Annealing
| Tool
|
Description
|
| RTA
|
Rapid Thermal Annealer
|
Deposition
CVD (chemical vapor deposition)
| Tool
|
Description
|
| Veeco ALD
|
Atomic Layer Deposition
|
| Oxford PECVD
|
Plasma-enhanced chemical vapor deposition
|
Lithography
E-beam lithography
| Tool
|
Description
|
| Raith EBL
|
Raith e-beam lithography EBPG5150
|
Laser writing
| Tool
|
Description
|
| Heidelberg DWL
|
Heidelberg DWL 66+ (Direct Write Laser)
|
Dry Etching
Dry etch equipment comparison
|
|
Oxford III-V
|
Oxford RIE
|
Oxford DRIE
|
XeF2 etcher
|
YES O2 Plasma
|
| Model
|
Oxford PlasmaPro 100 Cobra 180
|
Oxford PlasmaPro 80 RIE
|
Oxford System 100 Phoenix GP
|
Custom-built
|
CV200RFS(E)
|
| Use case
|
Etching III-V materials
|
Etching dielectrics
|
Etching deep Si with Bosch process
|
Etching Si quickly and isotropically with high selectivity
|
Descum, photoresist stripping, or organic material removal
|
| Allowed materials
|
InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene
|
SiO2, SiN, HfO2
|
Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB
|
Si
|
Photoresist, graphene, CNT
|
| Material restrictions
|
No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|
No exposed metals (except Cr)
No deep etching polymers (>1 µm)
|
No exposed metals (except Cr)
|
None
|
None
|
| Load lock
|
Yes
|
|
Yes
|
|
|
| Substrate size
|
4" wafer clamp
Smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|
Up to 200 mm wafers
|
4" wafer clamp
Smaller pieces may go onto carrier wafers
2″, 3″, 4″, 6″, 8″ wafers possible
|
Up to 100 mm wafers
|
Up to 200 mm wafers
|
| Ar
|
Yes
|
Yes
|
Yes
|
|
|
| O2
|
Yes
|
Yes
|
Yes
|
|
Yes
|
| CF4
|
|
Yes
|
Yes
|
|
|
| CHF3
|
|
Yes
|
Yes
|
|
|
| SF6
|
Yes
|
Yes
|
Yes
|
|
|
| C4F8
|
|
|
Yes
|
|
|
| CH4
|
Yes
|
|
|
|
|
| H2
|
Yes
|
|
|
|
|
| Cl2
|
Yes
|
|
|
|
|
| BCl3
|
Yes
|
|
|
|
|
| SiCl4
|
Yes
|
|
|
|
|
| XeF2
|
|
|
|
Yes
|
|
| Table RF power (max)
|
300W
|
300W
|
600W
|
|
1000W
|
| ICP power (max)
|
1500W
|
|
3000W
|
|
|
| He backside cooling
|
Yes
|
|
Yes
|
|
|
| Table temperature
|
-120 to 200C
|
20C
|
20C
|
20C
|
Ambient - 250C
|
| Endpoint detection
|
Horiba Jobin Yvon
LEM G50
|
Horiba Jobin Yvon
LEM G50
|
|
|
|
Metrology
| Tool
|
Description
|
| 4-point Probe
|
Signatone 4-point probe
|
| Dektak
|
Bruker DektakXT profilometer
|
| Desktop SEM
|
Phenom ProX G6 Desktop Scanning Electron Microscope
|
Oxidation
Testers
| Tool
|
Description
|
| Keithley S530
|
Keithley (Tektronix) S530 Parametric tester
|
Wet Process
Solvent fume hood (in Metrology bay)
| Tool
|
Description
|
| Heated ultrasonic bath
|
|
| Hot plate
|
|
Acid fume hood left-side (in Etch bay)
| Tool
|
Description
|
|
|
|
Acid fume hood right-side (in Etch bay)
| Tool
|
Description
|
|
|
|
Resist fume hood
| Tool
|
Description
|
| Spinner 1
|
Laurell resist spinner (left side)
|
| Spinner 2
|
Laurell resist spinner (right side)
|
| Bake plate 1
|
Apogee bake plate
|
| Bake plate 2
|
Apogee bake plate
|
| Bake plate 3
|
Apogee bake plate
|
| Bake plate 4
|
Apogee bake plate
|
Base and developer fume hood left-side (in Advanced Photo bay)
| Tool
|
Description
|
|
|
|
Base and developer fume hood right-side (in Advanced Photo bay)
| Tool
|
Description
|
|
|
|
EBL-use-only fume hood (in Photo bay)
| Tool
|
Description
|
| Headway spinner left
|
Headway resist spinner
|
| Headway spinner right
|
Headway resist spinner
|
| Torrey Pines Hot Plate left
|
|
| Torrey Pines Hot Plate right
|
|
| Ultrasonic heated bath
|
|