Annealing
| Tool
|
Description
|
| RTA
|
Rapid Thermal Annealer
|
Deposition
CVD (chemical vapor deposition)
| Tool
|
Location
|
Substrate size (up to diameter)
|
Deposition films
|
Gases
|
Features
|
Links
|
| Oxford PECVD
|
Deposition bay 1
|
6" wafer
|
SiO2, Si3N4, SiNO
|
2% SiH4/N2, NH3, N2O, N2, He, CF4
|
- PlasmaPro System 100
- Electrode specs: 240mm diameter, up to 400°C
- Load lock
- No wafer clamping, fixed height
- RF power 300W
- LF power 500W
|
SOP
|
| Veeco ALD
|
Deposition bay 1
|
4"
|
MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2
|
N2 as a carrier gas
O2 or O3 as film precursor
|
- Savannah S200
- Reactor temperature: 150°C for most recipes, up to 270°C
- Ozone generator can replace O2 with O3
|
SOP
|
PVD (physical vapor deposition)
| Tool
|
Location
|
Substrate size
(up to diameter)
|
# of pockets
|
E-beam voltage
|
Deposition materials
|
Gases
|
Features
|
Links
|
| Angstrom Evaporator
|
Deposition bay 1
|
6"
|
4
|
10kV
|
Ti, Al, Al2O3
|
Ar, 5% O2 in Ar
|
- variable angle stage
- substrate rotation
- substrate heater
- ion mill for substrate cleaning
- load lock
|
SOP
|
| CHA Evaporator
|
Deposition bay 2
|
6"
|
6 @ 15cc
|
10kV
|
Ti, Au, Pt, Pd, Cr, Ni and Ag
|
|
- Sweep controller
- motor-driven deposition shield
- 8kW heater array
- Lift-off fixturing
- substrate rotation
- substrate dome for twenty-two 100mm back loaded wafers
- Inficon IC/6 for thickness control
|
SOP
|
| KJL Evaporator
|
Deposition bay 1
|
6"
|
4
|
5kV
|
Ti, Au, Pt, Pd, Cr, Ni and Ag
|
|
- substrate rotation
- source to substrate distance is approx. 15″ (381mm)
|
SOP,
how-to video
|
| Temescal Metal e-beam evaporator
|
|
|
|
|
|
|
Not in service.
|
|
|
|
|
Substrate size
|
# of sources
|
Sputter power
|
|
|
|
|
| KJL Sputter
|
Deposition bay 1
|
6"
|
|
- DC sputter power 500 W
- RF sputter power 300 W
|
Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO
|
Ar, O2
|
- Target size: 2"
- Substrate rotation
|
SOP
|
Lithography
E-beam and laser
| Tool
|
Location
|
Substrate size
|
Exposure
resolution
|
Features
|
Links
|
| Raith EBL
|
Ebeam Bay
|
4" wafer, or small pieces up to 2"
|
<8nm
|
- Model EBPG5150
- Thermal Field Emission 50kV and 100kV
- Beam current 350nA
- Pattern Generator 125 MHZ Genlsys – Beamer
|
SOP
|
| Heidelberg DWL
|
Metrology Bay
|
- Min substrate/mask size 5x5mm
- Max substrate/mask size 9"x9"
|
300nm
|
- Model Heidelberg DWL 66+ (Direct Write Laser)
- Front and backside alignment
- Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists)
- Write modes (trading off high speed and high resolution)
- High resolution (min feature size 0.3um)
- Mode IV: min size 2um
- Mode V: min size 4um
- Alignment modes: Manual, semi-automatic, and fully automatic alignment
|
SOP
|
UV mask aligners
| Tool
|
Location
|
Substrate
size
|
Mask
size
|
Exposure
resolution
|
Features
|
Links
|
| Aligner A (MJB3)
|
Advanced Photo bay
|
Pieces up to 3”
|
3” and 4”
|
0.8um
|
- Backside alignment
- Exposure modes Soft, Hard, and vacuum contacts
- Exposure wavelength UV 400, 350-450 nm
- Exposure source 350 W Hg Arc lamp
|
SOP
|
| Aligner B (MJB3)
|
Photo bay
|
Pieces up to 3”
|
3” and 4”
|
0.8um
|
- Exposure modes Soft, Hard, and vacuum contacts
- Exposure wavelength UV 400, 350-450 nm
- Exposure source 350 W Hg Arc lamp
|
SOP
|
| Aligner C (MJB4)
|
Photo bay
|
Pieces up to 2"
|
3", 4", and 5"
|
0.8um
|
- Exposure wavelength UV 400, 350 – 450nm
- Eyepieces 10x, objectives 5x, 10x, 20x
|
SOP
|
| Aligner D (MA BA6 Gen4)
|
Advanced Photo Bay
|
|
|
0.8um
|
- Backside alignment
- Exposure wavelength UV400 350 – 450 nm
- Exposure source 450W LED
- Digital camera objectives 5x, 10x
|
SOP
|
Dry Etching
See also: Dry etch equipment comparison.
Metrology
| Tool
|
Description
|
| 4-point Probe
|
Signatone 4-point probe
|
| Dektak
|
Bruker DektakXT profilometer
|
| Desktop SEM
|
Phenom ProX G6 Desktop Scanning Electron Microscope
|
| Ellipsometer
|
Thin film thickness measurement
|
| F20
|
Thin film thickness measurement
|
| Keithley S530
|
Keithley (Tektronix) S530 Parametric tester
|
Oxidation
Wet Process
Solvent fume hood (in Metrology bay)
| Tool
|
Description
|
| Heated ultrasonic bath
|
|
| Hot plate
|
|
Acid fume hood left-side (in Etch bay)
| Tool
|
Description
|
|
|
|
Acid fume hood right-side (in Etch bay)
| Tool
|
Description
|
|
|
|
Resist fume hood
| Tool
|
Description
|
| Spinner 1
|
Laurell resist spinner (left side)
|
| Spinner 2
|
Laurell resist spinner (right side)
|
| Bake plate 1
|
Apogee bake plate
|
| Bake plate 2
|
Apogee bake plate
|
| Bake plate 3
|
Apogee bake plate
|
| Bake plate 4
|
Apogee bake plate
|
Base and developer fume hood left-side (in Advanced Photo bay)
| Tool
|
Description
|
|
|
|
Base and developer fume hood right-side (in Advanced Photo bay)
| Tool
|
Description
|
|
|
|
EBL-use-only fume hood (in Photo bay)
| Tool
|
Description
|
| Headway spinner left
|
Headway resist spinner
|
| Headway spinner right
|
Headway resist spinner
|
| Torrey Pines Hot Plate left
|
|
| Torrey Pines Hot Plate right
|
|
| Ultrasonic heated bath
|
|