Tool list

Annealing

Tool	Description
RTA	Rapid Thermal Annealer

Deposition

CVD (chemical vapor deposition)

Tool	Location	Substrate size (up to diameter)	Deposition films	Gases	Features	Links
Oxford PECVD	Deposition bay 1	6" wafer	SiO2, Si3N4, SiNO	2% SiH4/N2, NH3, N2O, N2, He, CF4	PlasmaPro System 100 Electrode specs: 240mm diameter, up to 400°C Load lock No wafer clamping, fixed height RF power 300W LF power 500W	SOP
Veeco ALD	Deposition bay 1	4"	MgO, Al2O3, Pt, Ru, HfO2, ZrO2, TiO2	N2 as a carrier gas O2 or O3 as film precursor	Savannah S200 Reactor temperature: 150°C for most recipes, up to 270°C Ozone generator can replace O2 with O3	SOP

PVD (physical vapor deposition)

Tool	Location	Substrate size (up to diameter)	# of pockets	E-beam voltage	Deposition materials	Gases	Features	Links
Angstrom Evaporator	Deposition bay 1	6"	4	10kV	Ti, Al, Al2O3	Ar, 5% O2 in Ar	variable angle stage substrate rotation substrate heater ion mill for substrate cleaning load lock	SOP
CHA Evaporator	Deposition bay 2	6"	6 @ 15cc	10kV	Ti, Au, Pt, Pd, Cr, Ni and Ag		Sweep controller motor-driven deposition shield 8kW heater array Lift-off fixturing substrate rotation substrate dome for twenty-two 100mm back loaded wafers Inficon IC/6 for thickness control	SOP
KJL Evaporator	Deposition bay 1	6"	4	5kV	Ti, Au, Pt, Pd, Cr, Ni and Ag		substrate rotation source to substrate distance is approx. 15″ (381mm)	SOP how-to video
Temescal Metal e-beam evaporator							Not in service.
		Substrate size	# of sources	Sputter power
KJL Sputter	Deposition bay 1	6"	4 DC 1 RF/DC	DC sputter power 500 W RF sputter power 300 W	Au, Pt, Ti, Al, W, Mo, Cu, SiO2, Al2O3, ITO	Ar, O2	Target size: 2" Substrate rotation	SOP

Lithography

E-beam and laser

Tool	Location	Substrate size	Exposure resolution	Features	Links
Raith EBL	Ebeam Bay	4" wafer, or small pieces up to 2"	<8nm	Model: EBPG5150 Thermal Field Emission 50kV and 100kV Beam current 350nA Pattern Generator 125 MHZ Genlsys – Beamer	SOP
Heidelberg DWL	Metrology Bay	Min substrate/mask size 5x5mm Max substrate/mask size 9"x9"	300nm	Model: Heidelberg DWL 66+ (Direct Write Laser) Front and backside alignment Exposure wavelength: Grayscale and advanced grayscale exposure 405nm laser (“h-line” photoresists) Write modes (trading off high speed and high resolution) High resolution (min feature size 0.3um) Mode IV: min size 2um Mode V: min size 4um Alignment modes: Manual, semi-automatic, and fully automatic alignment	SOP

UV mask aligners

Tool	Location	Substrate size	Mask size	Exposure resolution	Features	Links
Aligner A (MJB3)	Advanced Photo bay	Pieces up to 3”	3” and 4”	0.8um	Backside alignment Exposure modes Soft, Hard, and vacuum contacts Exposure wavelength UV 400, 350-450 nm Exposure source 350 W Hg Arc lamp	SOP
Aligner B (MJB3)	Photo bay	Pieces up to 3”	3” and 4”	0.8um	Exposure modes Soft, Hard, and vacuum contacts Exposure wavelength UV 400, 350-450 nm Exposure source 350 W Hg Arc lamp	SOP
Aligner C (MJB4)	Photo bay	Pieces up to 2"	3", 4", and 5"	0.8um	Exposure wavelength UV 400, 350 – 450nm Eyepieces 10x, objectives 5x, 10x, 20x	SOP
Aligner D (MA BA6 Gen4)	Advanced Photo Bay			0.8um	Backside alignment Exposure wavelength UV400 350 – 450 nm Exposure source 450W LED Digital camera objectives 5x, 10x	SOP

Dry Etching

Etchers

Tool	Location	Substrate size	Allowed materials	Disallowed materials	Gases	Table temperature	Features	Links
Oxford DRIE	Etch bay 1	4" wafer clamp, smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible	Si, SiO2, SiN, Parylene, polyimide, LiNbO3, BCB	No exposed metals (except Cr)	Ar, O2, CF4, CHF3, SF6, C4F8	20C	Model: Oxford System 100 Deep reactive-ion etcher Etch deep Si with Bosch process ICP power (max) 3000W Table RF power (max) 300W	SOP Quickstart guide Recipes
Oxford DRIE-ALE	Etch bay 1						Oxford Deep reactive-ion etcher and atomic-layer etcher.
Oxford III-V	Etch bay 1	4" wafer clamp, smaller pieces may go onto carrier wafers 2″, 3″, 4″, 6″, 8″ wafers possible	InP, InAs, GaN, AlGaAs, InGaAsP, ITO, Si, SiC, MoS2, WSe, Graphene	No exposed metals (except Cr) No deep etching polymers (>1 µm)	Ar, O2, SF6, CH4, H2, Cl2, BCl3, SiCl4	-120 to 200C	Model: Oxford PlasmaPro 100 Cobra III-V etcher Etch III-V materials Cryo cooling Helium backside cooling ICP power (max) 1500W Table RF power (max) 1500W Optical endpoint detection: Horiba Jobin Yvon LEM G50	SOP Quickstart guide
Oxford RIE	Etch bay 1	Up to 200 mm wafers	Si, SiO2, Si3N4	No exposed metals (except Cr) No deep etching polymers (>1 µm)	Ar, O2, CF4, CHF3, SF6	20C	Model: Oxford PlasmaPro 80 reactive ion etcher Etch dielectrics Table RF power (max) 300W Optical endpoint detection: Horiba Jobin Yvon LEM G50	SOP Quickstart guide
XeF2 etcher	Deposition bay 1	Up to 6" wafers	Si	None	Crystal XeF2 source	20C	Etch Si quickly and isotropically with high selectivity Custom built by the Armani group	SOP Quickstart guide

Plasma cleaning / ashing

Tool	Location	Substrate size	Allowed materials	Gases	Features
O2 Plasma Asher	Advanced Photo Bay	Up to 200 mm wafers	Photoresist, graphene, CNT	O2	Model: CV200RFS(E) Descum, photoresist stripping, or organic material removal 1000W table RF power Heat up to 250C
Tegal Plasma	Advanced Photo Bay				Tegal 915 Plasma Strip
YES O2 Plasma	Advanced Photo Bay				YES Engineering O2 Plasma

Metrology

Assorted metrology

Tool	Location	Features	Links
4-point Probe	Metrology bay	Signatone 4-point probe
Dektak profilometer	Metrology bay	Model: Bruker DektakXT profilometer Scan Length Range 55mm (2in) 150mm (6in) with scan stitching capability Data Points Per Scan 120,000 maximum Max. Sample Thickness 50mm (1.95in) Step Height Repeatability <5Å, 1sigma on 0.1μm step Vertical Range 1mm (0.039in.) Vertical Resolution 1Å max. (@ 6.55μm range)10 Å @ 65.5 μm; 80 Å @ 524μm; 150 Å @ 1mm 3D capability	SOP
Ellipsometer	Photo bay	Thin film thickness measurement Laser wavelengths 4050, 6328, 8300 Angstroms Wafer mapping Yes	SOP
F20	Photo bay	Thin film thickness measurement
Keithley S530	Deposition bay 2	Keithley (Tektronix) S530 Parametric tester

Microscopes

Tool
Desktop SEM		Phenom ProX G6 Desktop Scanning Electron Microscope

Oxidation

Tool	Description
Oxide (lower)
Oxide (upper)

Packaging & Mechanical Tooling

Tool	Location	Substrate size	Description	Links
Ball & Wedge bonder	Etch bay 2		F&S Bondtec 53BDA Deep-access & Ball-Wedge bonder
Dicing Saw	Common chase		DISCO Corp. DAD3350 Dicing Saw
Mini Polisher	Common chase	up to 1" diameter	EQ Unipol-300 Mini (3") Automatic Grinder/ Polisher	SOP Manufacturer info
Scribe Tool	Photo bay		LatticeAx 420 Cleaving System
Vacuum Sealer	Advanced photo bay		Gramatech GVS2600R Vacuum Sealer

Wet Process

Solvent fume hood (in Metrology bay)

Tool	Description
Heated ultrasonic bath
Hot plate

Acid fume hood left-side (in Etch bay)

Tool	Description

Acid fume hood right-side (in Etch bay)

Tool	Description

Resist fume hood

Tool	Description
Spinner 1	Laurell resist spinner (left side)
Spinner 2	Laurell resist spinner (right side)
Bake plate 1	Apogee bake plate
Bake plate 2	Apogee bake plate
Bake plate 3	Apogee bake plate
Bake plate 4	Apogee bake plate

Base and developer fume hood left-side (in Advanced Photo bay)

Tool	Description

Base and developer fume hood right-side (in Advanced Photo bay)

Tool	Description

EBL-use-only fume hood (in Photo bay)

Tool	Description
Headway spinner left	Headway resist spinner
Headway spinner right	Headway resist spinner
Torrey Pines Hot Plate left
Torrey Pines Hot Plate right
Ultrasonic heated bath