exposure
resolution |
Features | Links |
|---|---|---|---|---|---|
| Raith EBL | Ebeam Bay | 4" wafer, or small pieces up to 2" | <8nm |
|
SOP |
| Heidelberg DWL | Metrology Bay |
|
300nm |
|
SOP |
| Tool | Location | Substrate
size |
Mask
size |
Exposure
resolution |
Features | Links |
|---|---|---|---|---|---|---|
| Aligner A (MJB3) | Advanced Photo bay | Pieces up to 3” | 3” and 4” | 0.8um |
|
SOP |
| Aligner B (MJB3) | Photo bay | Pieces up to 3” | 3” and 4” | 0.8um |
|
SOP |
| Aligner C (MJB4) | Photo bay | Pieces up to 2" | 3", 4", and 5" | 0.8um |
|
SOP |
| Aligner D (MA BA6 Gen4) | Advanced Photo Bay | 0.8um |
|
SOP |
Dry Etching
See also: Dry etch equipment comparison.
| Tool | Location | Substrate
size |
Allowed
materials |
Disallowed
materials |
Gases | Table temperature | Features | Links |
|---|---|---|---|---|---|---|---|---|
| Oxford DRIE | Etch bay 1 | 4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible |
Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB | No exposed metals (except Cr) | Ar, O2, CF4, CHF3, SF6, C4F8 | 20C |
|
|
| Oxford DRIE-ALE | Etch bay 1 | Oxford Deep reactive-ion etcher and atomic-layer etcher. | ||||||
| Oxford III-V | Etch bay 1 | 4" wafer clamp, smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible |
InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene | No exposed metals (except Cr)
No deep etching polymers (>1 µm) |
Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4 | -120 to 200C |
|
|
| Oxford RIE | Etch bay 1 | Up to 200 mm wafers | Si, SiO2, Si3N4 | No exposed metals (except Cr)
No deep etching polymers (>1 µm) |
Ar, O2, CF4, CHF3, SF6 | 20C |
|
|
| XeF2 etcher | Deposition bay 1 | Up to 6" wafers | Si | None | N2, cylinder with crystal XeF2 | 20C |
|
| Tool | Description |
|---|---|
| O2 Plasma Asher | |
| Tegal Plasma | Tegal 915 Plasma Strip |
| YES O2 Plasma | YES Engineering O2 Plasma |
Metrology
| Tool | Description |
|---|---|
| 4-point Probe | Signatone 4-point probe |
| Dektak | Bruker DektakXT profilometer |
| Desktop SEM | Phenom ProX G6 Desktop Scanning Electron Microscope |
| Ellipsometer | Thin film thickness measurement |
| F20 | Thin film thickness measurement |
| Keithley S530 | Keithley (Tektronix) S530 Parametric tester |
Oxidation
| Tool | Description |
|---|---|
| Oxide (lower) | |
| Oxide (upper) |
Packaging & Mechanical Tooling
| Tool | Description |
|---|---|
| Ball & Wedge bonder | F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder |
| Dicing Saw | DISCO Corp. DAD3350 Dicing Saw |
| Mini Polisher | EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher |
| Scribe Tool | LatticeAx 420 Cleaving System |
| Vacuum Sealer | Gramatech GVS2600R Vacuum Sealer |
Wet Process
| Tool | Description |
|---|---|
| Heated ultrasonic bath | |
| Hot plate |
| Tool | Description |
|---|---|
| Tool | Description |
|---|---|
| Tool | Description |
|---|---|
| Spinner 1 | Laurell resist spinner (left side) |
| Spinner 2 | Laurell resist spinner (right side) |
| Bake plate 1 | Apogee bake plate |
| Bake plate 2 | Apogee bake plate |
| Bake plate 3 | Apogee bake plate |
| Bake plate 4 | Apogee bake plate |
| Tool | Description |
|---|---|
| Tool | Description |
|---|---|
| Tool | Description |
|---|---|
| Headway spinner left | Headway resist spinner |
| Headway spinner right | Headway resist spinner |
| Torrey Pines Hot Plate left | |
| Torrey Pines Hot Plate right | |
| Ultrasonic heated bath |